Datasheet 74HCT1G14GW, 74HC1G14GW Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

74HC1G14; 74HCT1G14

Inverting Schmitt-trigger

Product specification
File under Integrated Circuits, IC06

1998 Aug 05

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

FEATURES

• Wide operating voltage range:

2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Very small 5 pins package

• Applications

– Wave and pulse shapers
– Astable multivibrators
– Monostable multivibrators

• Output capability: standard.

DESCRIPTION

The 74HC1G/HCT1G14 is a
high-speed Si-gate CMOS device.

The 74HC1G/HCT1G14 provides the
inverting buffer function with
Schmitt-trigger action. These devices
are capable of transforming slowly
changing input signals into sharply
defined, jitter-free output signals.

1

The standard output currents are

⁄

2

compared to the 74HC/HCT14.

FUNCTION TABLE

See note 1.

INPUT

inA

OUTPUT

outY

LH

HL

QUICK REFERENCE DATA

GND = 0 V; T

=25°C; tr=tf= 6.0 ns.

amb

SYMBOL PARAMETER CONDITIONS

t

PHL/tPLH

C

I

propagation
delay inA to outY

input

CL=15pF
VCC=5V

capacitance

C

PD

power

notes 1 and 2 20 22 pF
dissipation
capacitance

Notes

1. C

is used to determine the dynamic power dissipation (PDin µW).

PD

PD=CPD× V

2

× fi+ ∑ (CL× V

CC

2

× fo) where:

CC

fi= input frequency in MHz;
fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in V;
∑ (CL× V

2. For HC1G the condition is VI= GND to V

2

× fo) = sum of outputs.

CC

CC.

For HCT1G the condition is VI= GND to VCC− 1.5 V.

PINNING

PIN SYMBOL DESCRIPTION

1 n.c. not connected
2 inA data input
3 GND ground (0 V)
4 outY data output
5V

CC

DC supply voltage

TYP.

UNIT

HC1G HCT1G

10 15 ns

1.5 1.5 pF

Note

1. H = HIGH voltage level;
L = LOW voltage level.

1998 Aug 05 2

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

ORDERING AND PACKAGE INFORMATION

OUTSIDE NORTH

PACKAGES

AMERICA

74HC1G14GW
74HCT1G14GW 5 SC-88A plastic SOT353 TF

handbook, halfpage

n.c

inA

GND

TEMPERATURE

−40 to +125 °C

1
2

14

3

MNA022

RANGE

V

5

outY

4

CC

PINS PACKAGE MATERIAL CODE MARKING

5 SC-88A plastic SOT353 HF

handbook, halfpage

inA outY

2

4

MNA023

handbook, halfpage

Fig.1 Pin configuration.

24

MNA024

Fig.3 IEC logic symbol.

handbook, halfpage

inA

Fig.2 Logic symbol.

outY

MNA025

Fig.4 Logic diagram.

1998 Aug 05 3

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER

UNIT CONDITIONS

MIN. TYP. MAX. MIN. TYP. MAX.

74HC1G 74HCT1G

V

CC

V

I

V

O

T

amb

DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
input voltage 0 − V
output voltage 0 − V
operating ambient

−40 +25 +125 −40 +25 +125 °C see DC and AC

0 − V

CC

0 − V

CC

CC
CC

temperature range

V
V

characteristics per device

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).

SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

±I

IK

±I

OK

±I

O

DC supply voltage −0.5 +7.0 V
DC input diode current VI<−0.5 or VI> VCC+ 0.5 V; note 1 − 20 mA
DC output diode current VO<−0.5 or VO> VCC+ 0.5 V; note 1 − 20 mA
DC output source or sink

−0.5 V < VO< VCC+ 0.5 V; note 1 − 12.5 mA

current standard outputs

±I

CC

DC VCC or GND current for

note 1 − 25 mA

types with standard outputs

T

stg

P

D

storage temperature range −65 +150 °C
power dissipation per package for temperature range: −40 to +125 °C

5 pins plastic SC-88A above +55 °C derate linearly with

− 200 mW

2.5 mW/K

Note

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

1998 Aug 05 4

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

DC CHARACTERISTICS FOR THE 74HC1G

Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).

