LOW VOLTAG E CMOS 16-BIT BUS BUFFER (3-STATE INV.)
WITH 5V TOLERANT INPUTS AND OUTPUTS
■ 5V TOLERANT INPUTS AND OUTPUTS
■ HIGH SPEED :
t
= 4.5 ns (MAX.) at VCC=3V
PD
■ POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL= 24mA (MIN) at VCC=3V
OH
■ PCI BUS LEVELS GUARANTEED AT 24 mA
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
PHL
■ OPERATING VOLTAGE RAN GE:
V
(OPR) = 2.0V to 3.6V (1.5V D ata
CC
Retention)
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 16240
■ LATCH-UP PERFORMANCE EXCEEDS
500mA (JESD 17)
■ ESD PERFORMANCE:
HBM > 2000V (MIL STD 883 method 3015);
MM > 200V
ORDER CODES
PACKAGETUBET & R
TSSOP74LCX16240TTR
PIN CO NNE CTION
TSSOP
DESCRIPTION
The 74LCX16240 is a low voltage CMOS 16 BIT
BUS B UFF ER fabricated with sub-micron silicon
gate and double-layer metal wiring C
2
MOS
technology. It is ideal for low power and high
speed 3. 3V applications; it can be interfaced to 5V
signal environment for both inputs and outputs.
Any nG
ERS. Output Enable input (nG
output control governs fou r BUS BUFF-
) tied together gives
full 16-bit operation.
When nG
is LO W, the outputs are on. When nG is
HIGH, the output are in high impedance state.
This device is designed to be used with 3 state
memory address drivers, etc.
It has same speed performance at 3.3V than 5V
AC/ACT family, combined with a lower power
consumption.
All inputs and outputs are equipped with protection circuits against static disc harge, giving them
2KV ESD immunity and transient excess vo ltage.
253G
30, 29, 27, 26 4A1 to 4A4 Data Outputs
36, 35, 33, 32 3A1 to 3A4 Data Outputs
41, 40, 38, 37 2A1 to 2A4 Data Outputs
47, 46, 44, 43 1A1 to 1A4 Data Outputs
482G
4, 10, 15, 21,
28, 34, 39, 45
7, 18, 31, 42
to 1Y4 Data Outputs
to 2Y4 Data Outputs
to 3Y4 Data Outputs
to 4Y4 Data Outputs
GNDGround (0V)
V
CC
Output Enable Input
Output Enable Input
Output Enable Input
Output Enable Input
Positive Supply Voltage
TRUTH TABLE
INPUTSOUTPUT
G
LLH
LHL
HXZ
X : Don‘t Care
Z : High Impedance
AnYn
IEC LOGIC SYMBOLS
2/10
Page 3
74LCX16240
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
V
V
I
I
OK
I
I
CC
I
GND
T
T
Absolute Maximum Ratings are those values beyond which damage tothe device may occur. Functional operation under these conditions is
not implied
1) I
absolute maximum rating must be observed
O
2) VO<GND
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
I
OH,IOL
I
OH,IOL
T
dt/dvInput Rise and Fall Time (note 2)0 to 10ns/V
1) Truth Table guaranteed: 1.5V to 3.6V
from0.8V to 2Vat VCC=3.0V
2) V
IN
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (OFF State)
O
DC Output Voltage (High or Low State) (note 1)-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current (note 2)
DC Output Current
O
DC Supply Current per Supply Pin
DC Ground Current per Supply Pin
Storage Temperature
stg
Lead Temperature (10 sec)
L
Supply Voltage (note 1)
CC
Input Voltage
I
Output Voltage (OFF State)
O
Output Voltage (High or Low State)0 to V
O
High or Low Level Output Current (VCC= 3.0 to 3.6V)
High or Low Level Output Current (VCC= 2.7V)
Operating Temperature
op
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
-50mA
-50mA
± 50mA
± 100mA
± 100mA
-65 to +150°C
300°C
2.0 to 3.6V
0 to 5.5V
0 to 5.5V
CC
± 24mA
± 12mA
-55 to 125°C
V
V
3/10
Page 4
74LCX16240
DC SPECIFICATIONS
Test ConditionValue
SymbolParameter
V
V
V
V
I
I
OZ
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
Power Off Leakage
off
Current
High Impedance
Output Leakage
Current
I
CC
∆I
Quiescent Supply
Current
ICCincr. per Input
CC
V
CC
(V)
2.7to3.6
2.7to3.6
2.7
3.0
2.7to3.6
2.7
3.0
2.7to3.6
0
2.7to3.6
2.7to3.6
2.7to3.6
-40to85°C-55to125°C
Min.Max.Min.Max.
