Product specification
Supersedes data of 1996 Oct 08
IC23 Data Handbook
1998 Jan 16
Page 2
Philips Semiconductors Product specification
74ABT540Octal buffer, inverting (3-State)
FEA TURES
•Octal bus interface
•3-State buffers
•Live insertion/extraction permitted
•Efficient pinout to facilitate PC board layout
DESCRIPTION
The 74ABT540 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT540 device is an octal inverting buffer that is ideal for
driving bus lines. The device features input and outputs on opposite
sides of the package to facilitate printed circuit board layout.
•Output capability: +64mA/–32mA
•Latch-up protection exceeds 500mA per Jedec JC40.2 Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
•Power-up 3-State
QUICK REFERENCE DA TA
SYMBOLPARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
IN
Propagation delay
An to Yn
CL = 50pF; VCC = 5V3.1ns
Input capacitanceVI = 0V or V
Output capacitanceOutputs disabled; VO = 0V or V
Total supply currentOutputs disabled; VCC = 5.5V50µA
ORDERING INFORMATION
PACKAGESTEMPERATURE RANGEOUTSIDE NORTH AMERICANORTH AMERICADWG NUMBER
20-Pin Plastic DIP–40°C to +85°C74ABT540 N74ABT540 NSOT146-1
20-Pin plastic SO–40°C to +85°C74ABT540 D74ABT540 DSOT163-1
20-Pin Plastic SSOP Type II–40°C to +85°C74ABT540 DB74ABT540 DBSOT339-1
20-Pin Plastic TSSOP Type I–40°C to +85°C74ABT540 PW74ABT540PW DHSOT360-1
CONDITIONS
T
= 25°C; GND = 0V
amb
CC
CC
TYPICALUNIT
3pF
7pF
PIN CONFIGURATION
1
OE0
2
A0
3
A1
4
A2
5
A3
6
A4
7
A5
8
A6
9
A7
1011
GND
1998 Jan 16853–1609 18864
20
19
18
17
16
15
14
13
12
SA00197
V
OE1
Y
Y
Y
Y
Y
Y
Y
Y
CC
0
1
2
3
4
5
6
7
LOGIC SYMBOL
2
OE
OE
1
0
19
1
2
A0
3
A1
4
A2
5
A3
6
A4
7
A5
8
A6
9
A7
18
17
16
15
14
13
12
11
SA00198
Y
0
1
Y
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Page 3
Philips Semiconductors Product specification
74ABT540Octal buffer, inverting (3-State)
LOGIC SYMBOL (IEEE/IEC)
PIN DESCRIPTION
PIN NUMBERSYMBOLNAME AND FUNCTION
2, 3, 4, 5,
&
1
19
EN
6, 7, 8, 9
18, 17, 16, 15,
14, 13, 12, 11
A0 – A7Data inputs
Y0 – Y7Data outputs
1, 19OE0, OE1Output enables
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
SA00199
10GNDGround (0V)
20V
CC
FUNCTION TABLE
INPUTSOUTPUTS
OE0OE1AnYn
L
L
X
H
L
L
H
X
L
H
X
X
Positive supply voltage
H
L
Z
Z
H =High voltage level
L =Low voltage level
X = Don’t care
Z =High impedance ”off” state
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
DC supply voltage–0.5 to +7.0V
DC input diode currentVI < 0–18mA
DC input voltage
DC output diode currentVO < 0–50mA
DC output voltage
DC output currentoutput in Low state128mA
Storage temperature range–65 to 150°C
PARAMETERCONDITIONSRATINGUNIT
3
3
1, 2
–1.2 to +7.0V
output in Off or High state–0.5 to +5.5V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
High-level output voltageVCC = 5.0V; IOH = –3mA; VI = VIL or V
VCC = 4.5V; IOH = –32mA; VI = VIL or V
Low-level output voltageVCC = 4.5V; IOL = 64mA; VI = VIL or V
Input leakage currentVCC = 5.5V; VI = GND or 5.5V±0.01±1.0±1.0µA
I
IH
IH
IH
IH
2.52.92.5V
3.03.43.0V
2.02.42.0V
0.420.550.55V
Power-off leakage currentVCC = 0.0V; VI or VO ≤ 4.5V±5.0±100±100µA
Power-up/down 3-State