T

SYMBOL PARAMETER

V

OH

HIGH-level output
voltage; all outputs

V

OH

HIGH-level output
voltage; standard
outputs

V

OL

LOW-level output
voltage; all outputs

V

OL

LOW-level output
voltage; standard
outputs

I

I

I

CC

input leakage current −− 1.0 − 1.0 µA 6.0 VI=VCCor GND
quiescent supply

current

(°C)

amb

−40 to +85 −40 to +125

MIN. TYP.

(1)

MAX. MIN. MAX.

UNIT

1.9 2.0 − 1.9 − V 2.0 VI=VIHor VIL;

4.4 4.5 − 4.4 − V 4.5

5.9 6.0 − 5.9 − V 6.0

4.13 4.32 − 3.7 − V 4.5 VI=VIHor VIL;

5.63 5.81 − 5.2 − V 6.0 V

− 0 0.1 − 0.1 V 2.0 VI=VIHor VIL;

− 0 0.1 − 0.1 V 4.5

− 0 0.1 − 0.1 V 6.0

− 0.15 0.33 − 0.4 V 4.5 VI=VIHor VIL;

− 0.16 0.33 − 0.4 V 6.0 V

−− 10 − 20 µA 6.0 VI=VCCor GND;

TEST CONDITIONS

VCC (V) OTHER

−IO=20µA

−IO= 2.0 mA

or VIL;

I=VIH

−IO= 2.6 mA

IO=20µA

IO= 2.0 mA

or VIL;

I=VIH

IO= 2.6 mA

IO=0

Note

1. All typical values are measured at T

amb

=25°C.

DC CHARACTERISTICS FOR THE 74HC1G14

Voltages are referenced to GND (ground = 0 V).

SYMBOL PARAMETER

MIN. TYP.

V

T+

positive-going threshold 0.7 1.09 1.5 0.7 1.5 V 2.0 see Figs 5 and 6

1.7 2.36 3.15 1.7 3.15 V 4.5

2.1 3.12 4.2 2.1 4.2 V 6.0

V

T−

negative-going threshold 0.3 0.60 0.9 0.3 0.9 V 2.0 see Figs 5 and 6

0.9 1.53 2.0 0.9 2.0 V 4.5

1.2 2.08 2.6 1.2 2.6 V 6.0

V

H

hysteresis (VT+− VT−) 0.2 0.48 1.0 0.2 1.0 V 2.0 see Figs 5 and 6

0.4 0.83 1.4 0.4 1.4 V 4.5

0.6 1.04 1.6 0.6 1.6 V 6.0

Note

1. All typical values are measured at T

amb

=25°C.

T

(°C)

amb

−40 to +85 −40 to +125

(1)

MAX. MIN. MAX.

TEST CONDITIONS

UNIT

VCC (V) WAVEFORMS

1998 Aug 05 5

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

DC CHARACTERISTICS FOR THE 74HCT1G

Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).

T

SYMBOL PARAMETER

V

OH

HIGH-level output
voltage; all outputs

V

OH

HIGH-level output
voltage; standard
outputs

V

OL

LOW-level output
voltage; all outputs

V

OL

LOW-level output
voltage; standard
outputs

I

I

I

CC

input leakage current −− 1.0 − 1.0 µA 5.5 VI=VCCor GND
quiescent supply

current

∆I

CC

additional supply
current per input

(°C)

amb

−40 to +85 −40 to +125

MIN. TYP.

(1)

MAX. MIN. MAX.

