Page 1
SINGLE 2-INPUT OPEN DRAIN NAND GATE
■ HIGHSPEED:t
■
LOW POWER DISSIPATION:
I
=1 µA (MAX.)at TA=25oC
CC
■
HIGHNOISEIMMUNITY:
V
NIH=VNIL
■ POWERDOWNPROTECTIONON INPUTS
■
OPERATINGVOLTAGERANGE:
V
CC
■ IMPROVEDLATCH-UPIMMUNITY
=28%VCC(MIN.)
(OPR)= 2Vto5.5V
=3.7ns(TYP.)atVCC=5V
PD
74V1G03
PRELIMINARY DATA
S
(SOT23-5L)
ORDERCODE:
74V1G03S 74V1G03C
C
(SC-70)
DESCRIPTION
The 74V1G03 is an advanced high-speed CMOS
SINGLE 2-INPUT OPEN DRAIN NAND GATE
fabricated with sub-micron silicon gate and
double-layermetal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunityand stableoutput.
PIN CONNECTION AND IEC LOGICSYMBOLS
This device can, with an external pull-up resistor,
be used in wired AND configuration. This device
can also be used as a led driver in any other
applicationrequiring a currentsink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
September 1999
1/7
Page 2
74V1G03
INPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYMB OL NAME AND F U NCTIO N
1 1A Data Input
2 1B Data Input
4 1Y Data Output
3 GND Ground (0V)
5V
CC
Positive Supply Voltage
TRUTH TABLE
ABY
LLZ
LHZ
HLZ
HHL
Z:HighImpedance
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamageto thedevicemayoccur.Functionaloperation underthesecondition isnotimplied.
Supply Voltage -0.5 to +7.0 V
CC
DC Input Voltage -0.5 to +7.0 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current - 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current 25 mA
O
DC VCCor Ground Current ± 50 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 260
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
T
dt/dv
1)VINfrom30%to70%of V
2/7
Supply Voltage 2.0 to 5.5 V
CC
Input Voltage 0 to 5.5 V
I
Output Voltage 0 to V
O
Operating Temperature -40 to +85
op
(V
CC
CC
=3.3±0.3V)
=5.0±0.5V)
Input Rise and Fall Time (see note 1) (V
CC
CC
0 to 100
0to20
V
o
C
ns/V
ns/V
Page 3
74V1G03
DC SPECIFICATIONS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
T
V
CC
(V)
High Level Input
V
IH
Voltage
V
Low Level Input
IL
Voltage
V
Low Level Output
OL
Voltage
2.0 1.5 1.5
3.0 to 5.5 0.7V
2.0 0.5 0.5
3.0 to 5.5 0.3V
2.0 IO=50 µ A 0.0 0.1 0.1
3.0 I
4.5 I
3.0 I
4.5 I
High Impedance
I
OZ
Output Leakage
5.5
VO=VCCor GND
Current
Input Leakage Current 0 to 5.5 VI= 5.5V or GND
I
I
Quiescent Supply
I
CC
5.5 VI=VCCorGND 2 20
Current
Min. Typ. Max. Min. Max.
=50µA 0.0 0.1 0.1
O
=50µA 0.0 0.1 0.1
O
=4 mA 0.36 0.44
O
=8 mA 0.36 0.44
O
VI=VIHor V
IL
=25oC -40 to 85oC
A
CC
0.7V
CC
±0.25 ±2.5 µA
0.1
±
CC
0.3V
±
1.0
CC
µ
µ
V
V
V
A
A
AC ELECTRICAL CHARACTERISTICS (Inputtr=tf=3ns)
Symbol Parameter T est Condition Value Unit
t
Propagation Delay
PZL
Time
t
Propagation Delay
PLZ
Time
(*) Voltagerange is3.3V± 0.3V
(**) Voltagerangeis 5V± 0.5V
V
(V)
3.3
3.3
5.0
5.0
3.3
5.0
CC
(**)
(**)
(**)
C
L
(pF)
(*)
(*)
15 RL=1KΩ 5.5 7.9 1.0 9.5
50 RL=1KΩ 8.0 11.4 1.0 13.0
15 RL=1K
Ω
T
=25oC -40 to 85oC
A
Mi n . Typ. Max. M in. Max.
3.7 5.5 1.0 6.5
ns
50 RL=1KΩ 5.2 7.5 1.0 8.5
(*)
50 RL=1K
Ω
9.0 11.4 1.0 13.0
50 RL=1KΩ 6.0 7.5 1.0 8.5
ns
CAPACITIVE CHARACTERISTICS
Symb o l Para met er Test Co n diti o ns Val u e Uni t
=25oC -40 to 85oC
T
A
Min. Typ. Max. Min. Max.
Input Capacitance 4 10 10
C
IN
C
Output Capacitance 5
OUT
Power Dissipation
C
PD
6pF
Capacitance (note 1)
1)CPDisdefined asthevalue oftheIC’sinternal equivalentcapacitance whichis calculated fromtheoperatingcurrent consumptionwithout load.(Referto
TestCircuit).Average operatingcurrent canbeobtainedbythefollowingequation.I
(opr)= CPD• VCC• fIN+I
CC
CC
pF
pF
3/7
Page 4
74V1G03
TESTCIRCUIT
CL= 15/50 pF orequ ivalent (includes jigand probe capacitance)
R
=1KΩ orequivalent
L=R1
R
WAVEFORM:PROPAGATIONDELAYS (f=1MHz; 50% duty cycle)
ofpulse generator (typically50Ω)
T=ZOUT
4/7
Page 5
SOT23-5L MECHANICAL DATA
74V1G03
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.35 0.50 13.7 19.7
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
L 0.35 0.55 13.7 21.6
e 0.95 37.4
e1 1.9 74.8
mm mils
5/7
Page 6
74V1G03
SC-70 MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.80 1.10 31.5 43.3
A1 0.00 0.10 0.0 3.9
A2 0.80 1.00 31.5 39.4
b 0.15 0.30 5.9 11.8
C 0.10 0.18 3.9 7.1
D 1.80 2.20 70.9 86.6
E 1.80 2.40 70.9 94.5
E1 1.15 1.35 45.3 53.1
L 0.10 0.30 3.9 11.8
e 0.65 25.6
e1 1.3 51.2
mm mils
6/7
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74V1G03
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject tochange without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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