PD
output current
3
3-State output High currentVCC = 5.5V; VO = 2.7V; VI = VIL or V
3-State output Low currentVCC = 5.5V; VO = 0.5V; VI = VIL or V
Output High leakage currentVCC = 5.5V; VO = 5.5V; VI = GND or V
Output current
1
Quiescent supply currentVCC = 5.5V; Outputs Low, VI = GND or V
Additional supply current per
input pin
2
VCC = 2.1V; VO = 0.5V; VI = GND or VCC;
V
= Don’t care
OE
IH
IH
CC
±5.0±50±50µA
5.05050µA
–5.0–50–50µA
5.05050mA
VCC = 5.5V; VO = 2.5V–50–100–180–50–180mA
VCC = 5.5V; Outputs High, VI = GND or V
VCC = 5.5V; Outputs 3-State;
VI = GND or V
CC
Outputs enabled, one input at 3.4V , other
inputs at VCC or GND; VCC = 5.5V
Outputs 3-State, one data input at 3.4V ,
other inputs at VCC or GND; VCC = 5.5V
Outputs 3-State, one enable input at 3.4V ,
other inputs at VCC or GND; VCC = 5.5V
CC
CC
50250250µA
243030mA
50250250µA
0.51.51.5mA
0.55050µA
0.51.51.5mA
= –40°C
V
UNIT
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any V
transition time of up to 100µsec is permitted.
between 0V and 2.1V , with a transition time of up to 10msec. From V
CC
1998 Jan 16
4
= 2.1V to VCC = 5V ± 10% a
CC
Page 5
Philips Semiconductors Product specification
74ABT540Octal buffer, inverting (3-State)
AC CHARACTERISTICS
GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500Ω
LIMITS
T
SYMBOLPARAMETERWAVEFORM
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Propagation delay
An to Yn
Output enable time
to High and Low level
Output disable time
from High and Low level
1
2
2
AC WAVEFORMS
VM = 1.5V, VIN = GND to 3.0V
= +25°C
amb
VCC = +5.0V
MinTypMaxMinMax
1.0
1.0
1.1
1.1
1.5
1.2
2.9
3.1
4.1
4.6
3.6
2.9
4.1
4.3
4.9
5.8
6.8
5.7
T
= –40°C to +85°C
amb
VCC = +5.0V ±0.5V
1.0
1.0
1.1
1.1
1.5
1.2
4.8
4.8
5.9
6.4
7.3
6.2
UNIT
ns
ns
ns
An INPUT
Yn OUTPUT
V
M
t
PHL
V
M
V
M
t
PLH
V
M
SA00200
Waveform 1. W aveforms Showing the Input (An) to Output (Y n)
Propagation Delays
TEST CIRCUIT AND WAVEFORMS
7 V
S1
Open
GND
From Output
Under Test
C
L
= 50 pF
500 Ω
500 Ω
Load Circuit
OEn
INPUT
Yn
OUTPUT
Yn
OUTPUT
V
M
t
PZL
V
M
t
PZH
V
M
V
M
t
PLZ
t
PHZ
3.5V
V
OL
V
OL
V
OH
V
OH
0V
SA00201
+ 0.3V
– 0.3V
Waveform 2. Waveforms Showing the 3-State Output Enable
and Disable Times
DEFINITIONS
C
1998 Jan 16
TESTS1
t
pd
t
PLZ/tPZL
t
PHZ/tPZH
=Load capacitance includes jig and probe capacitance;
SO20:plastic small outline package; 20 leads; body width 7.5 mmSOT163-1
1998 Jan 16
7
Page 8
Philips Semiconductors Product specification
74ABT540Octal buffer, inverting (3-State)
SSOP20:plastic shrink small outline package; 20 leads; body width 5.3 mmSOT339-1
1998 Jan 16
8
Page 9
Philips Semiconductors Product specification
74ABT540Octal buffer, inverting (3-State)
TSSOP20:plastic thin shrink small outline package; 20 leads; body width 4.4 mmSOT360-1
1998 Jan 16
9
Page 10
Philips SemiconductorsProduct specification
74ABT540Octal buffer, inverting (3-State)
Data sheet status
Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1]
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
print codeDate of release: 05-96
Document order number:9397-750-03471
yyyy mmm dd
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