UNIT

4.4 4.5 − 4.4 − V 4.5 VI=VIHor VIL;

4.13 4.32 − 3.7 − V 4.5 VI=VIHor VIL;

− 0 0.1 − 0.1 V 4.5 VI=VIHor VIL;

− 0.15 0.33 − 0.4 V 4.5 VI=VIHor VIL;

−− 10.0 − 20.0 µA 5.5 VI=VCCor GND;

−− 500 − 850 µA 4.5 to 5.5 VI=VCC− 2.1 V;

TEST CONDITIONS

VCC (V) OTHER

−IO=20µA

−IO= 2.0 mA

IO=20µA

IO= 2.0 mA

IO=0

IO=0

Note

1. All typical values are measured at T

amb

=25°C.

DC CHARACTERISTICS FOR THE 74HCT1G14

Voltages are referenced to GND (ground = 0 V).

SYMBOL PARAMETER

−40 to +85 −40 to +125

MIN. TYP.

V

T+

positive-going threshold 1.2 1.55 1.9 1.2 1.9 V 4.5 see Figs 5 and 6

1.4 1.80 2.1 1.4 2.1 V 5.5

V

T−

negative-going threshold 0.5 0.76 1.2 0.5 1.2 V 4.5 see Figs 5 and 6

0.6 0.90 1.4 0.6 1.4 V 5.5

V

H

hysteresis (VT+− VT−) 0.4 0.80 − 0.4 − V 4.5 see Figs 5 and 6

0.4 0.90 − 0.4 − V 5.5

Note

1. All typical values are measured at T

amb

=25°C.

(°C)

T

amb

(1)

MAX. MIN. MAX.

TEST CONDITIONS

UNIT

VCC (V) WAVEFORMS

1998 Aug 05 6

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

AC CHARACTERISTICS FOR 74HC1G14

GND = 0 V; t

SYMBOL PARAMETER

t

PHL/tPLH

Note

1. All typical values are measured at T

AC CHARACTERISTICS FOR 74HCT1G14

GND = 0 V; t

= 6.0 ns; CL=50pF.

r=tf

propagation delay
inA to outY

= 6.0 ns; CL=50pF.

r=tf

T

(°C)

amb

−40 to +85 −40 to +125

MIN. TYP.

(1)

MAX. MIN. MAX.

UNIT

TEST CONDITIONS

VCC (V) WAVEFORMS

− 25 155 − 190 ns 2.0 see Figs 12 and 13

− 12 31 − 38 ns 4.5

− 11 26 − 32 ns 6.0

=25°C.

amb

SYMBOL PARAMETER

MIN. TYP.

t

PHL/tPLH

propagation delay

− 17 43 − 51 ns 4.5 see Figs 12 and 13

inA to outY

Note

1. All typical values are measured at T

T

(°C)

amb

−40 to +85 −40 to +125

(1)

MAX. MIN. MAX.

=25°C.

amb

TEST CONDITIONS

UNIT

VCC(V) WAFEFORMS

1998 Aug 05 7

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

TRANSFER CHARACTERISTIC WAVEFORMS

handbook, halfpage

100

handbook, halfpage

I

CC

(µA)

V

O

V

H

V

T+

V

T−

MNA026

Fig.5 Transfer characteristic.

MNA028

handbook, halfpage

V

V

V

O

T+

I

V

T−

V

MNA027

Fig.6 The definitions of VT+, VT− and VH; where

VT+ and VT− are between limits of 20% and
70%.

1.0

handbook, halfpage

I

CC

(mA)

0.8

MNA029

H

50

0

0 2.0

1.0

VI (V)

Fig.7 Typical HC1G14 transfer characteristics;

VCC= 2.0 V.

1998 Aug 05 8

0.6

0.4

0.2

0

0 5.0

2.5

VI (V)

Fig.8 Typical HC1G14 transfer characteristics;

VCC= 4.5 V.

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

1.6

handbook, halfpage

I

CC

(mA)

0.8

0

0 3.0 6.0

MNA030

VI (V)

Fig.9 Typical HC1G14 transfer characteristics;

VCC= 6.0 V.

