•The 74ABT651 is the inverting version of the 74ABT652
•Multiplexed real-time and stored data
•3-State outputs
•Live insertion/extraction permitted.
•Power-up 3-State
•Power-up reset
•Output capability: +64mA/–32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
QUICK REFERENCE DATA
SYMBOLPARAMETER
t
PLH
t
PHL
C
C
I
CCZ
IN
I/O
Propagation delay
CPBA to An or CPAB to Bn
Input capacitanceVI = 0V or V
I/O capacitanceOutputs disabled; VO = 0V or V
Total supply currentOutputs disabled; VCC =5.5V110µA
DESCRIPTION
The 74ABT651 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT651 transceiver/register consists of bus transceiver
circuits with 3-State outputs, D-type flip-flops, and control circuitry
arranged for multiplexed transmission of data directly from the input
bus or the internal registers. Data on the A or B bus will be clocked
into the registers as the appropriate clock pin goes High. Output
Enable (OEAB, OEBA
bus management.
The following examples demonstrate the four fundamental
bus-management functions that can be performed with the
74ABT651.
The select pins determine whether data is stored or transferred
through the device in real time.
The output enable pins determine the direction of the data flow.
CONDITIONS
= 25°C; GND = 0V
T
amb
CL = 50pF; VCC = 5V
CC
) and Select (SAB, SBA) pins are provided for
TYPICALUNIT
3.8
4.4
4pF
CC
7pF
ns
ORDERING INFORMATION
PACKAGESTEMPERATURE RANGE OUTSIDE NORTH AMERICANORTH AMERICADWG NUMBER
24-Pin Plastic DIP–40°C to +85°C74ABT651 N74ABT651 NSOT222-1
24-Pin plastic SO–40°C to +85°C74ABT651 D74ABT651 DSOT137-1
24-Pin Plastic SSOP Type II–40°C to +85°C74ABT651 DB74ABT651 DBSOT340-1
24-Pin Plastic TSSOP Type I–40°C to +85°C74ABT651 PW74ABT651PW DHSOT355-1
PIN CONFIGURA TION
1
CPAB
2
SAB
3
OEAB
4
A0
5
A1
6
A2
7
A3
8
A4
9
A5
10
A6
11
A7
12
GND
V
24
CC
CPBA
23
SBA
22
OEBA
21
B0
20
B1
19
B2
18
B3
17
B4
16
B5
15
B6
14
B713
SA00094
PIN DESCRIPTION
PIN
NUMBER
1, 23
2, 22
3, 21
4, 5, 6, 7, 8,
9, 10, 11
20, 19, 18,
17, 16, 15,
14, 13
12GNDGround (0V)
24V
SYMBOLFUNCTION
CPAB /
CPBA
SAB /
SBA
OEAB /
OEBA
A0 – A7Data inputs/outputs (A side)
B0 – B7Data inputs/outputs (B side)
CC
A to B clock input / B to A clock input
A to B select input / B to A select input
A to B Output Enable input /
H = High voltage level
L = Low voltage level
X = Don’t care
↑ = Low-to-High clock transition
*The data output function may be enabled or disabled by various signals at the OEBA
enabled, i.e., data at the bus pins will be stored on every Low-to-High transition of the clock.
**If both Select controls (SAB and SBA) are Low, then clocks can occur simultaneously. If either Select control is High, the clocks must be
DC supply voltage–0.5 to +7.0V
DC input diode currentVI < 0–18mA
DC input voltage
DC output diode currentVO < 0–50mA
DC output voltage
DC output currentoutput in Low state128mA
Storage temperature range–65 to 150°C
PARAMETERCONDITIONSRATINGUNIT
3
3
1, 2
–1.2 to +7.0V
output in Off or High state–0.5 to +5.5V
NOTES:
1. 1Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
High–level output voltageVCC = 5.0V; IOH = –3mA; VI = VIL or V
OH
VCC = 4.5V; IOH = –32mA; VI = VIL or V
Low–level output voltageVCC = 4.5V; IOL = 64mA; VI = VIL or V
OL
3
Power-up output low voltageVCC = 5.5V; IO = 1mA; VI = GND or V
I
Input leakage
current
Control pinsVCC = 5.5V; VI = GND or 5.5V±0.01±1.0±1.0µA
Data pinsVCC = 5.5V; VI = GND or 5.5V±5±100±100µA
IH
IH
IH
IH
CC
2.53.22.5V
3.03.73.0V
2.02.302.0V
0.420.550.55V
0.130.550.55V
Power-off leakage currentVCC = 0.0V; VO or VI ≤ 4.5V±5.0±100±100µA
Power-up/down 3-State
PD
output current
3–State output High currentVCC = 5.5V; VO = 2.7V; VI = VIL or V
OZH
3–State output Low currentVCC = 5.5V; VO = 0.5V; VI = VIL or V
OZL
4
Output High leakage currentVCC = 5.5V; VO = 5.5V; VI = GND or V
O
Output current
1
Quiescent supply current
Additional supply current per
CC
input pin
2
VCC = 2.1V; VO = 0.5V; VOE = Don’t Care;
= GND or V
V
I
CC
IH
IH
CC
±5.0±50±50µA
5.05050µA
–5.0–50–50µA
5.05050µA
VCC = 5.5V; VO = 2.5V–40–65–180–40–180mA
VCC = 5.5V; Outputs High, VI = GND or V
VCC = 5.5V; Outputs Low, VI = GND or V
VCC = 5.5V; Outputs 3–State;
= GND or V
V
I
CC
VCC = 5.5V; one input at 3.4V,
other inputs at V
or GND; VCC = 5.5V
CC
CC
CC
110250250µA
203030mA
110250250µA
0.31.51.5mA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power .
4. This parameter is valid for any V
transition time of up to 100µsec is permitted.
between 0V and 2.1V, with a transition time of up to 10msec. From VCC = 2.1V to VCC = 5V ± 10%, a
CC
amb
to +85°C
UNIT
AC CHARACTERISTICS
GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω
SYMBOLPARAMETERWA VEFORM
f
MAX
t
PLH
t
PHL
t
PLH
t
PHL
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
t
PZH
t
PZL
t
PHZ
t
PLZ
1995 Sep 06
Maximum clock frequency1125300125MHz
Propagation delay