The 74AC16541 is an advanced high-speed
CMOS 16-BIT BUS BUFFER (3-STATE) fabricated with sub-micron silicon gate and double-layer
metal wiring C
This is composed of two 8-bit sections with
separate output-enable signals. For either 8-bit
buffers section, the 3 STATE control gate
operates as a two input AND such that if either
nG1
and nG2 are high, all outputs are in the high
impedence state.
= 28% VCC(MIN.)
PHL
2
MOS tecnology.
74AC16541
16-BIT BUS BUFFER
TSSOP
ORDER CODES
PACKAGETUBET & R
TSSOP74AC16541TTR
PIN CO NNECTION
1/9February 2003
Page 2
74AC16541
INPUT AND OUTP UT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
1, 481G1
2, 3,5,6,8, 9,
11, 12
13,14,16, 17,
19, 20, 22, 23
24, 252G1
36,35,33, 32,
30, 29, 27, 26
47,46,44, 43,
41, 40, 38, 37
4, 10, 15, 21,
28, 34, 39, 45
7, 18, 31, 42V
,1G2 Output Enable Inputs
1Y1 to 1Y8 Data Outputs
2Y1 to 2Y8 Data Outputs
,2G2 Output Enable Inputs
2A1 to 2A8 Data Outputs
1A1 to 1A8 Data Outputs
GNDGround (0V)
CC
Positive Supply Voltage
TRUTH TABLE
INPUTSOUTPUT
G1
HXXZ
XHXZ
LLHH
LLLL
X : Don’t Care
Z : High Impedance
G2AnYn
IEC LOGIC SYMBOLS
2/9
Page 3
74AC16541
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
V
I
I
OK
I
or I
I
CC
T
stg
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
T
dt/dvInput Rise and Fall Time (note 1) V
1) VINfrom30% to 70%of V
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
Lead Temperature (10 sec)
L
Supply Voltage
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature
op
= 3.0, 4.5 or 5.5
CC
CC
-0.5 to +7.0V
-0.5 to +7.0V
± 20mA
± 50mA
± 50mA
± 400mA
-65 to +150°C
300°C
2to6V
CC
CC
-55 to 125°C
0to8
ns/V
V
V
V
3/9
Page 4
74AC16541
DC SPECIFICATIONS
SymbolParameter
V
V
V
I
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
High Impedance
I
OZ
Output Leakage
Current
Quiescent Supply
CC
Current
Test ConditionValue
=25°C
T
V
CC
(V)
3.0
5.53.852.753.853.85
3.0
5.52.751.651.651.65
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
5.5
5.5
V
= 0.1 V or
O
V
-0.1V
CC
= 0.1 V or
V
O
V
-0.1V
CC
IO=-50 µA
=-50 µA
I
O
=-50 µA
I
O
=-12 mA
I
O
=-24 mA
I
O
=-24 mA
I
O
IO=50 µA
=50 µA
I
O
=50 µA
I
O
=12 mA
I
O
I
=24 mA
O
I=VIH
or GND
or V
IL
V
I=VCC
V
VO=VCCor GND
V
I=VCC
or GND
A
Min.Typ. Max.Min.Max. Min. Max.
2.11.52.12.1
1.50.90.90.9
2.92.992.92.9
4.44.494.44.4
5.45.495.45.4
2.562.462.46
3.863.763.76
4.864.764.76
0.0020.10.10.1
0.0010.10.10.1
0.0010.10.10.1
-40 to 85°C -55 to 125°C
0.360.440.44
0.360.440.44
± 0.1± 1± 1µA
± 0.5± 5± 5µA
88080µA
Unit
V4.53.152.253.153.15
V4.52.251.351.351.35
V
V
AC ELECTRICAL C HARACTERISTICS (C
Test ConditionValue
SymbolParameter
t
PLHtPHL
Propagation Delay
Time
AtoY
t
PZLtPZH
t
PLZtPHZ
(*) Voltagerange is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Output Enable
Time
Output Disable
Time
4/9
3.3
5.0
3.3
5.0
3.3
5.0
V
(V)
CC
(*)
(**)
(*)
(**)
(*)
(**)
C
(pF)
L
=50pF,RL= 500 Ω, Input tr=tf= 3ns)
L
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min. Max.
6.37.59.59.5
4.57.09.09.0
8.510.012.012.0
5.57.09.09.0
7.59.011.511.5
6.08.011.011.0
Unit
ns
ns
ns
Page 5
74AC16541
CAPACITIVE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
V
(V)
5.0
CC
= 10MHz
f
IN
T
A
Min.Typ. Max.Min.Max. Min. Max.
7101010pF
14pF
25pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
TEST CIRCUIT
-40 to 85°C -55 to 125°C
CC(opr)=CPDxVCCxfIN+ICC
Unit
/16
TESTSWITCH
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL= 50 pF or equivalent (includes jig and probe capacitance)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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