Datasheet 74HCT1G32GW, 74HC1G32GW Datasheet (Philips)

INTEGRATED CIRCUITS

74HC1G32
74HCT1G32

2-input OR gate

Product specification
File under Integrated Circuits, IC06

1997 Dec 16

Philips Semiconductors Product specification

2-input OR gate

FEATURES

• Wide operating voltage :

2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Very small 5 pins package

• Output capability : standard

DESCRIPTION

The 74HC1G/HCT1G32 is a
highspeed Si-gate CMOS device.

The 74HC1G/HCT1G32 provides the
2-input OR function. The standard
output currents are1⁄2 compared to
the 74HC/HCT32.

FUNCTION TABLE

INPUTS OUTPUT

inA inB outY

L L L

L H H
H L H
H H H

H = HIGH voltage level
L = LOW voltage level

74HC1G32

74HCT1G32

QUICK REFERENCE DATA

GND = 0 V; T

SYMBOL PARAMETER CONDITIONS

t

/ t

PHL

PLH

C

I

C

PD

Notes

1. CPDis used to determine the dynamic power dissipation (PDin µW).
PD= CPD× V
fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in V;
∑ (CL× V

2. For HC1G the condition is VI= GND to V
For HCT1G the condition is VI= GND to VCC − 1.5 V.

PIN DESCRIPTION

PIN NO. SYMBOL NAME AND FUNCTION

1, 2 inB, inA data inputs
3 GND ground (0 V)
4 outY data output
5 V

= 25 °C; tr= tf≤ 6.0 ns

amb

propagation
delay

inA, inB to outY
input

capacitance
power

dissipation
capacitance

2

× fi+ ∑ (CL× V

CC

2

× fo) = sum of outputs.

CC

CL= 15 pF
VCC = 5 V

notes 1 and 2

2

× fo) where:

CC

CC

TYPICAL

HC1G HCT1G

8 10 ns

1.5 1.5 pF

19 20 pF

CC.

positive supply voltage

UNIT

1997 Dec 16 2

Philips Semiconductors Product specification

Fig.1 Pin configuration.

1
2
3

inA

inB

GND

V

CC

outY

5

4

32

Fig.2 Logic symbol.

inA

inB

outY

1

2

4

Fig.3 IEC logic symbol.

1

2

4

>

1

Fig.4 Logic diagram.

inA

inB

outY

2-input OR gate

74HC1G32

74HCT1G32

ORDERING AND PACKAGE INFORMATION

OUTSIDE

NORTH

AMERICA

74HC1G32GW
74HCT1G32GW 5 SC88A plastic SOT353 TG

NORTH

AMERICA

TEMPERATURE

RANGE

−40 °C to +125 °C

PINS PACKAGE MATERIAL CODE MARKING

5 SC88A plastic SOT353 HG

PACKAGES

1997 Dec 16 3

Philips Semiconductors Product specification

2-input OR gate

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER

V

CC

V

I

V

O

T

amb

DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient

temperature range −40 25 +125 −40 25 +125 °C

input rise and fall times

tr,t

f

except for
Schmitt-trigger inputs

ABSOLUTE MAXIMUM RATINGS

Limiting values is accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V)

74HC1G 74HCT1G

MIN. TYP. MAX. MIN. TYP. MAX.

CC
CC

0 − V
0 − V

CC
CC

− − 1000 − − −

− − 500 − − 500 VCC = 4.5 V

− − 400 − − − VCC = 6.0 V

74HC1G32

74HCT1G32

UNIT CONDIITIONS

V
V

see DC and AC
characteristics per
device

VCC = 2.0 V

ns

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

±I

IK

±I

OK

±I

O

±I

CC

T

stg

P

D

DC supply voltage −0.5 +7.0 V
DC input diode current VI< - 0.5 or VI> VCC + 0.5 V − 20 mA
DCoutput diode current VO< - 0.5 or VO> VCC + 0.5 V − 20 mA
DC output source or sink

current standard outputs
DC VCC or GND current for

types with standard outputs

− 0.5V < VO< VCC+ 0.5 V − 12.5 mA

− 25 mA

storage temperature range −65 +150 °C
power dissipation per package for temperature range: − 40 to + 125 °C

5 pins plastic SC88A above +55 °C derate linearly with 2.5 mW/K

− 200 mW

Notes

1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.

2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

1997 Dec 16 4

Philips Semiconductors Product specification

2-input OR gate

DC CHARACTERISTICS FOR THE 74HC1G

Over recommended operating conditions.
Voltage are referenced to GND (ground = 0 V)

SYMBOL PARAMETER

MIN. TYP.

1.5 1.2 − 1.5 −

V

V

V

V

V

V

I

CC

HIGH level input voltage

IH

3.15 2.4 − 3.15 − 4.5

4.2 3.2 − 4.2 − 6.0

− 0.8 0.5 − 0.5

LOW level input voltage

IL

− 2.1 1.35 − 1.35 4.5

− 2.8 1.8 − 1.8 6.0

1.9 2.0 − 1.9 −

HIGH level output

OH

voltage; all outputs

4.4 4.5 − 4.4 − 4.5

5.9 6.0 − 5.9 − 6.0

HIGH level output
voltage; standard

OH

outputs

4.13 4.32 − 3.7 −

5.63 5.81 − 5.2 − 6.0

− 0 0.1 − 0.1

LOW level output

OL

voltage; all outputs

− 0 0.1 − 0.1 4.5

− 0 0.1 − 0.1 6.0

LOW level output
voltage; standard

OL

outputs

I

input leakage current − − 1.0 − 1.0 µA 6.0 VI = VCCor GND

I

Quiescent supply
current

− 0.15 0.33 − 0.4

− 0.16 0.33 − 0.4 6.0

− − 10 − 20 µA 6.0

T

(°C)

amb

−40 to +85 −40 to +125

(1)

MAX. MIN. MAX.

