Datasheet 74ABT10PW, 74ABT10N, 74ABT10DB, 74ABT10D Datasheet (Philips)

INTEGRATED CIRCUITS

74ABT10

Triple 3-input NAND gate

Product specification 1995 Sep 22
IC23 Data Handbook

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Philips Semiconductors Product specification

CC

74ABT10Triple 3-input NAND gate

QUICK REFERENCE DATA

CONDITIONS

SYMBOL PARAMETER

T

Propagation

IN

CC

delay
An, Bn, Cn
to Y

n

Output to
Output skew

Input
capacitance

Total supply
current

CL = 50pF;
VCC = 5V

VI = 0V or V
Outputs disabled;

VCC = 5.5V

t

PLH

t

PHL

t

OSLH

t

OSHL

C

I

PIN CONFIGURATION

1

A0

2

B0
A1

3

B1

4

C1

5

1

6

Y

GND

PIN DESCRIPTION

PIN

NUMBER

1, 2, 3, 4, 5,

9, 10, 11, 13

6, 8, 12 Yn Data outputs

7 GND Ground (0V)

14 V

SYMBOL NAME AND FUNCTION

An, Bn,

Cn

Data inputs

Positive supply voltage

CC

LOGIC DIAGRAM

1

A0

2

B0

13

C0

3

A1

4

B1

5

C1

9

A2

10

B2

11

VCC = Pin 14
GND = Pin 7

C2

= 25°C;

amb

GND = 0V

SA00346

CC

14

V

13

C0

12

Y

11

C2
B2

10

A2

9
87

Y2

12

6

8

SA00348

TYPICAL UNIT

3.3

2.2

0.4 ns

3 pF

50 µA

CC

0

Y0

Y1

Y2

ns

LOGIC SYMBOL

1 2 13 3 4 5 9 10

A0 B0 C0 B1 C1 A2 B2A1

Y0Y1Y2

VCC = Pin 14
GND = Pin 7

12 6 8

LOGIC SYMBOL (IEEE/IEC)

1

2

13

3

4

5

9

10

11

&

FUNCTION TABLE

INPUTS OUTPUTS

An Bn Cn Yn

L L L H
L L H H
L H L H

L H H H
H L L H
H L H H
H H L H
H H H L

NOTES:

H = High voltage level
L = Low voltage level

11

C2

SA00347

12

6

8

SV00059

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

14-Pin Plastic DIP –40°C to +85°C 74ABT10 N 74ABT10 N SOT27-1
14-Pin plastic SO –40°C to +85°C 74ABT10 D 74ABT10 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +85°C 74ABT10 DB 74ABT10 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT10 PW 74ABT10PW DH SOT402-1

1995 Sep 22 853-1810 15793

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

UNIT

74ABT10Triple 3-input NAND gate

ABSOLUTE MAXIMUM RATINGS

1, 2

SYMBOL PARAMETER CONDITIONS RATING UNIT

V

I

V

CC

I

IK

V

I

OK

OUT

OUT

T

stg

DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA

I

DC input voltage

3

–1.2 to +7.0 V
DC output diode current VO < 0 –50 mA
DC output voltage

3

output in Off or High state –0.5 to +5.5 V
DC output current output in Low state 40 mA
Storage temperature range –65 to 150 °C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

LIMITS

MIN MAX

V

CC

V
V
V
I

OH

I

OL

∆t/∆v Input transition rise or fall rate 0 10 ns/V

T

amb

DC supply voltage 4.5 5.5 V
Input voltage 0 V

I

High-level input voltage 2.0 V

IH

Low-level input voltage 0.8 V

IL

High-level output current –15 mA
Low-level output current 20 mA

Operating free-air temperature range –40 +85 °C

CC

V

DC ELECTRICAL CHARACTERISTICS

LIMITS

SYMBOL PARAMETER TEST CONDITIONS

V

V

V

I

OFF

I

CEX

I

∆I

Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V

IK

High-level output voltage VCC = 4.5V; IOH = –15mA; VI = VIL or V

OH

Low-level output voltage VCC = 4.5V; IOL = 20mA; VI = VIL or V

OL

I

Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA

I

IH

IH

Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA
Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V

I

Output current

O

Quiescent supply current VCC = 5.5V; VI = GND or V

CC

Additional supply current per

CC

input pin

1

2

VCC = 5.5V; VO = 2.5V –50 –75 –180 –50 –180 mA

VCC = 5.5V; One data input at 3.4V, other
inputs at VCC or GND

CC

CC

NOTES:

1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.

