The 74LX1G08 is a low voltage C MOS SINGLE
2-INPUT AND GATE fabricated with sub-micron
silicon gate and double - layer metal wiring C
2
MOS
tecnology.
It is ideal for 1.65 to 5. 5 V
operations and low
CC
power and low noise a pplications. The internal
circuit is composed of 3 stages including buffer
PIN CONNECTION AND IEC LOGIC SYMBOLS
output, which provide high noise immunity and
stable output.
Powerdownprotectionisprovidedoninputand
output and 0 to 7V can be accepted on inputs with
no regard to the supply voltage. It c an be
interfaced to 5V signal environment for inputs in
mixed 3.3/5V system.
All inputsand outputs areequipped with
protection circuits against static discharge.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) I
absolute maximum rating must be observed
O
2) V
<GND,VO>V
O
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC= 0V)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC VCCor Ground Current per Supply Pin
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
CC
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
V
-50mA
-50mA
± 50mA
± 50mA
-65 to +150°C
300°C
2/10
Page 3
74LX1G08
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
I
OH,IOL
T
dt/dvInput Rise and Fall Time (note 2)0 to 10ns/V
1) Truth Table guaranteed: 1.2V to 3.6V
from0.8V to 2V atVCC=3.0V
2) V
IN
DC SPECIFICATIONS
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC= 0V)
O
Output Voltage (High or Low State)0 to V
O
High or Low Level Output Current (VCC= 4.5 to 5.5V)
High or Low Level Output Current (VCC= 3.0 to 3.6V)
High or Low Level Output Current (VCC= 2.7 to 3.0V)
High or Low Level Output Current (VCC= 2.3 to 2.7V)
High or Low Level Output Current (VCC= 1.65 to 2.3V)
Operating Temperqture
op
Test ConditionValue
1.65 to 5.5V
0 to 5.5V
0 to 5.5V
CC
± 32mA
± 24mA
± 12mA
± 8mA
± 4mA
-55 to 125°C
V
SymbolParameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
I
Power Off Leakage
off
Current
I
Quiescent Supply
CC
Current
V
CC
(V)
1.65 to 1.95
3.0 to 5.5
1.65 to 1.95
3.0 to 5.5
1.65 to 4.5
1.65
2.3
3.0
4.5
1.65 to 4.5
1.65
2.3
3.0
4.5
1.65 to 5.5
0
1.65 to 5.5
-40 to 85 °C-55 to 125 °C
Min.Max.Min.Max.
0.75V
CC
0.7V
CC
0.7V
CC
0.25V
CC
0.3V
CC
0.3V
CC
=-100 µAVCC-0.1VCC-0.1
I
O
=-4 mA
I
O
=-8 mA
I
O
I
=-16 mA
O
=-24 mA
I
O
=-32 mA
I
O
IO=100 µA
=4 mA
I
O
=8 mA
I
O
I
=16 mA
O
=24 mA
I
O
=32 mA
I
O
= 0 to 5.5V
V
I
or VO= 5.5V
V
I
V
I=VCC
or GND
1.21.2
1.91.9
2.42.4
2.22.2
3.83.8
0.10.1
0.450.45
0.30.3
0.40.4
0.550.55
0.550.55
± 10± 10µA
1010µA
1010µA
0.75V
0.7V
0.7V
CC
CC
CC
0.25V
0.3V
0.3V
CC
CC
Unit
V2.3 to 2.7
CC
V2.3 to 2.7
V
V
3/10
Page 4
74LX1G08
AC ELECTRICAL CHARACTERISTICS
Test ConditionValue
SymbolParameter
t
PLHtPHL
Propagation Delay
Time
V
(V)
CC
C
(pF)
R
L
(Ω)
= t
t
L
s
(ns)
1.65 to 1.95
2.3 to 2.727.027.0
3.0 to 3.614.714.7
151MΩ3.0
-40 to 85 °C-55 to 125 °C
r
Min.Max.Min.Max.
212.0212.0
Unit
4.5 to 5.514.114.1
1.65 to 1.953010002.027.527.5
ns
2.3 to 2.7305002.025.525.5
2.7505002.515.215.2
3.0 to 3.6505002.514.214.2
4.5 to 5.5505002.513.713.7
CAPACITANCE CHARACTERISTICS
Test ConditionValue
=25°C
SymbolParameter
V
CC
(V)
C
C
Input Capacitance
IN
Power Dissipation Capacitance
PD
(note 1)
1.8fIN= 10MHz21
3.326
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
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consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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