Page 1
74ACT04
HEX INVERTER
■ HIGH SPEED: t
■ LOWPOWER DISSIPATION:
=4µA (MAX.) at TA=25oC
I
CC
■ COMPATIBLEWITHTTLOUTPUTS
V
=2V(MIN),VIL= 0.8V (MAX)
IH
■ 50Ω TRANSMISSION LINE DRIVING
= 4.5 ns(TYP.) at VCC=3.3V
PD
CAPABILITY
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=24mA(MIN)
OH
■ BALANCEDPROPAGATIONDELAY S:
t
≅ t
PLH
PHL
■ OPERATINGVOLTAGERAN GE:
V
(OPR)= 4.5V to 5.5V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
74SERIES04
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The ACT04 is an advanced high-speed CMOS
HEX INVERTER fabricated with sub-micron
silicon gate and double-layermetal wiringC
2
MOS
technology. It is ideal for low power applications
mantaining high speed operation similar to
B
(Plastic Package)
(Micro Package)
M
ORDERCODES:
74ACT04B 74ACT04M
equivalentBipolarSchottky TTL.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunityand stabeoutput.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOSoutput voltage levels.
All inputs and outputs are equipped with
protectioncircuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PINCONNECTION AND IEC LOGICSYMBOLS
April 1997
1/7
Page 2
74ACT04
INPUTAND OUTPUTEQUIVALENTCIRCUIT
PIN DESCRIPTION
PI N No SYM B O L NAME AND F UNC T I ON
1, 3, 5, 9,
1A to 6A Data Inputs
11, 13
2, 4, 6, 8,
1Y to 6Y Data Oututs
10, 12
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
TRUTHTABLE
AY
LH
HL
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
OK
I
orI
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
Supply Voltage -0.5 to +7 V
CC
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current ± 20 mA
IK
DC Output Diode Current ± 20 mA
DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 300 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
o
C
o
C
RECOMMENDED OPERATINGCONDITIONS
Symbol Parameter Valu e Unit
V
V
V
T
dt/dv Input Rise and Fall Time V
1) VINfrom0.8V to2.0V
2/7
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 toV
I
Output Voltage 0 toV
O
Operating Temperature: -40to +85
op
= 4.5 to 5.5V (note 1) 8 ns/V
CC
CC
CC
V
V
o
C
Page 3
DC SPECIFICATIONS
74ACT04
Symbol Parameter Test Condition s Value Unit
T
V
CC
(V)
High Level Input Voltage 4.5 VO= 0.1 V or
V
IH
5.5 2.0 1.5 2.0
Low Level Input Voltage 4.5 VO= 0.1 V or
V
IL
5.5 1.5 0.8 0.8
High Level Output
V
OH
Voltage
4.5
5.5 I
4.5 I
5.5 I
Low Level Output
V
OL
Voltage
4.5
5.5 I
4.5 I
5.5 I
Input Leakage Current
I
I
Max ICC/Input 5.5 VI=VCC-2.1 V 0.6 1.5 mA
I
CCT
Quiescent Supply
I
CC
5.5
5.5 VI=VCCor GND 4 40 mA
V
- 0.1 V
CC
- 0.1 V
V
CC
IO=-50 µA 4.4 4.49 4.4
(*)
=
V
I
V
IH
V
IL
(*)
V
I
V
IH
V
IL
=-50 µA 5.4 5.49 5.4
O
or
=-24 mA 3.86 3.76
O
=-24 mA 4.86 4.76
O
IO=50 µA 0.001 0.1 0.1
=
=50 mA 0.001 0.1 0.1
O
or
=24 mA 0.36 0.44
O
=24 mA 0.36 0.44
O
VI=VCCor GND ±0.1 ±1 µA
=25oC-40to85
A
Min. Ty p. Ma x. Min. Max.
2.0 1.5 2.0
1.5 0.8 0.8
o
C
Current
Dynamic Output Current
I
OLD
OHD
(note 1, 2)
I
1) Maximum testduration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50 Ω.
(*)All outputs loaded.
5.5 V
= 1.65 V max 75 mA
OLD
V
= 3.85 V min -75 mA
OHD
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (CL= 50 pF, RL=500 Ω, Inputtr=tf=3ns)
Symbol Parameter Test Conditi on Value Unit
t
Propagation Delay Time 5.0
PLH
t
PHL
(*)Voltage range is 5V± 0.5V
V
(V)
CC
(*)
T
=25oC-40to85
A
Min. Ty p. Ma x. Min. Max.
1.5 4.5 7.5 1.0 8.5 ns
o
C
CAPACITIVE CHARACTERISTICS
Symbol Parameter Test Condition s Value Unit
V
CC
(V)
Input Capacitance 5.0 4
C
IN
Power Dissipation
C
PD
5.0 37 pF
=25oC-40to85
T
A
Min. Ty p. Ma x. Min. Max.
Capacitance (note 1)
1) CPDis defined as the value ofthe IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to
Test Circuit). Average operating current can be obtained by the following equation. I
(opr) = CPD• VCC•fIN+ICC/n (percircuit)
CC
o
C
pF
3/7
Page 4
74ACT04
TEST CIRCUIT
CL= 50 pF or equivalent (includes jig and probe capacitance)
= 500Ω or equivalent
R
L=R1
R
WAVEFORM: PROPAGATIONDELAYS (f=1MHz)
of pulse generator (typically 50Ω)
T=ZOUT
4/7
Page 5
Plastic DIP14 MECHANICALDATA
74ACT04
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
mm inch
P001A
5/7
Page 6
74ACT04
SO14 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019
c1 45 (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S 8 (max.)
mm inch
6/7
P013G
Page 7
74ACT04
Information furnished is believedto be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes no responsability forthe
consequencesof use ofsuch information nor for anyinfringement of patentsor other rights ofthirdparties whichmay results from its use. No
licenseisgranted by implicationor otherwise underanypatent orpatentrights ofSGS-THOMSONMicroelectronics.Specificationsmentioned
in this publicationare subject to change withoutnotice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSONMicroelectronics productsarenotauthorized for useascriticalcomponents in life supportdevices or systemswithoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - AllRights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy- Japan- Korea- Malaysia- Malta- Morocco- TheNetherlands -
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
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.
7/7
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