Page 1
Philips Semiconductors Product specification
CC
74ABT20Dual 4-input NAND gate
QUICK REFERENCE DAT A
CONDITIONS
SYMBOL PARAMETER
T
Propagation
IN
CC
delay
An, Bn, Cn, Dn
n
to Y
Output to
Output skew
Input
capacitance
Total supply
current
CL = 50pF;
V
CC
VI = 0V or V
Outputs disabled;
V
CC
t
PLH
t
PHL
t
OSLH
t
OSHL
C
I
PIN CONFIGURA TION
1
A0
2
B0
3
NC
4
C0
5
D0
6
0
Y
GND
PIN DESCRIPTION
PIN
NUMBER
1, 2, 4, 5, 9,
10, 12, 13
6, 8 Yn Data outputs
7 GND Ground (0V)
14 V
SYMBOL NAME AND FUNCTION
An, Bn,
Cn, Dn
Data inputs
Positive supply voltage
CC
LOGIC SYMBOL
12 459101213
D0 A1 B1A0 B0 C0 C1 D1
Y0Y1
VCC = Pin 14
GND = Pin 7
68
= 25°C;
amb
GND = 0V
= 5V
= 5.5V
LOGIC DIAGRAM
1
A0
2
B0
4
C0
5
D0
9
A1
10
B1
12
C1
13
D1
6
Y0
8
Y1
SA00352
CC
TYPICAL UNIT
2.7
2.2
ns
0.3 ns
3 pF
50 µA
VCC = Pin 14
GND = Pin 7
LOGIC SYMBOL (IEEE/IEC)
14
V
CC
13
D1
12
C1
11
NC
10
B1
9
A1
87
Y1
SA00350
1
2
4
5
9
10
12
13
&
6
8
SF00068
FUNCTION TABLE
INPUTS OUTPUT
An Bn Cn Dn Yn
L X X X H
X L X X H
X X L X H
X X X L H
H H H H L
NOTES:
H = High voltage level
L = Low voltage level
X = Don’t care
SA00351
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
14-Pin Plastic DIP –40°C to +85°C 74ABT20 N 74ABT20 N SOT27-1
14-Pin plastic SO –40°C to +85°C 74ABT20 D 74ABT20 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +85°C 74ABT20 DB 74ABT20 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT20 PW 74ABT20PW DH SOT402-1
1995 Sep 22 853-181 1 15793
1
Page 2
Philips Semiconductors Product specification
SYMBOL
PARAMETER
UNIT
74ABT20Dual 4-input NAND gate
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
I
V
CC
I
IK
V
I
OK
OUT
OUT
T
stg
DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
I
DC input voltage
3
–1.2 to +7.0 V
DC output diode current VO < 0 –50 mA
DC output voltage
3
output in Off or High state –0.5 to +5.5 V
DC output current output in Low state 40 mA
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
MIN MAX
V
CC
V
V
V
I
OH
I
OL
∆t/∆v Input transition rise or fall rate 0 10 ns/V
T
amb
DC supply voltage 4.5 5.5 V
Input voltage 0 V
I
High-level input voltage 2.0 V
IH
Low-level input voltage 0.8 V
IL
High-level output current –15 mA
Low-level output current 20 mA
Operating free-air temperature range –40 +85 °C
CC
V
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL PARAMETER TEST CONDITIONS
V
V
V
I
OFF
I
CEX
I
∆I
Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V
IK
High-level output voltage VCC = 4.5V; IOH = –15mA; VI = VIL or V
OH
Low-level output voltage VCC = 4.5V; IOL = 20mA; VI = VIL or V
OL
I
Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA
I
IH
IH
Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA
Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V
I
Output current
O
Quiescent supply current VCC = 5.5V; VI = GND or V
CC
Additional supply current per
CC
input pin
1
2
VCC = 5.5V; VO = 2.5V –50 –75 –180 –50 –180 mA
VCC = 5.5V; One data input at 3.4V, other
inputs at V
or GND
CC
CC
CC
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip-flop or latch after applying the power.
T
= +25°C
amb
MIN TYP MAX MIN MAX
2.5 2.9 2.5 V
0.35 0.5 0.5 V
5.0 50 50 µA
2 50 50 µA
0.25 500 500 µA
T
amb
to +85°C
= –40°C
UNIT
1995 Sep 22
2
Page 3
Philips Semiconductors Product specification
74ABT20Dual 4-input NAND gate
AC CHARACTERISTICS
GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500Ω
LIMITS
T
= +25°C
SYMBOL PARAMETER WA VEFORM
amb
V
CC
= +5.0V
MIN TYP MAX MIN MAX
t
PLH
t
PHL
t
OSHL
t
OSLH
Propagation delay
An, Bn, Cn, Dn to Y
Output to Output skew
1
An or Bn to Y
n
n
1
2 0.3 0.5 0.5 ns
1.0
1.0
2.7
2.2
3.9
3.4
NOTE:
1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same
device. The specification applies to any outputs switching in the the same direction, either HIGH–to-LOW (t
parameter guaranteed by design.
AC WAVEFORMS
VM = 1.5V, VIN = GND to 3.0V
T
= –40°C to +85°C
amb
= +5.0V ±0.5V
V
CC
1.0
1.0
) or LOW-to-HIGH (t
OSHL
4.6
3.8
UNIT
ns
OSLH
);
An, Bn,
Cn, Dn
Yn
V
M
t
PHL
V
M
t
PLH
V
M
V
M
Waveform 1. Propagation Delay for Inverting Outputs
TEST CIRCUIT AND WAVEFORMS
V
CC
PULSE
GENERATOR
V
IN
R
D.U.T.
T
Test Circuit for Outputs
V
OUT
C
L
SA00353
R
L
INPUT
OUTPUT
OUTPUT N
same part
90%
NEGATIVE
PULSE
POSITIVE
PULSE
10%
t
PHL
MIN
t
PLH
MIN
t
PLH
MAX
t
OSLH
t
PHL
Waveform 2. Common edge skew
t
W
V
M
10% 10%
(tF)
t
THL
(tR)t
t
TLH
90% 90%
V
M
t
W
90%
V
M
V
M
10%
VM = 1.5V
MAX
t
OSHL
t
TLH
THL
SA00381
AMP (V)
0V
(tR)
(tF)
AMP (V)
0V
DEFINITIONS
RL = Load resistor; see AC CHARACTERISTICS for value.
= Load capacitance includes jig and probe capacitance;
C
L
see AC CHARACTERISTICS for value.
= Termination resistance should be equal to Z
R
T
pulse generators.
1995 Sep 22
OUT
of
FAMILY
74ABT
3
Input Pulse Definition
INPUT PULSE REQUIREMENTS
Amplitude Rep. Rate t
W
3.0V 1MHz 500ns 2.5ns
t
t
R
F
2.5ns
SH00067
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