2.0

handbook, halfpage

I

CC

(mA)

1.0

0

0 5.0

2.5

MNA031

VI (V)

Fig.10 Typical HCT1G14 transfer characteristics;

VCC= 4.5 V.

3.0

handbook, halfpage

I

CC

(mA)

2.0

1.0

0

0

3.0 6.0

MNA032

VI (V)

Fig.11 Typical HCT1G14 transfer characteristics;

VCC= 5.5 V.

1998 Aug 05 9

handbook, halfpage

inA INPUT

outY OUTPUT

(1) HC1G: VM= 50%; VI= GNDto VCC.

HCT1G: V

= 1.3V; VI= GNDto 3.0 V.

M

(1)

V

M

t

PHL

(1)

V

M

t

PLH

MNA033

Fig.12 The input (inA) to output (outY) propagation

delays.

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

handbook, halfpage

V

PULSE

GENERATOR

Definitions for test circuit:
CL= load capacitance including jig and probe capacitance (See “AC characteristics for 74HC1G14”

and “AC characteristics for 74HCT1G14” for values).

= termination resistance should be equal to the output impedance Zo of the pulse generator.

R

T

I

V

CC

V

D.U.T.

R

T

O

C

L

Fig.13 Load circuitry for switching times.

50 pF

MNA034

1998 Aug 05 10

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

APPLICATION INFORMATION

The slow input rise and fall times cause additional power
dissipation, this can be calculated using the following
formula:

Pad=fi×(tr× I

CCa+tf×ICCa

) × V

CC

Where:

Pad= additional power dissipation (µW)
fi= input frequency (MHz)

tr= input rise time (ns); 10% to 90%

tf= input fall time (ns); 90% to 10%

= average additional supply current (µA).

I

CCa

Average I

differs with positive or negative input

CCa

transitions, as shown in Fig.14 and Fig.15.
HC1G/HCT1G14 used in relaxation oscillator circuit,

see Fig.14 and Fig.16.

Note to the application information:

1. All values given are typical unless otherwise specified.

200

handbook, halfpage

average

I

CC

(µA)

150

positive-going

100

50

negative-going

0

0 2.0 4.0 6.0

Fig.14 Average ICC for HC1G Schmitt-trigger

devices; linear change of VI between

0.1VCCto 0.9VCC.

MNA036

edge

edge

VCC (V)

200

handbook, halfpage

average

I

CC

(µA)

150

100

50

0

0462

positive-going

negative-going

MNA058

edge

edge

V

(V)

CC

Fig.15 Average ICC for HCT1G Schmitt-trigger

devices; linear change of VI between

0.1VCCto 0.9VCC.

1998 Aug 05 11

handbook, halfpage

For HC1G:

For HCT1G:

Fig.16 Relaxation oscillator using the

1

≈=

--­T

1

--­T

1

-----------------------

0.8 RC×

≈=

-------------------------- -

0.67 RC×

f

f

HC1G/HCT1G14.

R

C

MNA035

1

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

PACKAGE OUTLINE

Plastic surface mounted package; 5 leads SOT353

D

y

45

132

e

1

e

b

p

wBM

A

A

1

E

H

E

detail X

Q

L

p

AB

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

A

1.1

0.8

OUTLINE
VERSION

SOT353

max

0.1

1

b

cD

p

0.30

0.20

IEC JEDEC EIAJ

0.25

0.10

2.2

1.8

(2)

E

1.35

1.3

1.15

REFERENCES

e

e

1

0.65

1998 Aug 05 12

H

2.2

2.0

L

Qywv

p

E

0.45

0.15

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28SC-88A

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1998 Aug 05 13

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Aug 05 14

Philips Semiconductors Product specification

Inverting Schmitt-trigger 74HC1G14; 74HCT1G14

NOTES

1998 Aug 05 15

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Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 245106/00/01/pp16 Date of release: 1998 Aug 05 Document order number: 9397750 03652