Datasheet 74ACT00MTR, 74ACT00M, 74ACT00B, 74ACT00TTR Datasheet (SGS Thomson Microelectronics)

74ACT00

QUAD 2-INPUT NAND GATE

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 2µA(MAX.) at TA=25°C

CC

■ COMPA TIBLE WITH TTL OUTPUTS

V

= 2V (MIN.), VIL = 0.8V (MAX.)

IH

■ 50Ω TRANSMISSION LINE DRIVING

= 4.5ns (TYP.) at VCC = 5V

PD

CAPABILITY

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 24mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOL TAGE RANGE:

V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

PHL

(OPR) = 4.5V to 5.5V

74 SERIES 00

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74ACT00 is an advanced high-speed CMOS
QUAD 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS tecnology.
The internal circuit is composed of 3 stages
including buffer output , which enables high noise

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP 74ACT00B

SOP 74ACT00M 74ACT00MTR

TSSOP 74ACT00TTR

immunity and stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOS output voltage levels.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them 2KV ESD immunity and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8April 2001

74ACT00

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

V

CC

TRUTH TABLE

ABY

LLH

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

Positive Supply Voltage

-0.5 to +7 V

±

20 mA

±

20 mA

±

50 mA

±

200 mA

-65 to +150
300 °C

V
V

°C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

dt/dv

1) VIN from 0.8V to 2.0V

2/8

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time V

= 4.5 to 5.5V (note 1)

CC

4.5 to 5.5 V

CC
CC

-55 to 125 °C
8 ns/V

V
V

DC SPECIFICATIONS

Test Condition Value

T

Symbol Parameter

V

CC

(V)

V

V

V

V

I

CCT

I

I

OLD

I

OHD

1) Maxim um test duration 2ms, one output loaded at tim e

2) Incid ent wave switching is guaranteed on transmission l i nes with impe dances as low as 50Ω

High Level Input

IH

Voltage
Low Level Input

IL

Voltage
High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage Cur-

I

rent

Max ICC/Input
Quiescent Supply

CC

Current
Dynamic Output

Current (note 1, 2)

4.5 VO = 0.1 V or
V

-0.1V

CC

4.5 VO = 0.1 V or
V

5.5 1.5 0.8 0.8 0.8

4.5

5.5

4.5

5.5

4.5

5.5

4.5

5.5

V

5.5

5.5

V

5.5

V

5.5

V

-0.1V

CC

=-50 µA

I

O

I

=-50 µA

O

I

=-24 mA

O

I

=-24 mA

O

=50 µA

I

O

I

=50 µA

O

I

=24 mA

O

I

=24 mA

O

= VCC or GND

I

VI = VCC - 2.1V

= VCC or GND

I

= 1.65 V max

OLD

= 3.85 V min

OHD

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.5 2.0 2.0

1.5 0.8 0.8 0.8

4.4 4.49 4.4 4.4

5.4 5.49 5.4 5.4

3.86 3.76 3.7

4.86 4.76 4.7

0.001 0.1 0.1 0.1

0.001 0.1 0.1 0.1

0.36 0.44 0.5

0.36 0.44 0.5

± 0.1 ± 1 ± 1 µA

0.6 1.5 1.6 mA
22040µ

74ACT00

-40 to 85°C -55 to 125°C

75 50

-75 -50

Unit

V5.5 2.0 1.5 2.0 2.0

V

V

A

mA
mA

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500 Ω, Input tr = tf = 3ns)

Test Condition Value

T

Symbol Parameter

t

PLH tPHL

(*) Vol tage range is 5.0V ± 0.5V

Propagation Delay
Time

V

5.0

(V)

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

(*)

1.5 4.5 9.0 1.0 9.5 1.0 9.5 ns

-40 to 85°C -55 to 125°C

Unit

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

V

CC

(V)

C

C

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

Input Capacitance

IN

Power Dissipation

PD

Capacitance (note 1)5.0

5.0 4 pF

= 10MHz

f

IN

T

A

Min. Typ. Max. Min. Max. Min. Max.

31 pF

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/4 (per gate)

CC(opr)

Unit

3/8

74ACT00

TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)
R

= R1 = 500Ω or equivalent

L

R

= Z

of pulse generator (typically 50Ω)

T

OUT

WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)

4/8

Plastic DIP-14 MECHANICAL DATA

74ACT00

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065

b0.5 0.020

b1 0.25 0.010

D200.787
E8.5 0.335

e2.54 0.100

e3 15.24 0.600

F7.10.280

I5.10.201
L3.3 0.130
Z 1.27 2.54 0.050 0.100

mm inch

P001A

5/8

74ACT00

SO-14 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010

C0.5 0.019

c1 45 (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e1.27 0.050
e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M0.680.026

S8 (max.)

mm inch

6/8

P013G

TSSOP14 MECHANICAL DATA

74ACT00

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A1.10.433

A1 0.05 0.10 0.15 0.002 0.004 0.006

A2 0.85 0.9 0.95 0.335 0.354 0.374

b 0.19 0.30 0.0075 0.0118

c 0.09 0.20 0.0035 0.0079

D 4.9 5 5.1 0.193 0.197 0.201

E 6.25 6.4 6.5 0.246 0.252 0.256

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0

o

o

4

o

8

o

0

o

4

o

8

L 0.50 0.60 0.70 0.020 0.024 0.028

A2

A

A1

PIN 1 IDENTIFICATION

b

e

c

K

L

E

D

E1

1

7/8

74ACT00

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