2. This is the increase in supply current for each input at 3.4V.

3. For valid test results, data must not be loaded into the flip-flop or latch after applying the power.

T

= +25°C

amb

MIN TYP MAX MIN MAX

2.5 2.9 2.5 V

0.35 0.5 0.5 V

5.0 50 50 µA

2 50 50 µA

0.25 500 500 µA

T

amb

to +85°C

= –40°C

UNIT

1995 Sep 22

3

Philips Semiconductors Product specification

74ABT10Triple 3-input NAND gate

AC CHARACTERISTICS

GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500Ω

LIMITS

T

= +25°C

SYMBOL PARAMETER

WAVEFORM

amb

VCC = +5.0V

MIN TYP MAX MIN MAX

t

PLH

t

PHL

t

OSHL

t

OSLH

Propagation delay
An, Bn, Cn to Yn

Output to Output skew

1

An or Bn to Yn

1

1.0

1.0

3.3

2.2

2 0.4 0.5 0.5 ns

NOTE:

1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same
device. The specification applies to any outputs switching in the the same direction, either HIGH–to-LOW (t
parameter guaranteed by design.

AC WAVEFORMS

VM = 1.5V, VIN = GND to 3.0V

4.7

3.3

T

= –40°C to +85°C

amb

VCC = +5.0V ±0.5V

1.0

1.0

) or LOW-to-HIGH (t

OSHL

5.3

3.7

UNIT

ns

OSLH

);

An, Bn, Cn

Yn

V

M

t

PHL

V

M

t

PLH

V

M

V

M

Waveform 1. Propagation Delay for Inverting Outputs

TEST CIRCUIT AND WAVEFORMS

V

CC

PULSE

GENERATOR

V

IN

R

D.U.T.

T

Test Circuit for Outputs

V

OUT

C

L

SA00357

R

L

INPUT

OUTPUT

OUTPUT N
same part

90%

NEGATIVE
PULSE

POSITIVE
PULSE

10%

t

PHL

MIN

t

PLH

MIN

t

PLH

MAX

t

OSLH

t

PHL

Waveform 2. Common edge skew

t

W

V

M

10% 10%

(tF)

t

THL

t

(tR)t

TLH

90% 90%

V

M

t

W

90%

V

M

V

M

10%

VM = 1.5V

MAX

t

OSHL

t

TLH

THL

SA00381

AMP (V)

0V

(tR)

(tF)

AMP (V)

0V

DEFINITIONS

RL = Load resistor; see AC CHARACTERISTICS for value.
C

= Load capacitance includes jig and probe capacitance;

L

see AC CHARACTERISTICS for value.

R

= Termination resistance should be equal to Z

T

pulse generators.

1995 Sep 22

OUT

of

FAMILY

74ABT

4

Input Pulse Definition

INPUT PULSE REQUIREMENTS

Amplitude Rep. Rate t

W

3.0V 1MHz 500ns 2.5ns

t

t

R

F

2.5ns

SH00067

Philips Semiconductors Product specification

74ABT10Triple 3-input NAND gate

DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1

1995 Sep 22

5

Philips Semiconductors Product specification

74ABT10Triple 3-input NAND gate

SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1

1995 Sep 22

6

Philips Semiconductors Product specification

74ABT10Triple 3-input NAND gate

SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm SOT337-1

1995 Sep 22

7

Philips Semiconductors Product specification

74ABT10Triple 3-input NAND gate

TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1

1995 Sep 22

8

Philips Semiconductors Product specification

74ABT10Triple 3-input NAND gate

DEFINITIONS

Data Sheet Identification Product Status Definition

Objective Specification

Preliminary Specification

Product Specification

Formative or in Design

Preproduction Product

Full Production

Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.

LIFE SUPPORT APPLICA TIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected

to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.

Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone [phone]

This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.

This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.

Philips Semiconductors and Philips Electronics North America Corporation

register eligible circuits under the Semiconductor Chip Protection Act.

 Copyright Philips Electronics North America Corporation 1995

All rights reserved. Printed in U.S.A.

(print code) Date of release: July 1994
Document order number: 9397-750-04851