The 74LX1G86 is a low voltage C MOS SINGLE
EXCLUSIVEORGATEfabricatedwith
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
74LX1G86
SINGLE EXCLUSIVE OR GATE
SOT323-5LSOT23-5L
ORDER CODES
PACKAGET & R
SOT23-5L74LX1G86STR
SOT323-5L74LX1G86CTR
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inp uts with no
regard to the supply voltage. This device can be
usedto interface5V to 3V.
All inputsand outputs areequipped with
protection circuits against static discharge.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
absolute maximum rating must be observed
1) I
O
2) V
<GND
O
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC= 0V)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC VCCor Ground Current per Supply Pin
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
V
-50mA
-50mA
± 50mA
± 50mA
-65 to +150°C
300°C
2/11
Page 3
74LX1G86
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
T
dt/dvInput Rise and Fall Time (note 2)0 to 10ns/V
1) Truth Table guaranteed: 1.2V to 3.6V
from0.8V to 2V atVCC=3.0V
2) V
IN
DC SPECIFICATIONS
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC= 0V)
O
Output Voltage (High or Low State)0 to V
O
High or Low Level Output Current (VCC= 4.5 to 5.5V)
High or Low Level Output Current (VCC= 3.0 to 3.6V)
High or Low Level Output Current (VCC= 2.7 to 3.0V)
High or Low Level Output Current (VCC= 2.3 to 2.7V)
High or Low Level Output Current (VCC= 1.65 to 2.3V)
Operating Temperqture
op
Test ConditionValue
1.65 to 5.5V
0 to 5.5V
0 to 5.5V
CC
± 32mA
± 24mA
± 12mA
± 8mA
± 4mA
-55 to 125°C
V
SymbolParameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
Power Off Leakage
I
off
Current
Quiescent Supply
I
CC
Current
V
CC
(V)
1.65 to 1.95
3.0 to 5.5
1.65 to 1.95
3.0 to 5.5
1.65 to 3.6
1.65
2.3
2.7
3.0
4.5
1.65 to 3.6
1.65
2.3
2.7
3.0
4.5
1.65 to 5.5
0
1.65 to 5.5
3.6
-40 to 85 °C-55 to 125 °C
Min.Max.Min.Max.
0.75V
CC
0.7V
CC
0.7V
CC
0.25V
CC
0.3V
CC
0.3V
CC
IO=-100 µAVCC-0.1VCC-0.1
=-4 mA
I
O
=-8 mA
I
O
=-12 mA
I
O
I
=-18 mA
O
=-24 mA
I
O
=-32 mA
I
O
IO=100 µA
I
=4 mA
O
=8 mA
I
O
=12 mA
I
O
=24 mA
I
O
=32 mA
I
O
= 0 to 5.5V
V
I
or VO= 5.5V
V
I
VI=VCCor GND
or VO= 3.6 to 5.5V
V
I
1.21.2
1.91.9
2.22.2
2.42.4
2.22.2
3.83.8
0.10.1
0.450.45
0.30.3
0.40.4
0.550.55
0.550.55
± 10± 10µA
1010µA
1010
± 10± 10
0.75V
0.7V
0.7V
CC
CC
CC
0.25V
0.3V
0.3V
CC
CC
Unit
V2.3 to 2.7
CC
V2.3 to 2.7
V
V
µA
3/11
Page 4
74LX1G86
AC ELECTRICAL CHARACTERISTICS
Test ConditionValue
SymbolParameter
t
PLHtPHL
Propagation Delay
Time
V
(V)
CC
C
(pF)
R
L
(Ω)
= t
t
L
s
(ns)
1.65 to 1.95
2.3 to 2.72.05.02.05.0
3.0 to 3.61.04.81.04.8
151M3.0
4.5 to 5.51.03.61.03.6
-40 to 85 °C-55 to 125 °C
r
Min.Max.Min.Max.
2.09.02.09.0
Unit
ns
1.65 to 1.953010002.029.929.9
2.3 to 2.7305002.025.525.5
2.7505002.515.215.2
3.0 to 3.6505002.51515
4.5 to 5.5505002.51414
CAPACITIVE CHARACTERISTICS
Test ConditionValue
T
SymbolParameter
V
(V)
CC
Min.Typ.Max.
C
C
Input Capacitance
IN
Power Dissipation Capacitance
PD
(note 1)
04pF
1.8fIN= 10MHz21
3.326
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
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