•Extra data width for wide address/data paths or buses carrying
parity
•Ideal where high speed, light loading, or increased fan-in are
required with MOS microprocessors
•Slim DIP 300 mil package
•Broadside pinout
•Output capability: +64mA/–32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
•Power-up 3-State
•Power-up reset
QUICK REFERENCE DAT A
SYMBOLPARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
IN
Propagation delay
Dn to Qn
Input capacitanceVI = 0V or V
Output capacitance
Total supply currentOutputs disabled; VCC = 5.5V500nA
DESCRIPTION
The 74ABT841 Bus interface register is designed to provide extra
data width for wider data/address paths of buses carrying parity.
The 74ABT841 consists of ten D-type latches with 3-State outputs.
The flip-flops appear transparent to the data when Latch Enable
(LE) is High. This allows asynchronous operation, as the output
transition follows the data in transition. On the LE High-to-Low
transition, the data that meets the setup and hold time is latched.
Data appears on the bus when the Output Enable (OE
When OE
T
is High the output is in the High-impedance state.
CONDITIONS
= 25°C; GND = 0V
amb
TYPICALUNIT
CL = 50pF; VCC = 5V4.1ns
CC
Outputs disabled;
= 0V or V
V
O
CC
4pF
7pF
) is Low.
ORDERING INFORMATION
PACKAGESTEMPERATURE RANGE OUTSIDE NORTH AMERICANORTH AMERICADWG NUMBER
24-Pin Plastic DIP–40°C to +85°C74ABT841 N74ABT841 NSOT222-1
24-Pin plastic SO–40°C to +85°C74ABT841 D74ABT841 DSOT137-1
24-Pin Plastic SSOP Type II–40°C to +85°C74ABT841 DB74ABT841 DBSOT340-1
24-Pin Plastic TSSOP Type I–40°C to +85°C74ABT841 PW74ABT841PW DHSOT355-1
PIN CONFIGURA TION
1
OE
2
D0
3
D1
4
D2
5
D3
6
D4
7
D5
8
D6
9
D7Q7
1015
D8
1114D9
1213GND
TOP VIEW
24
V
CC
Q0
23
Q1
22
Q2
21
Q3
20
Q4
19
Q5
18
Q6
17
16
Q8
Q9
LE
SA00247
PIN DESCRIPTION
PIN NUMBERSYMBOLFUNCTION
1OE
2, 3, 4, 5, 6,
7, 8, 9, 10, 11
23, 22, 21, 20, 19,
18, 17, 16, 15, 14
D0-D9Data inputs
Q0-Q9Data outputs
13LE
12GNDGround (0V)
24V
Output enable input
(active-Low)
Latch enable input (active
falling edge)
Positive supply voltage
CC
1995 Sep 06853-1628 15703
1
Page 2
Philips Semiconductors Product specification
10-bit bus interface latch (3-State)
LOGIC SYMBOL
234567891011
D0 D1 D2 D3 D4 D5 D6 D7 D8 D9
13LE
1OE
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9
23 22 21 20 19 18 17 16 15 14
SA00244
74ABT841
FUNCTION TABLE
INPUTSOUTPUTS
OELEDnQ0 – Q9
L
L
L
L
H
H
↓
↓
L
H
l
h
L
H
L
H
HXXZHigh impedance
LLXNCHold
H = High voltage level
h = High voltage level one set-up time prior to the High-to-Low LE
transition
L = Low voltage level
l = Low voltage level one set-up time prior to the High-to-Low LE
transition
↓ = High-to-Low LE transition
NC= No change
X = Don’t care
Z = High impedance “off” state
OPERATING
MODE
Transparent
Latched
LOGIC SYMBOL (IEEE/IEC)
1
13
1015
1114
EN
C1
223
1D
322
421
520
619
718
817
916
SA00245
1995 Sep 06
2
Page 3
Philips Semiconductors Product specification
10-bit bus interface latch (3-State)
LOGIC DIAGRAM
D3
D
LQ
21
Q2
OE
D0
2
13
LE
1
D
LQ
D1
3
D
LQ
23
Q0
D2
4
22
Q1
5
D
LQ
Q3
20
D4
6
D
LQ
Q4
19
D5
7
D
LQ
Q5
74ABT841
Q7
16
D8
10
D
LQ
Q8
15
D9
11
D
LQ
14
Q9
SA00246
D
LQ
D7
9
D
LQ
17
Q6
D6
8
18
ABSOLUTE MAXIMUM RA TINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
DC supply voltage–0.5 to +7.0V
DC input diode currentVI < 0–18mA
DC input voltage
DC output diode currentVO < 0–50mA
DC output voltage
DC output currentoutput in Low state128mA
Storage temperature range–65 to 150°C
PARAMETERCONDITIONSRATINGUNIT
3
3
1, 2
–1.2 to +7.0V
output in Off or High state–0.5 to +5.5V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.