Page 1
74ACT08
QUAD 2-INPUT AND GATE
■ HIGH SPEED: t
■ LOWPOWERDISSIPATION:
=4µA (MAX.)at TA=25oC
I
CC
■ COMPATIBLEWITH TTL OUTPUTS
V
=2V(MIN),VIL= 0.8V (MAX)
IH
■ 50Ω TRANSMISSIONLINE DRIVING
=5 ns (TYP.)atVCC=5V
PD
CAPABILITY
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=24mA(MIN)
OH
■ BALANCED PROPAGATIONDELAYS:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERANGE:
V
(OPR)= 4.5V to 5.5V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
74SERIES08
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The ACT00 is an advanced high-speed CMOS
QUAD 2-INPUT AND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology. It is ideal for low
power applications mantaining high speed
B
(Plastic Package)
(Micro Package)
M
ORDERCODES:
74ACT08B 74ACT08M
operation similar to equivalent Bipolar Schottky
TTL.
The internal circuit is composed of 2 stages
including buffer output, which enables high noise
immunityand stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOSoutput voltage levels.
All inputs and outputs are equipped with
protectioncircuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PINCONNECTION AND IEC LOGIC SYMBOLS
April 1997
1/7
Page 2
74ACT08
INPUTAND OUTPUTEQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM B O L NAME AN D FUNCT I ON
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTHTABLE
ABY
LLL
LHL
HLL
HHH
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
Supply Voltage -0.5 to +7 V
CC
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 200 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symbol Parameter Valu e Unit
V
V
V
T
dt/dv Input Rise and Fall Time V
1) VINfrom0.8Vto2.0V
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: -40to +85
op
= 4.5 to 5.5V (note 1) 8 ns/V
CC
CC
CC
V
V
o
C
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DC SPECIFICATIONS
74ACT08
Symbol Parameter Test Condit ions Value Unit
T
V
CC
(V)
High Level Input Voltage 4.5 VO= 0.1 V or
V
IH
5.5 2.0 1.5 2.0
Low Level Input Voltage 4.5 VO= 0.1 V or
V
IL
5.5 1.5 0.8 0.8
High Level Output
V
OH
Voltage
4.5
5.5 I
4.5 I
5.5 I
Low Level Output
V
OL
Voltage
4.5
5.5 I
4.5 I
5.5 I
Input Leakage Current
I
I
Max ICC/Input 5.5 VI=VCC-2.1 V 0.6 1.5 mA
I
CCT
Quiescent Supply
I
CC
5.5
5.5 VI=VCCor GND 4 40 µA
V
- 0.1 V
CC
- 0.1 V
V
CC
IO=-50 µA 4.4 4.49 4.4
(*)
=
V
I
V
IH
V
IL
(*)
V
I
V
IH
V
IL
=-50 µA 5.4 5.49 5.4
O
or
=-24 mA 3.86 3.76
O
=-24 mA 4.86 4.76
O
IO=50 µA 0.001 0.1 0.1
=
=50 mA 0.001 0.1 0.1
O
or
=24 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
VI=VCCor GND ±0.1 ±1 µA
=25oC-40to85
A
Min. Typ. Max. Min . Max.
2.0 1.5 2.0
1.5 0.8 0.8
o
C
Current
Dynamic Output Current
I
OLD
OHD
(note 1, 2)
I
1) Maximum testduration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω.
(*)All outputs loaded.
5.5 V
= 1.65 V max 75 mA
OLD
V
= 3.85 V min -75 mA
OHD
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Inputtr=tf=3ns)
Symbol Parameter Test Cond itio n Value Unit
t
Propagation Delay Time 5.0
PLH
t
PHL
(*)Voltage range is 5V ± 0.5V
V
(V)
CC
(*)
T
=25oC-40to85
A
Min. Typ. Max. Min . Max.
1.5 5.0 9.0 1.0 10.0 ns
o
C
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Condit ions Value Unit
=25oC-40to85
T
A
Min. Typ. Max. Min . Max.
4
Input Capacitance
C
IN
Power Dissipation
C
PD
V
CC
(V)
5.0
5.0 30 pF
Capacitance (note 1)
1) CPDis defined as the value ofthe IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. I
(opr) =CPD• VCC•fIN+ICC/n (percircuit)
CC
o
C
pF
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Page 4
74ACT08
TEST CIRCUIT
CL= 50 pF or equivalent (includes jig and probe capa citance)
= 500Ω or equivalent
R
L=R1
R
WAVEFORM: PROPAGATIONDELAYS (f=1MHz; 50%duty cycle)
of pulse generator (typically 50Ω)
T=ZOUT
4/7
Page 5
Plastic DIP14 MECHANICAL DATA
74ACT08
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
mm inch
P001A
5/7
Page 6
74ACT08
SO14 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45 (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S 8 (max.)
mm inch
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P013G
Page 7
74ACT08
Information furnished is believed to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use of such information nor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis granted byimplication or otherwise underany patent orpatent rightsof SGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subject to change withoutnotice. This publication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronicsproducts are notauthorizedfor useascritical components in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics- Printed in Italy - All Rights Reserved
Australia- Brazil - Canada- China- France- Germany - Hong Kong- Italy- Japan- Korea - Malaysia- Malta - Morocco - The Netherlands-
Singapore- Spain- Sweden- Switzerland - Taiwan- Thailand - United Kingdom - U.S.A
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
.
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