Page 1
QUAD 2 CHANNEL MULTIPLEXER (INV.)
■ HIGH SPEED:t
■ LOWPOWERDISSIPATION:
=8µA (MAX.)at TA=25oC
I
CC
■ COMPATIBLEWITH T TLOUTPUTS
V
=2V(MIN),VIL= 0.8V (MAX)
IH
■ 50Ω TRANSMISSIONLINE DRIVING
CAPABILITY
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=24mA(MIN)
OH
■ BALANCED PROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5V to 5.5V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
74SERIES158
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The ACT158 is an high-speed CMOS QUAD
2-CHANNEL MULTIPLEXER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for low
power applications maintaining high speed
operation similar to equivalent Bipolar Schottky
TTL.
It consists of four 2-input digital multiplexers with
=4 ns(TYP.)atVCC=5V
PD
74ACT158
PRELIMINARY DATA
B
(Plastic Package)
(Micro Package)
ORDERCODES:
74ACT158B 74ACT158M
common select and strobe inputs. It is an
inverting multiplexer. When the STROBE input is
held High selection of data is inhibit and all the
outputs become high. The SELECT decoding
determines whether the A or B inputs get routed
to theircorresponding Y outputs.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOSoutput voltagelevels.
All inputs and outputs are equipped with
protectioncircuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
M
PINCONNECTION ANDIEC LOGICSYMBOLS
May 1997
1/8
Page 2
74ACT158
INPUTAND OUTPUT EQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM B O L NAME AND F UNCTION
1 SELECT Common Data Select Input
2,5,11,14 1Ato4A Data Inputs From
Source A
3,6,10,13 1Bto4B Data Inputs From
Source B
4,7,9,12 1Yto4Y Multiplexer Outputs
15 STROBE Strobe Input
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
TRUTH TABLE
INPUT OUTPUT
ST RO B E SEL ECT A B Y
HXXXH
LLLXH
LLHXL
LHXLH
LHXHL
X:”H”or ”L”
ABSOLUTE MAXIMUM RATING
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which d amage to the device may occur. Functional operation under these condition isnot implied.
Supply Voltage -0.5to+7 V
CC
DC Input Voltage -0.5toVCC+0.5 V
I
DC Output Voltage -0.5toVCC+0.5 V
O
DC Input Diode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 200 mA
GND
Storage Temperature -65to+150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symbol Parameter Valu e Unit
V
V
V
T
dt/dv Input Rise and Fall Time V
1) VINfrom0.8Vto2.0V
Supply Voltage 4.5to5.5 V
CC
Input Voltage 0toV
I
Output Voltage 0toV
O
Operating Temperature: -40to+85
op
= 4.5 to 5.5V (note 1) 8 ns/V
CC
CC
CC
V
V
o
C
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Page 3
DC SPECIFICATIONS
74ACT158
Symbol Parameter Test Condition s Value Unit
=25oC-40to85
V
CC
(V)
High Level Input Voltage 4.5 VO=0.1V or
V
IH
5.5 2.0 1.5 2.0
Low Level Input Voltage 4.5 VO=0.1V or
V
IL
5.5 1.5 0.8 0.8
High Level Output
V
OH
Voltage
4.5
5.5 I
4.5 I
5.5 I
Low Level Output
V
OL
Voltage
4.5
5.5 I
4.5 I
5.5 I
Input Leakage Current
I
I
Max ICC/Input 5.5 VI=VCC-2.1V 0.6 1.5 mA
I
CCT
Quiescent Supply
I
CC
5.5
5.5 VI=VCCorGND 8 80 µA
V
-0.1V
CC
-0.1V
V
CC
IO=-50µA 4.4 4.49 4.4
(*)
=
V
I
or
V
IH
V
IL
(*)
V
I
V
or
IH
V
IL
=-50µA 5.4 5.49 5.4
O
=-24 mA 3.86 3.76
O
=-24 mA 4.86 4.76
O
IO=50µA0.0010.1 0.1
=
=50 mA 0.001 0.1 0.1
O
=24mA 0.36 0.44
O
=24mA 0.36 0.44
O
VI=VCCorGND ±0.1 ±1 µA
T
A
Min. Typ. Max. Min. Max.
2.0 1.5 2.0
1.5 0.8 0.8
o
C
Current
Dynamic Output Current
I
OLD
(note 1, 2)
I
OHD
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching isguaranteed on transmission lines with impedances as low as 50 Ω.
(*)All outputs loaded.
5.5 V
=1.65 Vmax 75 mA
OLD
V
=3.85Vmin -75 mA
OHD
V
V
V
V
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Page 4
74ACT158
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, RL=500 Ω, Inputtr=tf=3ns)
L
Symbol Parameter Test Cond ition Value Unit
o
C
t
Propagation Delay Time
PLH
t
SELECT to Y
PHL
Propagation Delay Time
t
PLH
t
STROBE to Y
PHL
Propagation Delay Time
t
PLH
t
A, B to Y
PHL
(*)Voltage range is 5V± 0.5V
V
(V)
5.0
5.0
5.0
CC
=25oC-40to85
T
A
Min. Typ. Max. Min. Max.
(*)
(*)
(*)
1.5 5.5 9.0 1.0 10.0 ns
1.5 5.5 9.5 1.0 10.5 ns
1.54.07.51.08.5 ns
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Condition s Value Unit
=25oC-40to85
T
A
Min. Typ. Max. Min. Max.
4
Input Capacitance
C
IN
Power Dissipation
C
PD
V
CC
(V)
5.0
5.0 TBD pF
Capacitance (note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. I
(opr) = CPD• VCC• fIN+ICC/n (per circuit)
CC
o
C
pF
TEST CIRCUIT
4/8
Page 5
WAVEFORM 1: PROPAGATIONDELAYS FORNON-INVERTING CONDITIONS
74ACT158
WAVEFORM 2: PROPAGATIONDELAYS FORINVERTINGCONDITIONS
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Page 6
74ACT158
Plastic DIP-16 (0.25) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.77 1.65 0.030 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 17.78 0.700
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 0.050
mm inch
6/8
P001C
Page 7
SO-16 MECHANICAL DATA
74ACT158
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.004 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45 (typ.)
D 9.8 10 0.385 0.393
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.62 0.024
S 8 (max.)
mm inch
P013H
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Page 8
74ACT158
Information furnished is believed to be accurateand reliable. However,SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use ofsuch informationnor for any infringement of patentsor otherrights of third parties whichmay resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent or patent rights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronicsproducts arenotauthorized for useascriticalcomponents inlife supportdevicesor systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics - Printedin Italy - AllRights Reserved
Australia- Brazil - Canada - China - France- Germany- HongKong - Italy- Japan- Korea- Malaysia- Malta- Morocco- The Netherlands -
Singapore- Spain- Sweden- Switzerland- Taiwan -Thailand -United Kingdom- U.S.A
SGS-THOMSONMicroelectronics GROUPOF COMPANIES
.
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