UNIT

V

V

V

V

V

V

74HC1G32

74HCT1G32

TEST CONDITIONS

VCC (V) OTHER

2.0

2.0

2.0
VI= VIHor VIL,

−IO = 20 µA
VI= VIHor VIL,

4.5

−IO = 2.0 mA
VI= VIHor VIL,

−IO = 2.6 mA

2.0
VI= VIHor VIL,

IO = 20 µA
VI= VIHor VIL,

4.5
IO = 2.0 mA

VI= VIHor VIL,
IO = 2.6 mA

VI = VCC or GND,
IO = 0

Note

1. All typical values are measured at T

= 25 °C.

amb

1997 Dec 16 5

Philips Semiconductors Product specification

2-input OR gate

DC CHARACTERISTICS FOR THE 74HCT1G

Over recommended operating conditions.
Voltage are referenced to GND (ground = 0 V.)

SYMBOL PARAMETER

V

V

V

OH

HIGH level input

IH

voltage
LOW level input

IL

voltage
HIGH level output

voltage; all outputs
HIGH level output

V

OH

voltage; standard
outputs

V

LOW level output

OL

voltage; all outputs
LOW level output

V

voltage; standard

OL

outputs

∆I

I

I

CC

input leakage current − − 1.0 − 1.0 µA 5.5 VI = VCCor GND

I

Quiescent supply
current

Additional supply

CC

current per input

−40 to +85 −40 to +125

MIN. TYP.

2.0 1.6 − 2.0 − V 4.5 to 5.5

− 1.2 0.8 − 0.8 V 4.5 to 5.5

4.4 4.5 − 4.4 − V 4.5

4.13 4.32 − 3.7 − V 4.5

− 0 0.1 − 0.1 V 4.5

− 0.15 0.33 − 0.4 V 4.5

− − 10.0 − 20 µA 5.5

− − 500 − 850 µA 4.5 to 5.5

T

(°C)

amb

(1)

MAX. MIN. MAX.

74HC1G32

74HCT1G32

TEST CONDITIONS

UNIT

VCC (V) OTHER

VI= VIHor VIL,

−IO = 20 µA
VI= VIHor VIL,

−IO = 2.0 mA
VI= VIHor VIL,

IO = 20 µA
VI= VIHor VIL,

IO = 2.0 mA

VI = VCC or GND,
IO = 0

VI = VCC− 2.1,
IO = 0

Note

1. All typical values are measured at T

= 25 °C.

amb

1997 Dec 16 6

Philips Semiconductors Product specification

2-input OR gate

AC CHARACTERISTICS FOR 74HC1G32

GND = 0 V; tr= tf≤ 6.0 ns; CL = 50 pF

SYMBOL PARAMETER

t

PHL/tPLH

propagation delay
inA, inB to outY

Note

1. All typical values are measured at T

AC CHARACTERISTICS FOR 74HCT1G32

GND = 0 V; tr= tf≤ 6.0 ns; CL = 50 pF

SYMBOL PARAMETER

t

PHL/tPLH

propagation delay
inA, inB to outY

−40 to +85 −40 to +125

MIN. TYP.

− 18 115 − 135

− 7 20 − 23 6.0

amb

MIN. TYP.

− 10 24 − 27 ns 4.5 see Fig.5 and Fig.6

T

(°C)

amb

(1)

MAX. MIN. MAX.

= 25 °C.

T

(°C)

amb

−40 to +85 −40 to +125

(1)

MAX. MIN. MAX.

UNIT

ns

UNIT

74HC1G32

74HCT1G32

TEST CONDITIONS

VCC (V) WAVEFORMS

2.0
see Fig.5 and Fig.6− 8 23 − 27 4.5

TEST CONDITIONS

VCC(V) WAVEFORMS

Note

1. All typical values are measured at T

= 25 °C.

amb

1997 Dec 16 7

Philips Semiconductors Product specification

Fig.5 The input (inA, inB) to output (outY)

propagation delays.

VM(1)

inA, inB INPUT

outY OUTPUT

VM(1)

t

PLH

t

PHL

Fig.6 Load circuitry for switching times.

2-input OR gate

AC WAVEFORMS

74HC1G32

74HCT1G32

1997 Dec 16 8

Philips Semiconductors Product specification

2-input OR gate

PACKAGE OUTLINES

74HC1G32

74HCT1G32

1997 Dec 16 9

Philips Semiconductors Product specification

2-input OR gate

74HC1G32

74HCT1G32

SOLDERING
Introduction

There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and
surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for
surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often
used.

This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook” (order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SO packages.
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the

printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between

50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.
Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.

Wave soldering

Wave soldering techniques can be used for all SO packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique
should be used.

• The longitudinal axis of the package footprint must be parallel to the solder flow.

• The package footprint must incorporate solder thieves at the downstream end.

During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.

Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally- opposite end leads. Use only a low voltage soldering iron (less
than 24 V) applied to the flat part of the lead. Contact time must be limited to 10seconds at up to 300 °C. When using a
dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

1997 Dec 16 10

Philips Semiconductors Product specification

2-input OR gate

74HC1G32

74HCT1G32

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Dec 16 11

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SCA55

Printed in The Netherlands budgetnum/printrun/ed/pp12 Date of release: 1997 Dec 16 Document order number: 9397 nnn nnnnn