
1/9July 2001
■ HIGH SPEED: t
PD
= 3.9ns (TYP.) at VCC = 5V
■ LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at TA=25°C
■ HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% VCC (MIN.)
■ POWER DOWN PROTECTION ON INPUTS
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G03 is an advanced high-speed CMOS
SINGLE 2-INPUT OPEN DRAIN NAND GATE
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high no ise
immunity and stable output.
The device can, with an external pull-up resistor,
be used in wired AND configuration. This d evice
can also be used as a led driver in any other
application requiring current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
74V1G03
SINGLE 2-INPUT OPEN DRAIN NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1G03STR
SOT323-5L 74V1G03CTR
SOT323-5LSOT23-5L

74V1G03
2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
Z: High Impedance
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) VIN from 30 % to 70% of V
CC
PIN No SYMBOL NAME AND FUNCTION
1 1A Data Input
2 1B Data Input
4 1Y Data Output
3 GND Ground (0V)
5
V
CC
Positive Supply Voltage
ABY
LLZ
LHZ
HLZ
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to VCC + 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC VCC or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
2 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 3.3 ± 0.3V)
(V
CC
= 5.0 ± 0.5V)
0 to 100
0 to 20
ns/V
ns/V

74V1G03
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS
(*) Vol tage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ±
0.5V
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.0 1.5 1.5 1.5
V
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0 0.5 0.5 0.5
V
3.0 to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
V
OL
Low Level Output
Voltage
2.0
I
O
=50 µA
0.0 0.1 0.1 0.1
V
3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
4.5
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
4.5
I
O
=8 mA
0.36 0.44 0.55
I
OZ
High Impedance
Output Leakage
Current
5.5
V
I
= VIH or V
IL
VO = VCC or GND
±
0.25
± 2.5 ± 5 µA
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
5.5
V
I
= VCC or GND
11020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PZL
Propagation Delay
Time
3.3
(*)
15 4.8 6.5 1.0 8.0 1.0 9.0
ns
3.3
(*)
50 5.3 7.5 1.0 9.0 1.0 10.0
5.0
(**)
15 3.9 5.5 1.0 6.5 1.0 7.5
5.0
(**)
50 4.3 6.0 1.0 7.5 1.0 8.5
t
PLZ
Propagation Delay
Time
3.3
(*)
50 6.8 9.5 1.0 10.0 1.0 11.0
ns
5.0
(**)
50 4.8 6.5 1.0 7.0 1.0 8.0

74V1G03
4/9
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circui t ). Average ope rating curre nt can be obtained by the follow i ng equation. I
CC(opr)
= CPD x VCC x fIN + I
CC
TEST CIRCUIT
CL = 15/50pF or e qui valent (inc lu des jig and probe capacitance)
R
1
= 1KΩ or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
4101010pF
C
OUT
Output
Capacitance
5101010pF
C
PD
Power Dissipation
Capacitance
(note 1)
3pF

74V1G03
5/9
DIM.
mm. mils
MIN. TYP MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.35 0.50 13.7 19.7
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
e0.95 37.4
e1 1.9 74.8
L 0.35 0.55 13.7 21.6
SOT23-5L MECHANICAL DATA

74V1G03
6/9
DIM.
mm. mils
MIN. TYP MAX. MIN. TYP. MAX.
A 0.80 1.10 31.5 43.3
A1 0.00 0.10 0.0 3.9
A2 0.80 1.00 31.5 39.4
b 0.15 0.30 5.9 11.8
C 0.10 0.18 3.9 7.1
D 1.80 2.20 70.9 86.6
E 1.80 2.40 70.9 94.5
E1 1.15 1.35 45.3 53.1
e0.65 25.6
e1 1.3 51.2
L 0.10 0.30 3.9 11.8
SOT323-5L MECHANICAL DATA

74V1G03
7/9
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362
T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161
P 3.9 4.0 4.1 0.153 0.157 0.161
Tape & Reel SOT23-xL MECHANICAL DATA

74V1G03
8/9
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 175 180 185 6.889 7.086 7.283
C 12.8 13 13.2 0.504 0.512 0.519
D 20.2 0.795
N 59.5 60 60.5 2.362
T 14.4 0.567
Ao 2.25 0.088
Bo 2.7 0.106
Ko 1.2 0.047
Po 3.98 4 4.2 0.156 0.157 0.165
P 3.98 4 4.2 0.156 0.157 0.165
Tape & Reel SOT323-xL MECHANICAL DATA

74V1G03
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No li cense is granted by implica tion or otherwise under any patent or patent righ ts of S TMic roelec tronics. Specifications
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STM icroelectronics - Prin ted in Italy - All Rights Reserved
STMicr o el ectronics GROU P OF COMPANIE S
Australi a - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malay sia - Malta - Morocco
Singapo re - Spain - Swe den - Switzerl and - United K i ngdom
© http://www.st.com
9/9