The ACT20 is an advanced high-speed CMOS
DUAL 4-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for low
powerapplicationsmantaininghighspeed
74ACT20
DUAL 4-INPUT NAND GATE
PRELIMINARY DATA
B
(Plastic Package)
(Micro Package)
ORDERCODES:
74ACT20B74ACT20M
operation similar to equivalent Bipolar Schottky
TTL.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunityand stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOSoutput voltagelevels.
All inputs and outputs are equipped with
protectioncircuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
M
PINCONNECTION ANDIEC LOGICSYMBOLS
May 1997
1/7
Page 2
74ACT20
INPUTAND OUTPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N NoSYM B O LNAME AN D FUNCT I ON
1, 91A to 2AData Inputs
2, 101B to 2BData Inputs
3, 111C to 2CData Inputs
5, 131D to 2DData Inputs
6, 81Y to 2YData Outputs
7GNDGround (0V)
14V
CC
Positive Supply Voltage
TRUTHTABLE
ABCCY
LXXXH
XLXXH
XXLXH
XXXLH
HHHHL
ABSOLUTE MAXIMUMRATINGS
Symb o lParame t erVal u eUni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
Supply Voltage-0.5 to +7V
CC
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
O
DC Input Diode Current± 20mA
IK
DC Output Diode Current± 20mA
DC Output Current± 50mA
O
DC VCCor Ground Current± 100mA
GND
Storage Temperature-65 to +150
stg
Lead Temperature (10 sec)300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
SymbolParameterValu eUnit
V
V
V
T
dt/dvInput Rise and Fall Time V
1) VINfrom0.8Vto 2.0 V
2/7
Supply Voltage4.5 to 5.5V
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature:-40to +85
op
= 4.5 to 5.5V (note 1)8ns/V
CC
CC
CC
V
V
o
C
Page 3
DC SPECIFICATIONS
74ACT20
SymbolParameterTest Condition sValueUnit
=25oC-40to85
V
CC
(V)
High Level Input Voltage4.5VO= 0.1 V or
V
IH
5.52.01.52.0
Low Level Input Voltage4.5VO= 0.1 V or
V
IL
5.51.50.80.8
High Level Output
V
OH
Voltage
4.5
5.5I
4.5I
5.5I
Low Level Output
V
OL
Voltage
4.5
5.5I
4.5I
5.5I
Input Leakage Current
I
I
Max ICC/Input5.5VI=VCC-2.1 V0.61.5mA
I
CCT
Quiescent Supply
I
CC
5.5
5.5VI=VCCor GND440µA
V
- 0.1 V
CC
- 0.1 V
V
CC
IO=-50 µA4.44.494.4
(*)
=
V
I
V
IH
V
IL
(*)
V
I
V
IH
V
IL
=-50 µA5.45.495.4
O
or
=-24 mA3.863.76
O
=-24 mA4.864.76
O
IO=50 µA0.0010.10.1
=
=50 mA0.0010.10.1
O
or
=24 mA0.360.44
O
=24 mA0.360.44
O
VI=VCCor GND±0.1±1µA
T
A
Min.Typ. Max. Min . Max.
2.01.52.0
1.50.80.8
o
C
Current
Dynamic Output Current
I
OLD
OHD
(note 1, 2)
I
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω.
(*)All outputs loaded.
5.5V
= 1.65 Vmax75mA
OLD
V
= 3.85 V min-75mA
OHD
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Inputtr=tf=3ns)
SymbolParameterTest Cond itionValueUnit
t
Propagation Delay Time5.0
PLH
t
PHL
(*) Voltage rangeis5V±0.5V
V
(V)
CC
(*)
=25oC-40to85
T
A
Min.Typ. Max. Min . Max.
1.56.59.01.09.5ns
o
C
CAPACITIVE CHARACTERISTICS
SymbolParameterTest Condition sValueUnit
=25oC-40to85
T
A
Min.Typ. Max. Min . Max.
4.5
Input Capacitance
C
IN
Power Dissipation
C
PD
V
CC
(V)
5.0
5.025pF
Capacitance (note 1)
1) CPDis defined as the value of the IC’s internalequivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. I
(opr) =CPD• VCC• fIN+ICC/n (per circuit)
CC
o
C
pF
3/7
Page 4
74ACT20
TEST CIRCUIT
CL= 50 pF or equivalent (includes jig and probe capacitance)
Information furnished is believed to be accurateand reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use ofsuch informationnor for any infringement of patentsor other rights of third parties whichmay resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent orpatentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviouslysupplied.
SGS-THOMSONMicroelectronics productsarenotauthorized for useas criticalcomponents in life supportdevices orsystems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics - Printed in Italy- All Rights Reserved
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