The 74LX1G07 is a low voltage C MOS SINGLE
BUFFER(OPENDRAIN)fabricatedwith
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
=4.2ns (MAX.) at VCC=
PD
74LX1G07
SOT323-5LSOT23-5L
ORDER CODES
PACKAGET & R
SOT23-5L74LX1G07STR
SOT323-5L74LX1G07CTR
Power down protection is provided on input and 0
to 7V can be accepted on input with no rega rd to
the su pply voltage. This device can be used to
interface5Vto3V.
PIN CO NNE CTION AND IEC LOGIC SYMB OLS
1/10October 2002
Page 2
74LX1G07
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DE SCRIP TIONTRUTH TABLE
PIN NoSYMBOLNAME AND FUNCTION
1NCNot Connected
21AData Input
41YData Output
Z: HighImpedance
AY
LL
HZ
3GNDGround (0V)
5
V
CC
Positive Supply Voltage
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
V
V
I
I
OK
I
I
CC
I
GND
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (VCC= 0V)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC Supply Current per Supply Pin
DC Ground Current per Supply Pin
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
V
-50mA
-50mA
± 50mA
± 100mA
± 100mA
-65 to +150°C
300°C
2/10
Page 3
74LX1G07
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
I
OL
I
OL
I
OL
I
OL
I
OL
T
dt/dvInput Rise and Fall Time (note 2)0 to 10ns/V
1) Truth Table guaranteed: 1.2V to 3.6V
2) V
from0.8V to 2V at VCC=3.0V
IN
DC SPECIFICATIONS
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (VCC= 0V)
O
Output Voltage (High or Low State)0 to V
O
High or Low Level Output Current (VCC= 4.5 to 5.5V)
High or Low Level Output Current (VCC= 3.0 to 3.6V)
High or Low Level Output Current (VCC= 2.7 to 3.0V)
High or Low Level Output Current (VCC= 2.3 to 2.7V)
High or Low Level Output Current (VCC= 1.65 to 2.3V)
Operating Temperqture
op
Test ConditionValue
1.65 to 5.5V
0 to 5.5V
0 to 5.5V
CC
+ 32mA
+24mA
+ 12mA
+ 8mA
+ 4mA
-55 to 125°C
V
SymbolParameter
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
Low Level Output
OL
Voltage
High Impedance
I
OZ
Output Leakage
Current
I
Input Leakage
I
Current
I
Power Off Leakage
off
Current
I
Quiescent Supply
CC
Current
V
CC
(V)
1.65 to 1.95
3.0 to 5.5
1.65 to 1.95
3.0 to 5.5
1.65 to 4.5
1.65
2.3
3.0
4.5
3.6
1.65 to 5.5
0
1.65 to 5.5
3.6
IO=100 µA
=4 mA
I
O
=8 mA
I
O
I
=16 mA
O
=24 mA
I
O
=32 mA
I
O
= 0 to 5.5V
V
I
= 0 to 5.5V
V
I
or VO= 5.5V
V
I
VI=VCCor GND
or VO= 3.6 to 5.5V
V
I
-40 to 85 °C-55 to 125 °C
Min.Max.Min.Max.
0.75V
0.7V
0.7V
CC
CC
CC
0.25V
0.3V
0.3V
CC
CC
CC
0.75V
0.7V
0.7V
CC
CC
CC
0.25V
0.3V
0.3V
0.10.1
0.450.45
0.30.3
0.40.4
0.550.55
0.550.55
± 10± 10µA
± 10± 10µA
1010µA
1010
± 10± 10
CC
CC
Unit
V2.3 to 2.7
CC
V2.3 to 2.7
V
µA
3/10
Page 4
74LX1G07
AC ELECTRICAL CHARACTERISTICS
Test ConditionValue
SymbolParameter
t
PLZ
Propagation Delay
Time
1.65 to 1.953010002.01.88.31.88.3
2.3 to 2.7305002.01.25.51.25.5
3.0 to 3.6505002.50.84.20.84.2
4.5 to 5.5505002.50.53.50.53.5
t
PZL
Propagation Delay
Time
1.65 to 1.953010002.01.88.31.88.3
2.3 to 2.7305002.01.25.51.25.5
3.0 to 3.6505002.50.84.20.84.2
4.5 to 5.5505002.50.53.50.53.5
CAPACITIVE CHARACTERISTICS
SymbolParameter
C
C
OUT
C
Input Capacitance
IN
Output Capacitance
Power Dissipation Capacitance
PD
(note 1)
V
(V)
CC
C
(pF)
R
L
(Ω)
= t
t
1
s
(ns)
-40to85°C-55to125°C
r
Min.Max.Min.Max.
2.7505002.51515
2.7505002.51515
Test ConditionValue
=25°C
T
V
(V)
3.3
3.3
CC
VIN= 0 or V
VIN= 0 or V
CC
CC
A
Min.Typ.Max.
2.5pF
4pF
1.8fIN= 10MHz16
3.320
Unit
ns
ns
Unit
pF2.518
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
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