Page 1
74H1G66
SINGLE BILATERAL SWITCH
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 1µA(MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ LOW "ON" RESISTANCE :
R
= 50Ω (TYP.) AT VCC = 9V I
ON
■ SINE WAVE DISTORTION:
= 28% VCC (MIN.)
NIL
0.042% AT V
■ WIDE OPERATING RANGE:
V
(OPR) = 2V TO 12V
CC
= 4ns (TYP.) at VCC = 4.5V
PD
I/O
= 4V f = 1KHz
CC
= 100µA
DESCRIPTION
The 74H1G66 is a CMOS SINGLE BILATERAL
SWITCH fabricated in silicon gate C
2
MOS
technology. It achieves high speed performance
combined with true CMOS low power
consumption.
The C input is provided to cont rol the switch a nd
it’s compatible with standard CMOS output; the
switch is ON (port I/O is connected to Port O/I)
when the C input is held high and OFF (high
SOT23-5L
ORDER CODES
PACKAGE T & R
SOT23-5L 74H1G66STR
impedance state exists between the two ports)
when C is held low.
All inputs and output are equippe d with prot ection
circuits against stati c disc harge , giving t hem ES D
immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/10July 2001
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74H1G66
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1 I/O Independent Input/Output
2 O/I Independent Output/Input
3 GND Ground (0V)
4C
5
V
CC
TRUTH TABLE
C SWITCH FUNCTION
HON
L OFF *
* High Impedance Stat e
ABSOLUTE MAXIMUM RATI N GS
Symbol Parameter Value Unit
V
V
V
I
IOK
I
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
Supply Voltage
CC
DC Input/Output Voltage -0.5 to VCC + 0.5
I/O
DC Control Input Voltage -0.5 to VCC + 0.5
IC
DC Input/Output Diode Current
DC Control Input Diode Current
IK
DC Output Source Sink Current per Output Pin
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
Enable Input (Active
HIGH)
Positive Supply Voltage
-0.5 to +13.0 V
V
V
± 20 mA
± 20 mA
± 25 mA
± 50 mA
500 (*) mW
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
2/10
V
V
V
T
t
r
Supply Voltage
CC
Control Input Voltage 0 to V
I
Input/Output Voltage 0 to V
I/O
Operating Temperature
op
Input Rise and Fall Time on control pin VCC = 2.0V
V
= 4.5V
, t
f
CC
V
CC
V
CC
= 6.0V
= 10.0V
2 to 12 V
CC
CC
-55 to 125 °C
0 to 1000 ns
0 to 500 ns
0 to 400 ns
0 to 250 ns
V
V
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DC SPECIFICATIONS
Symbol Parameter
V
V
R
R
I
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
ON Resistance 4.5 VIC = VIH
ON
ON Resistance 4.5
ON
Input/Output
OFF
Leakage Current
(SWITCH OFF)
Switch Input
I
IZ
Leakage Current
(SWITCH ON,
OUTPUT OPEN)
I
Control Input
IN
Leakage Current
Quiescent Supply
CC
Current
74H1G66
Test Condition Value
T
= 25°C
V
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
9.0 6.3 6.3 6.3
12.0 8.4 8.4 8.4
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
9.0 2.7 2.7 2.7
12.0 3.6 3.6 3.6
96 170 200 250
V
= VCC to GND
I/O
I
12.0 45 80 90 120
12.0 45 70 90 110
≤ 1mA
I/O
= VIH
V
IC
V
= VCC or GND
I/O
I
≤ 1mA
I/O
70 100 130 160
12.0 VOS = VCC to GND
V
= VCC to GND
IS
V
= V
IC
IL
12.0 VOS = VCC to GND
V
= V
IC
IH
6.0 VIC = 5.5V or GND ± 0.1 ± 1.0 ± 1.0 µA
6.0
V
= VCC or GND
I
12.0 8 80 160
-40 to 85°C -55 to 125°C
Unit
±0.1 ± 1 ± 2 µA
±0.1 ± 1 ± 2 µA
11020
V
V
Ω9.0 55 85 100 150
Ω9.0 50 75 95 115
µA9.0 4 40 80
3/10
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74H1G66
AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)
Test Condition Value
T
Symbol Parameter
Φ
Phase Difference
I/O
Between Input and
Output
PLZ
PHZ
PZL
PZH
Output Disable
Time
Output Enable
Time
t
t
t
t
Maximum Control
Input Frequency
V
CC
(V)
2.0 10 50 65 75
4.5 4101518
9.0 3 8 13 16
12.0 3 7 10 12
2.0
4.5 8202530
9.0 6122227
= 500 Ω
R
L
12.0 6 12 18 25
2.0
4.5 10 23 29 35
9.0 8202530
= 1 KΩ
R
L
12.0 8 18 22 27
2.0
4.5 30
9.0 30
12.0 30
R
C
V
O
= 1 KΩ
L
= 15pF
L
= 1/2V
CC
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
18 100 125 150
20 115 145 175
30
-40 to 85°C -55 to 125°C
Unit
ns
ns
ns
MHz
CAPACITIVE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
C
C
Input Capacitance
IN
Switch Terminal
I/O
Capacitance
Feed through
IOS
Capacitance
Power Dissipation
PD
Capacitance
5101010pF
10 pF
0.5 pF
15 pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circ ui t). Averag e operating current can be obtained by t he following equation. I
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + I
CC(opr)
CC
Unit
4/10
Page 5
ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C)
Test Condition Value
Symbol Parameter
Sine Wave
Distortion (THD)
f
MAX
Frequency
Response
(Switch ON)
Feed through
Attenuation
(Switch OFF)
Crosstalk (Control
Input to Signal
Output)
V
V
IN
CC
(V
(V)
4.5 4
9.0 8 0.04
p-p
)
= 1 KHz RL = 10 KΩ, CL = 50 pF
f
IN
4.5 Adjust fIN voltage to obtain 0 dBm at VOS.
9.0 180
Increase f
4.5 V
Adjust f
R
L
4.5 R
= 600Ω, CL = 50 pF, fIN = 1KHz square wave
L
9.0 60
Frequency until dB meter reads -3dB
IN
R
= 50Ω, CL = 10 pF
L
is centered at VCC/2
IN
Voltage to obtained 0dBm at VIS
IN
= 600Ω, CL = 50 pF, fIN = 1KHz sine wave
t
= tf = 6ns
r
74H1G66
Unit
Typ.
0.04
150
-60
%
MHz
dB9.0 -60
60
mV
5/10
Page 6
74H1G66
SWITCHING CARACTERISTICS TEST CIRCUIT
CROSSTALK (control to output BANDWIDTH AND FEEDTHROUGH ATTENUATION
6/10
MAXIMUM CONTROL FREQUENCY
Page 7
74H1G66
CHANNEL RESISTANCE (R
ICC (Opr.)
ON)
7/10
Page 8
74H1G66
SOT23-5L MECHANICAL DATA
mm. mils
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.35 0.50 13.7 19.7
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
e0.95 37.4
e1 1.9 74.8
L 0.35 0.55 13.7 21.6
8/10
Page 9
Tape & Reel SOT23-xL MECHANICAL DATA
74H1G66
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362
T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161
P 3.9 4.0 4.1 0.153 0.157 0.161
mm. inch
9/10
Page 10
74H1G66
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No li cense is granted by implication or otherwise unde r any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information
previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or
systems without express written approval of STMicroelectronics.
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