December 1990 2
Philips Semiconductors Product specification
8-bit addressable latch 74HC/HCT259
FEATURES
• Combines demultiplexer and 8-bit latch
• Serial-to-parallel capability
• Output from each storage bit available
• Random (addressable) data entry
• Easily expandable
• Common reset input
• Useful as a 3-to-8 active HIGH decoder
• Output capability: standard
• ICC category: MSI
GENERAL DESCRIPTION
The 74HC/HCT259 are high-speed Si-gate CMOS devices 
and are pin compatible with low power Schottky TTL 
(LSTTL). They are specified in compliance with JEDEC 
standard no. 7A.
The 74HC/HCT259 are high-speed 8-bit addressable 
latches designed for general purpose storage applications 
in digital systems. The “259” are multifunctional devices
capable of storing single-line data in eight addressable 
latches, and also 3-to-8 decoder and demultiplexer, with 
active HIGH outputs (Q
0
 to Q7), functions are available.
The “259” also incorporates an active LOW common reset 
(MR) for resetting all latches, as well as, an active LOW 
enable input (LE).
The “259” has four modes of operation as shown in the 
mode select table. In the addressable latch mode, data on 
the data line (D) is written into the addressed latch. The 
addressed latch will follow the data input with all 
non-addressed latches remaining in their previous states. 
In the memory mode, all latches remain in their previous 
states and are unaffected by the data or address inputs.
In the 3-to-8 decoding or demultiplexing mode, the 
addressed output follows the state of the D input with all 
other outputs in the LOW state. In the reset mode all 
outputs are LOW and unaffected by the address (A0 to A2) 
and data (D) input. When operating the “259” as an 
addressable latch, changing more than one bit of address 
could impose a transient-wrong address. Therefore, this 
should only be done while in the memory mode. The mode 
select table summarizes the operations of the “259”.
QUICK REFERENCE DATA
GND = 0 V; T
amb
=25°C; tr=tf= 6 ns
Notes
1. C
PD
 is used to determine the dynamic power dissipation (PD in µW):
PD=CPD× V
CC
2
× fi+ ∑ (CL× V
CC
2
 × fo) where: 
fi= input frequency in MHz 
fo= output frequency in MHz 
∑ (CL× V
CC
2
× fo) = sum of outputs 
CL= output load capacitance in pF 
VCC= supply voltage in V
2. For HC the condition is VI= GND to V
CC
For HCT the condition is VI= GND to VCC− 1.5 V
SYMBOL PARAMETER CONDITIONS
TYPICAL
UNIT
HC HCT
t
PHL/ tPLH
propagation delay CL= 15 pF; VCC=5 V
D to Q
n
18 20 ns
A
n
, LE to Q
n
17 20 ns
t
PHL
MR to Q
n
15 20 ns
C
I
input capacitance 3.5 3.5 pF
C
PD
power dissipation capacitance per latch notes 1 and 2 19 19 pF