The 74LVC1G10 is a single 3-input positive NAND gate with
a standard push-pull output. The device is designed for
operation with a power supply range of 1.65V to 5.5V. The
inputs are tolerant to 5.5V allowing this device to be used in
a mixed voltage environment. The device is fully specified
for partial power down applications using IOFF. The IOFF
circuitry disables the output preventing damaging current
backflow when the device is powered down.
The gate performs the positive Boolean function:
CBAY••= or CBAY++=
NEW PRODUCT
Features
• Wide Supply Voltage Range from 1.65V to 5.5V
• ± 24mA Output Drive at 3.3V
• CMOS low power consumption
• IOFF Supports Partial-Power-Down Mode Operation
• Inputs accept up to 5.5V
• ESD Protection Exceeds JESD 22
200-V Machine Model (A115-A)
2000-V Human Body Model (A114-A)
• Latch-Up Exceeds 100mA per JESD 78, Class II
• Range of Package Options
• SOT26, SOT363, DFN1410, and DFN1010: Available in
“Green” Molding Compound (no Br, Sb)
• Lead Free Finish/ RoHS Compliant (Note 1)
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
A
GND
B
GND
Applications
• Voltage Level Shifting
• General Purpose Logic
• Power Down Signal Isolation
• Wide array of products such as:
o PCs, networking, notebooks, netbooks, PDAs
o Computer peripherals, hard drives, CD/DVD ROM
o TV, DVD, DVR, set top box
o Cell Phones, Personal Navigation / GPS
o MP3 players ,Cameras, Video Recorders
VI
VO Voltage applied to output in high impedance or I
VO
IIK Input Clamp Current VI<0
IOK
IO
Continuous current through Vdd or GND ±100 mA
TJ
T
STG
Notes: 2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.
Supply Voltage Range -0.5 to 6.5 V
Input Voltage Range -0.5 to 6.5 V
state
OFF
Voltage applied to output in high or low state
Output Clamp Current -50 mA
Continuous output current ±50 mA
Operating Junction Temperature -40 to 150 °C
Storage Temperature -65 to 150 °C
Notes: 4. Test condition for SOT26, SOT363, DFN1410 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
74LVC1G10
Document number: DS35121 Rev. 3 - 2
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Switching Characteristics
T
= -40°C to 85°C, CL = 15pF (see Figure 1)
A
Parameter
tpd
From
(Input)
Any Y
TA = -40°C to 85°C, CL = 30 or 50pF (see Figure 2)
Parameter
tpd
From
(Input)
Any Y
TA = -40°C to 125°C, CL = 15 pF (see Figure 1)
NEW PRODUCT
Parameter
tpd
From
(Input)
Any Y
TA = -40°C to 125°C , CL = 30 or 50pF (see Figure 2)
Notes: A . Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate ≤ 10 MHz C. Inputs are measured separately one transition per measurement
D. t
Notes: 5. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
6. The taping orientation is located on our website at http://www.diodes.com/datasheets/ap02007.pdf
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