Datasheet 74LVC08ATTR, 74LVC08AMTR, 74LVC08AM Datasheet (SGS Thomson Microelectronics)

74LVC08A

LOW VOLTAGE CMOS QUAD 2-INPUT AND GATE

HIGH PERFORMANCE

■ 5V TOLERANT INPUTS

■ HIGH SPEED: t

■ POWER DOWN PROTECTION ON INPU T S

= 4.1ns (MAX.) at VCC = 3V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 24mA (MIN) at VCC = 3V

OH

■ PCI BUS LEVELS GUARANT EED AT 2 4 mA

■ BALANCED PROPAGATION DELAYS:

≅ t

t

PLH

■ OPERATING VOLTAGE RANGE:

V

CC

PHL

(OPR) = 1.65V to 3.6V (1.2V Data

Retention)

■ PIN AND FUNCTION COMPATIBLE WITH

74 SERIES 08

■ LATCH-UP PERFORMANCE EXCEEDS

500mA (JESD 17)

■ ESD PERFORMANCE:

HBM > 2000V (MIL STD 883 method 3015); MM > 200V

DESCRIPTION

The 74LVC08A is a low voltage CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C technology. It is ideal for 1.65 to 3.6 V

2

MOS

CC

TSSOPSOP

ORDER CODES

PACKAGE TUBE T & R

SOP 74LVC08AM 74LVC08AMTR

TSSOP 74LVC08ATTR

operations and low power and low noise applications. It can be interfaced to 5V signal environment for inputs in mixed 3.3/5V system. It has more speed performance at 3.3V than 5V AC/ACT family, combined with a lower power consumption. All inputs and outputs are equipped with protection circuits against stat ic discharge, giving them 2KV ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8February 2002

74LVC08A

INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION TRUTH TABLE

PIN No SYMBOL NAME AND FUNCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

V

CC

Positive Supply Voltage

ABY

LLL

LHL HLL HHH

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V V V

I

OK

I

or I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

1) I

absolute ma xim um rating must be obse rved

O

2) V

< GND

O

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (VCC = 0V)

O

DC Output Voltage (High or Low State) (note 1) -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current (note 2) DC Output Current

O

DC VCC or Ground Current per Supply Pin

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V V

- 50 mA

± 50 mA

± 100 mA

-65 to +150 °C

300 °C

2/8

74LVC08A

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V V V

I

OH

I

OH

I

OH

I

OH

T

dt/dv Input Rise and Fall Time (note 2) 0 to 10 ns/V

1) Truth T abl e guarante ed: 1.2V to 3.6 V

2) V

from 0.8V to 2V at VCC = 3.0V

IN

DC SPECIFICATIONS

Supply Voltage (note 1)

CC

Input Voltage

I

Output Voltage (VCC = 0V)

O

Output Voltage (High or Low State) 0 to V

O

, I

High or Low Level Output Current (VCC = 3.0 to 3.6V)

OL

, I

High or Low Level Output Current (VCC = 2.7 to 3.0V)

OL

, I

High or Low Level Output Current (VCC = 2.3 to 2.7V)

OL

, I

High or Low Level Output Current (VCC = 1.65 to 2.3V)

OL

Operating Temperature

op

Test Condition Value

1.65 to 3.6 V 0 to 5.5 V 0 to 5.5 V

CC

± 24 mA ± 12 mA

± 8mA ± 4mA

-55 to 125 °C

V

Symbol Parameter

V

I

CC

∆I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current Power Off Leakage

off

Current Quiescent Supply

Current

ICC incr. per Input

CC

V

CC

(V)

1.65 to 1.95

-40 to 85 °C -55 to 125 °C

Min. Max. Min. Max.

