Datasheet 74LVX157TTR, 74LVX157MTR, 74LVX157M Datasheet (SGS Thomson Microelectronics)

74LVX157

LOW VOLTAGE QUAD 2 CHANNEL MULTIPLEXER

WITH 5V TOLERANT INPUTS

■ HIGH SPEED :

t

= 5.1 ns (TYP.) at V

PD

■ 5V TOLERANT INPUTS

■ INPUT VOLTAGE LEVEL :

V

=0.8V , VIH=2V at VCC=3V

IL

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ LOW NOISE:

V

= 0.3V (TYP.) at VCC = 3.3V

OLP

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 4mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANGE:

V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

PHL

(OPR) = 2V to 3.6V (1.2V Data Retention)

CC

= 3.3V

74 SERIES 157

■ IMPROVED LATCH-UP IMMUNITY

■ POWER DOWN PROTECTION ON INPUTS

DESCRIPTION

The 74LVX157 i s a low voltage CMOS QUAD 2
CHANNEL MULTIPLEXER fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology. It is ideal for low
power, battery operated and low noise 3.3V
applications.
It consists of four 2-input d igital multiplexers with
common select and strobe inputs. When STROBE

TSSOPSOP

ORDER CODES

PACKAGE TUBE T & R

SOP 74LVX157M 74LVX157MTR

TSSOP 74LVX157TTR

input is held high, selection of data is inhibited and
all the outputs become low. The SELECT
decoding determines whether the A or B inputs
get routed to their corresponding Y outputs.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/9July 2001

74LVX157

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1 SELECT Common Data Select

2, 5, 11, 14 1A to 4A Data Inputs From Source

3, 6, 10, 13 1B to 4B Data Inputs From Source

4, 7, 9, 12 1Y to 4Y Multiplexer Outputs

15 STROBE

8 GND Ground (0V)

16 V

TRUTH TABLE

INPUTS OUTPUT

CC

Inputs

A

B

Strobe Input

Positive Supply Voltage

STROBE

SELECT A B Y

HXXXL

LLLXL
LLHXH
LHXLL
LHXHH

X : Don’t Ca re

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

dt/dv

1) Truth T abl e guarante ed: 1.2V to 3.6 V

2) V

from 0.8V to 2.0V

IN

Supply Voltage (note 1)

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 2) (V

= 3.3V)

CC

2 to 3.6 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100 ns/V

2/9

V

DC SPECIFICATIONS

Symbol Parameter

V

High Level Input

IH

Voltage

Low Level Input

V

IL

Voltage

V

V

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current

I

Quiescent Supply

CC

Current

74LVX157

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.5 1.5 1.5

3.6 2.4 2.4 2.4

2.0 0.5 0.5 0.5

3.6 0.8 0.8 0.8

2.0

3.0

2.0

3.0

3.6

3.6

IO=-50 µA
I

=-50 µA

O

I

=-4 mA

O

=50 µA

I

O

I

=50 µA

O

I

=4 mA

O

= 5V or GND

V

I

= VCC or GND

V

I

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

2.58 2.48 2.4

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

-40 to 85°C -55 to 125°C

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

22020µA

Unit

V3.0 2.0 2.0 2.0

V3.0 0.8 0.8 0.8

V3.0

V3.0

DYNAMIC SWITCHING CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

V

CC

(V)

V
V

V

Dynamic Low

OLP

Voltage Quiet

OLV

Output (note 1, 2)
Dynamic High

IHD

Voltage Input (note

3.3

3.3 2
= 50 pF

C

L

1, 3)

V

Dynamic Low

ILD

Voltage Input (note

3.3 0.8

1, 3)

1) Worst c ase package .

2) Max number of outp ut s defined as (n). Data inputs are driven 0V to 3.3V, (n-1) outputs switching and one output at GND.

3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.3V. Inputs under test switching: 3.3V to threshold (V
(V

), f=1MHz.

IHD

= 25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

0.3 0.5

-0.5 -0.3

ILD

Unit

V

), 0V to threshold

3/9

74LVX157

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)

Test Condition Value

T

Symbol Parameter

t

PLH tPHL

Propagation Delay
Time
(A, B - Y)

3.3

3.3

t

PLH tPHL

Propagation Delay
Time
(SELECT - Y)

3.3

3.3

t

PLH tPHL

Propagation Delay
Time
(STROBE

- Y)

3.3

3.3

t

OSLH

t

OSHL

1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switch­ing in the same direction, either HI GH or LOW

2) Param eter guaran teed by design
(*) Vol tage range is 3. 3V ±

Output To Output
Skew Time (note1,

2)

0.3V

3.3

C

V

CC

(V)

L

(pF)

2.7 15 6.6 12.5 1.0 15.5 1.0 16.5

2.7 50 9.1 16.0 1.0 19.0 1.0 20.0

(*)

15 5.1 7.9 1.0 9.5 1.0 11.0

(*)

50 7.6 11.4 1.0 13.0 1.0 14.0

2.7 15 8.9 16.9 1.0 20.5 1.0 21.5

2.7 50 11.4 20.4 1.0 24.0 1.0 26.0

(*)

15 7.0 11.0 1.0 13.0 1.0 14.0

(*)

50 9.5 14.5 1.0 16.5 1.0 17.5

2.7 15 9.1 17.6 1.0 20.5 1.0 21.5

2.7 50 11.6 21.1 1.0 20.4 1.0 21.4

(*)

15 7.2 11.5 1.0 13.5 1.0 14.5

(*)

50 9.7 15.0 1.0 17.0 1.0 18.0

2.7 50 0.5 1.0 1.5 1.5

(*)

50

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

0.5 1.0 1.5 1.5

-40 to 85°C -55 to 125°C

Unit

ns

ns

ns

ns

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

V

CC

(V)

3.3 4 10 10 pF

= 10MHz

3.3

f

IN

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

20 pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

CC(opr)

= CPD x VCC x f

+ ICC/n (p er ci rcui t )

IN

Unit

4/9

74LVX157

TEST CIRCUIT

CL =15/50pF or equivalent (i ncludes jig and probe cap acitance)

= Z

R

WAVEFORM 1 : PROPAGATION DELAYS FOR INVERTING CONDITIONS (f=1MHz; 50% duty cy cle)

of pulse generator (typically 50Ω)

T

OUT

5/9

74LVX157

WAVEFORM 2 : PROPAGATION DELAYS FOR NON-INVERTING CONDITIONS

(f=1MHz; 50% duty cycle)

6/9

SO-16 MECHANICAL DATA

74LVX157

DIM.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 8.89 0.350

F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.62 0.024
S8° (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

PO13H

7/9

74LVX157

TSSOP16 MECHANICAL DATA

mm. inch

DIM.

MIN. TYP MAX. MIN. TYP. M AX.

A 1.2 0.047

A1 0.05 0.15 0.002 0.004 0.006

A2 0.8 1 1.05 0.031 0.039 0.041

b 0.19 0.30 0.007 0.012

c 0.09 0.20 0.004 0.0089

D 4.9 5 5.1 0.193 0.197 0.201

E 6.2 6.4 6.6 0.244 0.252 0.260

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0° 8°0° 8°

L 0.45 0.60 0.75 0.018 0.024 0.030

A2

A

A1

b

e

c

K

L

E

D

E1

PIN 1 IDENTIFICATION

8/9

1

0080338D

74LVX157

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
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previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.

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