Page 1
74V1G0 4
SINGLE INVERTER
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 1µA(MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ POWER DOWN PROTECTION ON INPUT
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 8mA (MIN) at VCC = 4.5V
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 5.5V
CC
■ IMPROVED LATCH-UP IMMUNITY
= 28% VCC (MIN.)
NIL
PHL
= 3.8ns (TYP.) at VCC = 5V
PD
DESCRIPTION
The 74V1G04 is an advanced high-speed CMOS
SINGLE INVERTER fabricated with sub-micron
silicon gate and double-layer metal wiring C2MOS
technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high no ise
immunity and stable output.
SOT323-5LSOT23-5L
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1G04STR
SOT323-5L 74V1G04CTR
Power down protection is provided on inpu t an d 0
to 7V can be acce pted on inp ut with no rega rd to
the supply voltage. This device can be used to
interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/9July 2001
Page 2
74V1G04
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1 NC Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5
V
CC
TRUTH TABLE
AY
LH
HL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
Positive Supply Voltage
-0.5 to +7.0 V
-0.5 to +7.0 V
V
- 20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
260 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 30 % to 70% of V
2/9
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
(V
CC
= 3.3 ± 0.3V)
CC
= 5.0 ± 0.5V)
CC
2 to 5.5 V
0 to 5.5 V
CC
-55 to 125 °C
0 to 100
0 to 20
V
ns/V
ns/V
Page 3
DC SPECIFICATIONS
Symbol P arameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
Quiescent Supply
CC
Current
Test Condition Value
V
(V)
CC
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.0 1.5 1.5 1.5
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
2.0 0.5 0.5 0.5
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
=-50 µA
I
O
I
=-50 µA
O
I
=-50 µA
O
I
=-4 mA
O
I
=-8 mA
O
IO=50 µA
I
=50 µA
O
I
=50 µA
O
I
=4 mA
O
I
=8 mA
O
V
= 5.5V or GND
I
= VCC or GND
V
I
1.9 2.0 1.9 1.9
2.9 3.0 2.9 2.9
4.4 4.5 4.4 4.4
2.58 2.48 2.4
3.94 3.8 3.7
0.3V
CC
0.3V
CC
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.36 0.44 0.55
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
11020µA
74V1G04
Unit
0.3V
CC
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
= tf = 3ns)
r
Test Condition Value
= 25°C
Symbol Parameter
t
PLH tPHL
(*) Vol tage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ±
Propagation Delay
Time
0.5V
V
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
15 5.0 7.0 1.0 8.5 1.0 9.5
(*)
50 6.1 9.0 1.0 10.5 1.0 11.5
(**)
15 3.8 5.5 1.0 6.5 1.0 7.5
(**)
50 4.7 7.5 1.0 8.5 1.0 9.5
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns
CAPACITIVE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
4101010pF
10 pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circui t ). Average ope rating curre nt can be obtained by the follow i ng equation. I
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + I
CC(opr)
CC
Unit
3/9
Page 4
74V1G04
TEST CIRCUIT
CL =15/50pF or equivalent (includes jig an d probe capaci ta nce)
R
= Z
of pulse generator (typically 50Ω)
T
OUT
WAVEFORM: PROPAGATION DELAY (f=1MHz; 5 0% duty cycle)
4/9
Page 5
74V1G04
SOT23-5L MECHANICAL DATA
mm. mils
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.35 0.50 13.7 19.7
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
e0.95 37.4
e1 1.9 74.8
L 0.35 0.55 13.7 21.6
5/9
Page 6
74V1G04
SOT323-5L MECHANICAL DATA
mm. mils
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 0.80 1.10 31.5 43.3
A1 0.00 0.10 0.0 3.9
A2 0.80 1.00 31.5 39.4
b 0.15 0.30 5.9 11.8
C 0.10 0.18 3.9 7.1
D 1.80 2.20 70.9 86.6
E 1.80 2.40 70.9 94.5
E1 1.15 1.35 45.3 53.1
e0.65 25.6
e1 1.3 51.2
L 0.10 0.30 3.9 11.8
6/9
Page 7
Tape & Reel SOT23-xL MECHANICAL DATA
74V1G04
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362
T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161
P 3.9 4.0 4.1 0.153 0.157 0.161
mm. inch
7/9
Page 8
74V1G04
Tape & Reel SOT323-xL MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 175 180 185 6.889 7.086 7.283
C 12.8 13 13.2 0.504 0.512 0.519
D 20.2 0.795
N 59.5 60 60.5 2.362
T 14.4 0.567
Ao 2.25 0.088
Bo 2.7 0.106
Ko 1.2 0.047
Po 3.98 4 4.2 0.156 0.157 0.165
P 3.98 4 4.2 0.156 0.157 0.165
mm. inch
8/9
Page 9
74V1G04
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No li cense is granted by implica tion or otherwise under any patent or patent righ ts of S TMic roelec tronics. Specifications
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.
Australi a - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malay sia - Malta - Morocco
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STM icroelectronics - Prin ted in Italy - All Rights Reserved
STMicr o el ectronics GROU P OF COMPANIE S
Singapo re - Spain - Swe den - Switzerl and - United K i ngdom
© http://www.st.com
9/9
Loading...