VCC = 1.0V to 2.0V
VCC = 2.0V to 2.7V
VCC = 2.7V to 3.6V
VCC = 3.6V to 5.5V
= 1.0V (input levels GND or VCC); DC characteristics are guaranteed from VCC = 1.2V to VCC = 5.5V.
–40
–40
–
–
–
–
–
–
–
–
CC
CC
+85
+125
500
200
100
50
ns/V
V
V
°C
1998 Apr 20
3
Page 4
Philips SemiconductorsProduct specification
V
V
V
V
voltage
V
V
voltage
Hex inverter
ABSOLUTE MAXIMUM RATINGS
1, 2
74LVU04
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
GND
I
CC
T
stg
P
TOT
DC supply voltage–0.5 to +7.0V
DC input diode currentVI < –0.5 or VI > VCC + 0.5V20mA
DC output diode currentVO < –0.5 or VO > VCC + 0.5V50mA
DC output source or sink current
– standard outputs
DC VCC or GND current for types with
,
– standard outputs50
Storage temperature range–65 to +150°C
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
PARAMETERCONDITIONSRATINGUNIT
–0.5V < VO < VCC + 0.5V
25
mA
mA
for temperature range: –40 to +125°C
above +70°C derate linearly with 12 mW/K
above +70°C derate linearly with 8 mW/K
above +60°C derate linearly with 5.5 mW/K
750
500
400
mW
NOTE:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. V oltages are referenced to GND (ground = 0V).
SYMBOLP ARAMETERTEST CONDITIONS
VCC = 1.2V1.01.0
IH
HIGH level Input
voltage
VCC = 2.0V1.61.6
VCC = 2.7 to 3.6V2.42.4
VCC = 4.5 to 5.5V0.8V
VCC = 1.2V0.20.2
IL
LOW level Input
voltage
VCC = 2.0V0.40.4
VCC = 2.7 to 3.6V0.50.5
VCC = 4.5 to 5.50.2V
VCC = 1.2V; VI = VIH or V
VCC = 2.0V; VI = VIH or V
OH
HIGH level output
VCC = 2.7V; VI = VIH or V
V
VCC = 3.0V; VI = VIH or V
VCC = 4.5V;VI = VIH or V
OH
HIGH level output
voltage
VCC = 3.0V;VI = VIH or V
VCC = 4.5V;VI = VIH or V
VCC = 1.2V; VI = VIH or V
VCC = 2.0V; VI = VIH or V
OL
LOW level output
VCC = 2.7V; VI = VIH or V
V
VCC = 3.0V;VI = VIH or V
VCC = 4.5V;VI = VIH or V
–IO = 100µA1.2
IL;
–IO = 100µA1.82.01.8
IL;
–IO = 100µA2.52.72.5
IL;
–IO = 100µA2.83.02.8
IL;
–IO = 100µA4.34.54.3
IL;
–IO = 6mA2.402.822.20
IL;
–IO = 12mA3.604.203.50
IL;
IO = 100µA0
IL;
IO = 100µA00.20.2
IL;
IO = 100µA00.20.2
IL;
IO = 100µA00.20.2
IL;
IO = 100µA00.20.2
IL;
-40°C to +85°C -40°C to +125°C
MINTYP
CC
LIMITS
1
MAXMINMAX
0.8V
CC
CC
0.2V
UNIT
CC
V
V
1998 Apr 20
4
Page 5
Philips SemiconductorsProduct specification
V
V
CONDITION
nA to nY
Hex inverter
DC ELECTRICAL CHARACTERISTICS (Continued)
SYMBOLPARAMETERTEST CONDITIONS
LOW level output
OL
voltage
±I
I
∆I
Input leakage currentVCC = 5.5V; VI = VCC or GND1.01.0µA
I
Quiescent supply
CC
current
Additional quiescent
CC
supply current per input
VCC = 3.0V;VI = VIH or V
VCC = 4.5V;VI = VIH or V
VCC = 5.5V; VI = VCC or GND; IO = 020.040.0µA
VCC = 2.7V to 3.6V; VI = VCC –0.6V500850µA
NOTE:
1. All typical values are measured at T
amb
= 25°C.
