Datasheet 74LX1G70CTR, 74LX1G70STR Datasheet (SGS Thomson Microelectronics)

1/10October 2002

■ 5V TOLERANT INPUTS

■ HIGH SPEED:t

PD

= 4. 2ns (MAX.) at VCC=3V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.)atTA=25°C

■ POWER DOWN PROTECTION ON INPUTS

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL= 24mA (MIN) at VCC=3V

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANGE:

V

CC

(OPR) = 1.65V to 5.5V

(1.2V Data Retention)

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74LX 1G70 is an advanced high-speed CMOS
SINGLE BUFFER fabricat ed with sub-micron
silicon gate and double - layer metal wiring C

2

MOS

technology.
It is ideal for 1.65 to 5.5 V

CC

operations and low
power and low noise applications. The i nternal
circuit is composed of 3 s tages including buffer

output, which provide high noise immunity and
stable output.
Powerdownprotectionisprovidedoninputand
output and 0 to 7V can be accepted on inputs with
no regard to the supply voltage. It c an be
interfaced to 5V signal e nv ironment for inputs in
mixed 3.3/5V system. All inputs and outputs are
equipped with protection circuits against static
discharge.

74LX1G70

SINGLE BUF FER

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-5L 74LX1G70STR

SOT323-5L 74LX1G70CTR

SOT323-5LSOT23-5L

74LX1G70

2/10

INPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION TRUTH TABLE

Absolute Maximum Rating are those value beyond which damage to the device may occour. Functional operation under these condition is
not implied

1) I

O

absolute maximum rating must be observed

2) V

O

<GND,VO>V

CC

PIN No SYMBOL NAME AND FUNCTION

1 NC Not Connected
2 1A Data Input
4 1Y Data Output
3 GND Ground (0V)
5

V

CC

Positive Supply Voltage

AY

LL

HH

Symbol Parameter² Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage (VCC= 0V)

-0.5 to +7.0 V

V

O

DC Output Voltage (High or Low State) (note 1) -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

-50 mA

I

OK

DC Output Diode Current (note 2)

-50 mA

I

O

DC Output Current

± 50 mA

I

CC

or I

GND

DC VCCor Ground Current per Supply Pin

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

300 °C

74LX1G70

3/10

RECOMMENDED OPERATING CONDITIONS

1) Truth Table guaranteed: 1.2V to 3.6V

2) V

IN

from0.8V to 2V atVCC=3.0V

DC SPECIFICATION

Symbol Parameter Value Unit

V

CC

Supply Voltage (note 1)

1.65 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage (VCC= 0V)

0 to 5.5 V

V

O

Output Voltage (High or Low State) 0 to V

CC

V

I

OH,IOL

High or Low Level Output Current (VCC= 4.5 to 5.5V)

± 32 mA

I

OH,IOL

High or Low Level Output Current (VCC= 3.0 to 3.6V)

± 24 mA

I

OH,IOL

High or Low Level Output Current (VCC= 2.7 to 3.0V)

± 16 mA

I

OH,IOL

High or Low Level Output Current (VCC= 2.3 to 2.7V)

± 8mA

I

OH,IOL

High or Low Level Output Current (VCC= 1.65 to 2.3V)

± 4mA

T

op

Operating Temperqture

-55 to 125 °C

dt/dv Input Rise and Fall Time (note 2) 0 to 10 ns/V

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

-40 to 85 °C -55 to 125 °C

Min. Max. Min. Max.