2.02.0V
0.80.8V
IO=-100 µAVCC-0.2VCC-0.2
=-12 mA
I
O
I
=-18 mA
O
=-24 mA
I
O
IO=100 µA
I
=12 mA
O
I
=16 mA
O
=24 mA
I
O
V
= 0 to 5.5V
I
or VO=5.5V
V
I
I=VIH
or V
V
VO= 0 to V
VI=VCCor GND
or VO= 3.6 to 5.5V
V
I
VIH=VCC-0.6V
IL
CC
2.22.2
2.42.4
2.22.2
0.20.2
0.40.4
0.40.4
0.550.55
± 5± 5µA
1010µA
± 5± 5µA
2020
± 20± 20
500500µA
Unit
V
V
µA
DYNAMIC SWITCHING CHARA CTERISTICS
Test ConditionValue
=25°C
SymbolParameter
V
CC
(V)
V
OLP
V
OLV
1) Number ofoutputsdefinedas "n".Measured with "n-1"outputsswitching fromHIGH to LOW orLOW to HIGH. Theremaining outputis
measured in the LOW state.
Dynamic Low Level Quiet
Output (note 1)
3.3
=50pF
C
L
V
=0V,VIH= 3.3V
IL
4/10
T
A
Min.Typ.Max.
0.8
-0.8
Unit
V
Page 5
AC ELECTRICAL C HARACTERISTICS
74LCX16240
Test ConditionValue
SymbolParameter
V
CC
(V)
t
PLHtPHL
t
PZLtPZH
Propagation Delay
Time
Output Enable Time2.7
2.7
3.0 to 3.61.54.51.54.5
3.0 to 3.61.55.41.55.4
t
PLZtPHZ
Output Disable Time2.7
3.0 to 3.61.55.31.55.3
t
OSLH
t
OSHL
1) Skew isdefined astheabsolute value ofthe difference between the actual propagation delay for any twooutputs ofthe same device switching in the same direction, either HIGH or LOW (t
2) Parameter guaranteed by design
Output To Output
Skew Time (note1,
2)
3.0 to 3.6505002.51.01.0ns
OSLH
C
L
(pF)
505002.5
505002.5
505002.5
=|t
PLHm-tPLHn
R
(Ω)
|, t
L
OSHL
t
s
(ns)
= t
=|t
-40 to 85 °C-55 to 125 °C
r
Min.Max.Min.Max.
1.55.31.55.3
1.56.01.56.0
1.55.41.55.4
PHLm-tPHLn
|)
Unit
ns
ns
ns
CAPACITIVE CHARACTERISTICS
Test ConditionValue
=25°C
SymbolParameter
V
CC
(V)
C
C
OUT
C
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
circuit)
Input Capacitance
IN
Output Capacitance
Power Dissipation Capacitance
PD
(note 1)
3.3
3.3
VIN= 0 to V
VIN= 0 to V
3.3fIN= 10MHz
V
= 0 or V
IN
CC
CC
CC
T
A
Min.Typ.Max.
7pF
15pF
60
CC(opr)=CPDxVCCxfIN+ICC
Unit
pF
/16 (per
5/10
Page 6
74LCX16240
TEST CIRCUIT
TESTSWITCH
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL= 50 pF or equivalent (includes jig and probe capacitance)
=R1=500Ω or equivalent
R
L
R
T=ZOUT
of pulse generator (typically 50Ω)
Open
6V
GND
WAVEFORM 1 : PROPAGATION DEL AYS (f=1MHz; 50% duty cycle)
6/10
Page 7
WAVEFORM 2 : OUTPUT ENABL E AND DISABLE TIME (f=1MHz; 50% duty cycle)
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