AC CHARACTERISTICS
GND = 0V; tr = tf = 2.5ns; CL = 50pF; RL = 500Ω
SYMBOLPARAMETERWAVEFORM
t
PHL/PLH
NOTES:
1. Unless otherwise stated, all typical values are measured at T
2. Typical values are measured at V
Propagation delay
= 3.3 V.
CC
Figure 1
IL;
IL;
3.0 to 3.67
4.5 to 5.579
amb
74LVU04
LIMITS
-40°C to +85°C -40°C to +125°C
MINTYP
IO = 6mA0.250.400.50
IO = 12mA0.350.550.65
VCC(V)MINTYP
1.235
2.0121417
2.791013
= 25°C
1
MAXMINMAX
LIMITS
–40 to +85 °C–40 to +125 °C
1
MAXMINMAX
2
810
UNIT
UNIT
ns
AC WAVEFORMS
VM = 1.5 V at VCC 2.7 V and ≤ 3.6 V
V
= 0.5 × VCC at VCC < 2.7 V and ≥ 4.5 V
M
V
and VOH are the typical output voltage drop that occur with the
OL
output load.
V
I
nA INPUT
GND
V
OH
nY OUTPUT
V
OL
Figure 1. Input (nA) to output (nY) propagation delays
and output transition times.
V
M
t
PHL
V
M
t
PLH
SV00395
TYPICAL TRANSFER CHARACTERISTICS
1.2
V
o
(V)
0.8
0.4
0
00.40.8
V
O
VCC = 1.2 V; IO = 0 V.
I
Figure 2.
Vi (V)
D
1.2
SV00401
300
200
100
0
I
D
(mA)
1998 Apr 20
5
Page 6
Philips SemiconductorsProduct specification
Hex inverter
TYPICAL TRANSFER CHARACTERISTICS (
2.0
1.6
V
o
(V)
1.2
0.8
0.4
0
00.40.8
VCC = 2.0 V; IO = 0 V.
V
O
1.2
Vi (V)
I
D
1.62.0
Figure 3.
3.0
V
o
(V)
5
4
3
2
1
0
18
Continued)
I
D
(mA)
SV00402
I
D
(mA)
74LVU04
R
= 560 kW
bias
V
CC
inputoutput
Vi ~
(f = 1 kHz)
Figure 5. Test set-up for measuring forward transconductance
g
= diO/dvi at vO is constant (see also graph Figure 6).
fs
40
30
g
fs
(mA/V)
20
100 mF0.47 mF
i
A
o ~
GND
SV00323
2.0
1.0
12
10
6
0
0
1.02.03.0
V
O
VCC = 3.0 V; IO = 0 V.
Vi (V)
I
D
0
SV00403
g
fs
0
01234
VCC (V)
Figure 6. Typical forward transconductance
as a function of the supply voltage VCC at T
SV00405
amb
= 25°C.
Figure 4.
1998 Apr 20
6
Page 7
Philips SemiconductorsProduct specification
Hex inverter
APPLICATION INFORMATION
Some applications for the 74LVU04 are:
•Linear amplifier (see Figure 7)
•In crystal oscillator designs (see Figure 8)
•Astable multivibrator (see Figure 9)
R
2
V
CC
R
1 mF
1
U04
Z
L
GND
Note:
> 10kΩ; AOL = 20 (typical)
Z
L
Au –
3 kΩ < R1, R2 < 1 MΩ
Typical unity gain bandwidth product is 5 MHz.
C
, see Figure10
l
AOL = open loop amplification
Au = voltage amplification
SO14: plastic small outline package; 14 leads; body width 3.9 mmSOT108-1
74LVU04
1998 Apr 20
10
Page 11
Philips SemiconductorsProduct specification
Hex inverter
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mmSOT337-1
74LVU04
1998 Apr 20
11
Page 12
Philips SemiconductorsProduct specification
Hex inverter
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mmSOT402-1
74LVU04
1998 Apr 20
12
Page 13
Philips SemiconductorsProduct specification
Hex inverter
74LVU04
NOTES
1998 Apr 20
13
Page 14
Philips SemiconductorsProduct specification
Hex inverter
74LVU04
DEFINITIONS
Data Sheet IdentificationProduct StatusDefinition
Objective Specification
Preliminary Specification
Product Specification
Formative or in Design
Preproduction Product
Full Production
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICA TIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
print codeDate of release: 05-96
Document order number:9397-750-04405
1998 Apr 20
14
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