0.65V

CC

0.65V

CC

2.3 to 2.7 1.7 1.7

2.7 to 3.6 2 2

1.65 to 1.95

0.35V

CC

0.35V

2.3 to 2.7 0.7 0.7

2.7 to 3.6 0.8 0.8

1.65 to 3.6

1.65

2.3

2.7

3.0

1.65 to 3.6

1.65

2.3

2.7

3.0

3.6

0

3.6

2.7 to 3.6

IO=-100 µAVCC-0.2 VCC-0.2

I

=-4 mA

O

I

=-8 mA

O

I

=-12 mA

O

I

=-18 mA

O

I

=-24 mA

O

IO=100 µA

I

=4 mA

O

I

=8 mA

O

I

=12 mA

O

I

=24 mA

O

= 0 to 5.5V

V

I

or VO = 5.5V

V

I

VI = VCC or GND V

or VO = 3.6 to

I

5.5V

VIH = VCC-0.6V

1.2 1.2

1.7 1.7

2.2 2.2

2.4 2.4

2.2 2.2

0.2 0.2

0.45 0.45

0.7 0.7

0.4 0.4

0.55 0.55 ± 5 ± 5 µA

10 10 µA 10 10

± 10 ± 10

500 500 µA

Unit

V

CC

V

µA

3/8

74LVC08A

DYNAMIC SWITCHING CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

V

OLP

V

OLV

1) Number of output defined as "n". Measured with "n-1" outputs switc hi ng from HIGH to LOW or LOW to H IGH. The remai ning outp ut is measur ed i n the LOW sta te.

Dynamic Low Level Quiet Output (note 1)

V

(V)

3.3

CC

= 50pF

C

L

V

= 0V, VIH = 3.3V

IL

Min. Typ. Max.

AC ELECTRICAL CHARACTERISTICS

Test Condition Value

= 25 °C

A

0.8

-0.8

Unit

V

Symbol Parameter

t

PLH tPHL

Propagation Delay Time

V

(V)

CC

C

(pF)

R

(Ω)

t

L

s

(ns)

L

-40 to 85 °C -55 to 125 °C

= t

r

Min. Max. Min. Max.

1.65 to 1.95 30 1000 2.0 9.0 12

2.3 to 2.7 30 500 2.0 6.0 8.0

2.7 50 500 2.5 4.8 5.8

Unit

ns

3.0 to 3.6 50 500 2.5 1 4.1 1 5.0

t

OSLH

t

OSHL

1) Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switching in the same direction, either HIGH or LOW ( t

2) Param eter guaranteed by design

Output To Output Skew Time (note1,

2)

2.7 to 3.6 1 1 ns

OSLH

= | t

PLHm

- t

PLHn

|, t

OSHL

= | t

PHLm

- t

PHLn

|

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25 °C

Symbol Parameter

V

CC

(V)

C

Input Capacitance

IN

Power Dissipation Capacitance

PD

(note 1)

1.8 fIN = 10MHz 33

3.3 38

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

CC(opr)

T

A

Min. Typ. Max.

4pF

= CPD x VCC x fIN + ICC/n (per c ircuit )

Unit

pF2.5 36

4/8

TEST CIRCUIT

74LVC08A

RT = Z

of pulse generator (typically 50Ω)

OUT

TEST CIRCUIT AND WAVEFORM SYMBOL VALUE

V

Symbol

CC

1.65 to 1.95V 2.3 to 2.7V 2.7V 3.0 to 3.6V

C

L

R

L

V

IH

V

M

V

OH

t

= t

r

30pF 30pF 50pF 50pF

1000Ω 500Ω 500Ω 500Ω

V

CC

V

CC

2.7V 2.7V

VCC/2 VCC/2 1.5V 1.5V

V

CC

V

CC

3.0V 3.0V

<2.0ns <2.0ns <2.5ns <2.5ns

WAVEFORM: PROPAGATION DELAY (f=1 MHz; 5 0 % duty cycle)

5/8

74LVC08A

SO-14 MECHANICAL DATA

DIM.

A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019 c1 45° (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050 M 0.68 0.026 S8° (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

6/8

PO13G

74LVC08A

TSSOP14 MECHANICAL DATA

mm. inch

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.2 0.047

A1 0.05 0.15 0.002 0.004 0.006

A2 0.8 1 1.05 0.031 0.039 0.041

b 0.19 0.30 0.007 0.012

c 0.09 0.20 0.004 0.0089

D 4.9 5 5.1 0.193 0.197 0.201

E 6.2 6.4 6.6 0.244 0.252 0.260

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0° 8°0° 8°

L 0.45 0.60 0.75 0.018 0.024 0.030

A2

A

A1

b

e

c

K

L

E

D

E1

PIN 1 IDENTIFICATION

1

0080337D

7/8

74LVC08A

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibilit y for t he consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or systems without express written approval of STMicroelectronics.

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