Datasheet 74HC 10 Datasheet (FREI)

.HIGH SPEED

tPD= 6 ns (TYP.) AT VCC=5V

.LOWPOWER DISSIPATION

ICC=1µA(MAX.) AT TA=25°C

.HIGH NOISEIMMUNITY

V

NIH=VNIL

=28%VCC(MIN.)

.OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

.SYMMETRICAL OUTPUT IMPEDANCE

IOH =IOL= 4 mA(MIN.)

.BALANCEDPROPAGATION DELAYS

t

PLH=tPHL

.WIDE OPERATINGVOLTAGERANGE

VCC(OPR)= 2V TO6 V

.PIN AND FUNCTION COMPATIBLE WITH

54/74LS10

M54HC10
M74HC10

TRIPLE 3-INPUT NAND GATE

B1R

(PlasticPackage)

M1R

(MicroPackage)

ORDER CODES :

M54HC 10F1R M74H C10M1R
M74HC 10B1R M 74HC10C1R

F1R

(CeramicPackage)

C1R

(Chip Carrier)

DESCRIPTION

The M54/74HC10 is a high speed CMOS TRIPLE
3-INPUT NAND GATE fabricated with silicon gate
C2MOS technology.

It has the samehigh speedperformance of LSTTL
combined with true CMOSlowpower consumption.
The internal circuit is composedof 3stages includ­ing buffer output, which enables high noise im­munityand stable output.

All inputs are equipped with protection circuits
against static discharge and transient excess volt­age.

INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN CONNECTIONS(top view)

NC =
No Internal
Connection

December1992

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M54/M74HC10

TRUTH TABLE

ABCY

LXXH
XLXH
XXLH
HHHL

PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 3, 9 1A to 3A Data Inputs

2, 4, 10 1B to 3B Data Inputs

13, 5, 11 1C to 3C Data Inputs

12, 6, 8 1Y to 3Y Data Outputs

7 GND Ground (0V)

14 V

CC

Positive Supply Voltage

SCHEM ATIC CIR CUI T (Per Gate)

IEC LOGIC SYMBOL

ABSOLU TE M AXI MU M R AT INGS

Symbol Parameter Value Unit

V

CC

V

V

O

I

IK

I

OK

I

O

or I

I

CC

P

D

T

stg

T

L

AbsoluteMaximumRatingsarethosevalues beyond whichdamage tothedevice mayoccur. Functionaloperationunder these conditionisnotimplied.
(*)500 mW: ≅ 65oC derate to300 mW by 10mW/oC: 65oCto85oC

2/9

Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V

I

DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA

GND

Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300

o

C

o

C

M54/M74HC10

RECO MM ENDED OPERAT IN G CONDI TI O NS

Symbol Parameter Value Unit

V

V

V

T

t

r,tf

DC SPECIFICATIO NS

Symbol Parameter

V

IH

V

V

OH

V

OL

I

I

CC

Supply Voltage 2 to 6 V

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature: M54HC Series

op

M74HC Series

CC
CC

-55 to +125

-40 to +85

Input Rise and Fall Time VCC= 2 V 0 to 1000 ns

V

= 4.5 V 0 to 500

CC

V

= 6 V 0 to 400

CC

Test Conditions Value

V

(V)

CC

=25oC

T

A

54HC and 74HC

-40 to 85oC
74HC

-55 to 125oC

Min. Typ. Max. Min. Max. Min. Max.

High Level Input
Voltage

2.0 1.5 1.5 1.5

4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

Low Level Input

IL

Voltage

2.0 0.5 0.5 0.5

4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

High Level
Output Voltage

Low Level Output
Voltage

Input Leakage

I

Current
Quiescent Supply

2.0
V

=

I

4.5 4.4 4.5 4.4 4.4

6.0 5.9 6.0 5.9 5.9

4.5 I

6.0 I

2.0

4.5 0.0 0.1 0.1 0.1

6.0 0.0 0.1 0.1 0.1

4.5 I

6.0 I

6.0

IO=-20 µA

V

IH

or

V

IL

=-4.0 mA 4.18 4.31 4.13 4.10

O

=-5.2 mA 5.68 5.8 5.63 5.60

O

V

=

I

IO=20µA

V

IH

or

V

IL

= 4.0 mA 0.17 0.26 0.33 0.40

O

= 5.2 mA 0.18 0.26 0.33 0.40

O

VI=VCCor GND ±0.1 ±1 ±1 µA

1.9 2.0 1.9 1.9

0.0 0.1 0.1 0.1

6.0 VI=VCCor GND 1 10 20 µA

Current

54HC

V
V

o

C

o

C

Unit

V

V

V

V

3/9

M54/M74HC10

AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)

Test Conditions Value

T

=25oC

Symbol Parameter

t
t

TLH
THL

Output Transition
Time

V

CC

(V)

2.0 30 75 95 110

4.5 8151922

A

54HC and 74HC

Min. Typ. Max. Min. Max. Min. Max.

6.0 7131619

t

PLH

t

PHL

Propagation
Delay Time

2.0 27 75 95 110

4.5 9151922

6.0 8131619

C

C

PD

Input Capacitance 5 10 10 10 pF

IN

(*) Power Dissipation

23

Capacitance

(*) CPDisdefined asthe valueof the IC’s internalequivalent capacitance which is calculated from the operating current consumption withoutload.
(Referto TestCircuit).Average operting current can be obtained bythefollowingequation. ICC(opr) = CPD•VCC•fIN+ICC/3(per Gate)

SWITCHING CHARACTERISTICS TEST CIRCUIT

-40 to 85oC
74HC

-55 to 125oC
54HC

Unit

ns

ns

pF

TEST CIRCUIT ICC(Opr.)

INPUTWAVEFORMIS THE SAMEASTHAT INCASE OF SWITCHING CHARACTERISTICS TEST.

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Plastic DIP14 MECHANICAL DATA

M54/M74HC10

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335

e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 2.54 0.050 0.100

mm inch

P001A

5/9

M54/M74HC10

Ceramic DIP14/1 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 20 0.787
B 7.0 0.276
D 3.3 0.130
E 0.38 0.015

e3 15.24 0.600

F 2.29 2.79 0.090 0.110
G 0.4 0.55 0.016 0.022
H 1.17 1.52 0.046 0.060

L 0.22 0.31 0.009 0.012
M 1.52 2.54 0.060 0.100
N 10.3 0.406

P 7.8 8.05 0.307 0.317

Q 5.08 0.200

mm inch

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P053C

SO14 MECHANICAL DATA

M54/M74HC10

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S8°(max.)

mm inch

P013G

7/9

M54/M74HC10

PLCC20 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 9.78 10.03 0.385 0.395

B 8.89 9.04 0.350 0.356

D 4.2 4.57 0.165 0.180
d1 2.54 0.100
d2 0.56 0.022

E 7.37 8.38 0.290 0.330

e 1.27 0.050

e3 5.08 0.200

F 0.38 0.015
G 0.101 0.004
M 1.27 0.050

M1 1.14 0.045

mm inch

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P027A

M54/M74HC10

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is grantedbyimplication or otherwise under any patent or patent rights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife support devices orsystems without express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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