V

IH

High Level Input
Voltage

1.65 to 1.95

0.75V

CC

0.75V

CC

V2.3 to 2.7

0.7V

CC

0.7V

CC

3.0 to 5.5

0.7V

CC

0.7V

CC

V

IL

Low Level Input
Voltage

1.65 to 1.95

0.25V

CC

0.25V

CC

V2.3 to 2.7

0.3V

CC

0.3V

CC

3.0 to 5.5

0.3V

CC

0.3V

CC

V

OH

High Level Output
Voltage

1.65 to 4.5

I

O

=-100 µAVCC-0.1 VCC-0.1

V

1.65

I

O

=-4 mA

1.2 1.2

2.3

I

O

=-8 mA

1.9 1.9

3.0

I

O

=-16 mA

2.4 2.4

I

O

=-24 mA

2.2 2.2

4.5

I

O

=-32 mA

3.8 3.8

V

OL

Low Level Output
Voltage

1.65 to 4.5

IO=100 µA

0.1 0.1

V

1.65

I

O

=4 mA

0.45 0.45

2.3

I

O

=8 mA

0.3 0.3

3.0

I

O

=16 mA

0.4 0.4

I

O

=24 mA

0.55 0.55

4.5

I

O

=32 mA

0.55 0.55

I

I

Input Leakage
Current

1.65 to 5.5

V

I

= 0 to 5.5V

± 10 ± 10 µA

I

off

Power Off Leakage
Current

0

V

I

or VO= 5.5V

10 10 µA

I

CC

Quiescent Supply
Current

1.65 to 5.5

V

I=VCC

or GND

10 10 µA

74LX1G70

4/10

AC ELECTRICAL CHARACTERISTICS

CAPACITANCE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

R

L

(Ω)

t

s

= t

r

(ns)

-40 to 85 °C -55 to 125 °C

Min. Max. Min. Max.

t

PLHtPHL

Propagation Delay
Time

1.65 to 1.95
15 1MΩ 3.0

2 12.0 2 12.0

ns

2.3 to 2.7 2 7.0 2 7.0

3.0 to 3.6 1 4.7 1 4.7

4.5 to 5.5 1 4.1 1 4.1

1.65 to 1.95 30 1000 2.0 2 7.5 2 7.5

2.3 to 2.7 30 500 2.0 2 5.5 2 5.5

2.7 50 500 2.5 1 5.2 1 5.2

3.0 to 3.6 50 500 2.5 1 4.2 1 4.2

4.5 to 5.5 50 500 2.5 1 3.7 1 3.7

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

=25°C

Min. Typ. Max.

C

IN

Input Capacitance

04pF

C

PD

Power Dissipation Capacitance
(note 1)

1.8 fIN= 10MHz 16
pF2.5 18

3.3 20

74LX1G70

5/10

TEST CIRCUIT

RT=Z

OUT

of pulse generator (typically 50Ω)

TEST CIRCUIT AND WAV E FORM SYMBOL VALUE

WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)

Symbol

V

CC

1.65 to 1.95V 2.3 to 2.7V 2.7 to 5.5V

C

L

15pF/30pF 15pF/30pF 15pF/50pF

R

L

1MΩ/1000Ω 500Ω 500Ω

V

IH

V

CC

V

CC

V

CC

V

M

VCC/2 VCC/2 VCC/2

t

r=tr

<2.0ns <2.0ns <2.5ns

74LX1G70

6/10

DIM.

mm. mils

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.15 0.0 5.9

A2 0.90 1.30 35.4 51.2

b 0.35 0.50 13.7 19.7

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 2.60 3.00 102.3 118.1

E1 1.50 1.75 59.0 68.8

e0.95 37.4

e1 1.9 74.8

L 0.35 0.55 13.7 21.6

SOT23-5L MECHANICAL DATA

74LX1G70

7/10

DIM.

mm. mils

MIN. TYP MAX. MIN. TYP. MAX.

A 0.80 1.10 31.5 43.3

A1 0.00 0.10 0.0 3.9

A2 0.80 1.00 31.5 39.4

b 0.15 0.30 5.9 11.8

C 0.10 0.18 3.9 7.1

D 1.80 2.20 70.9 86.6

E 1.80 2.40 70.9 94.5

E1 1.15 1.35 45.3 53.1

e0.65 25.6

e1 1.3 51.2

L 0.10 0.30 3.9 11.8

SOT323-5L MECHANICAL DATA

74LX1G70

8/10

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

Tape & Reel SOT23-xL MECHANICAL DATA

74LX1G70

9/10

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 175 180 185 6.889 7.086 7.283

C 12.8 13 13.2 0.504 0.512 0.519

D 20.2 0.795

N 59.5 60 60.5 2.362

T 14.4 0.567
Ao 2.25 0.088
Bo 2.7 0.106
Ko 1.2 0.047
Po 3.98 4 4.2 0.156 0.157 0.165

P 3.98 4 4.2 0.156 0.157 0.165

Tape & Reel SOT323-xL MECHANICAL DATA

74LX1G70

10/10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he
consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or
systems without express written approval of STMicroelectronics.

© The ST logo is a registered trademark of STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

© http://www.st.com