Datasheet 70mt060w Datasheet

"Half Bridge" IGBT MTP (Warp 2 Speed IGBT), 70 A

MTP

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 2.1 V

V

CE(on)

at TC = 25 °C 70 A

I

C

600 V

70MT060WHTAPbF

Vishay High Power Products

FEATURES

• NPT warp 2 speed IGBT technology with
positive temperature coefficient

•HEXFRED
reverse recovery

• SMD thermistor (NTC)

•Al

2O3

• Very low stay inductance design for high speed operation

• UL pending

• Speed 60 kHz to 150 kHz

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Lower coduction losses and switching losses

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

®

antiparallel diodes with ultrasoft

BDC

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation, IGBT P

Document Number: 94469 For technical questions, contact: [email protected]
Revision: 01-Mar-10 1

CES

C

CM

LM

F

FM

GE

ISOL

D

TC = 25 °C 100

= 78 °C 70

T

C

TC = 78 °C 53

Any terminal to case, t = 1 min 2500

TC = 25 °C 347

T

= 100 °C 139

C

600 V

300

300

200

± 20

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A

V

W

70MT060WHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP

(Warp 2 Speed IGBT), 70 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Collector to emitter voltage V

Gate threshold voltage V

Collector to emitter leaking current I

Gate to emitter leakage current I

(BR)CESVGE

CE(on)

GE(th)IC

CES

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time td

Rise time t

Turn-off delay time td

Fail time t

Turn-on delay time td

Rise time t

Turn-off delay time td

Fail time t

Input capacitance C

Reverse transfer capacitance C

Reverse BIAS safe operating area RBSOA

g

ge

gc

on

off

ts

on

off

ts

on

r

off

f

on

r

off

f

ies

oes

res

= 0 V, IC = 500 μA 600 - - V

VGE = 15 V, IC = 70 A - 2.1 2.4

= 15 V, IC = 140 A - 2.8 3.4

V

GE

= 15 V, IC = 70 A, TJ = 150 °C - 2.7 3

V

GE

= 0.5 mA 3 - 6

VGE = 0 V, IC = 600 V - - 0.7

V

= 0 V, IC = 600 V, TJ = 150 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

IC = 70 A

= 480 V

V

CC

V

= 15 V

GE

Rg = 10 Ω
I

= 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH

C

Energy losses include tail and diode reverse
recovery, T

= 25 °C

J

Rg = 10 Ω
I

= 70 A, V

C

= 480 V, VGE = 15 V, L = 200 μH

CC

Energy losses include tail and diode reverse
recovery, T

= 150 °C

J

Rg = 10 Ω
I

= 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH

C

Energy losses include tail and diode reverse
recovery

Rg = 10 Ω

= 70 A, V

I

C

= 480 V, VGE = 15 V, L = 200 μH

CC

Energy losses include tail and diode reverse
recovery, T

= 150 °C

J

VGE = 0 V
V

= 30 V

CC

f = 1.0 MHz

= 150 °C, IC = 300 A

T

J

V

= 400 V, VP = 600 V

CC

= 22 Ω, VGE = + 15 V to 0 V

R

g

- 460 690

- 160 250

-70130

-1.1-

-0.9-

-2-

-1.27-

-1.13-

-2.4-

- 314 -

-49-

- 308 -

-68-

- 312 -

-50-

- 320 -

-78-

- 8000 -

- 790 -

- 110 -

Fullsquare

V

mA

nCGate to emitter charge (turn-on) Q

mJ

ns

pFOutput capacitane C

www.vishay.com For technical questions, contact: [email protected]

Document Number: 94469

2 Revision: 01-Mar-10

70MT060WHTAPbF

"Half Bridge" IGBT MTP

Vishay High Power Products

(Warp 2 Speed IGBT), 70 A

THERMISTOR SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Resistance R

Sensitivity index of the
thermistor material

0

(1)(2)

β

Notes

(1)

T0, T1 are thermistor´s temperatures

R

0

(2)

------ β
R

1

⎛⎞

-----

exp=

⎝⎠

T

1

1

, temperature in Kelvin

–

----­T

0

1

DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Diode forward voltage drop V

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

FM

rr

rr

rr

rr

rr

rr

T0 = 25 °C - 30 - kΩ

T0 = 25 °C
T

= 85 °C

1

- 4000 - K

IC = 70 A, VGE = 0 V - 1.64 2.1

= 140 A, V

C

= 70 A, VGE = 0 V, TJ = 150 °C - 1.69 1.9

I

C

= 0 V - 2.1 2.4

GE

- 96 126 ns
VCC = 200 V, IC = 70 A
dI/dt = 200 A/μs

- 9.4 12.8 A

- 440 750 nC

VCC = 200 V, IC = 70 A
dI/dt = 200 A/μs
T

= 125 °C

J

- 140 194 ns

-1419A

- 950 1700 nC

VI

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction
temperature range

Storage temperature range T

Junction to case

Case to sink per module R

IGBT, Diode

IGBT

R

T

J

Stg

thJC

thCS

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

A mounting compound is recommended and the

Mounting torque to heatsink

torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.

Weight 66 g

- 40 - 150

°CThermistor - 40 - 125

- 40 - 125

- - 0.36

°C/WDiode --0.8

3 ± 10 % Nm

Document Number: 94469 For technical questions, contact: [email protected]

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Revision: 01-Mar-10 3

70MT060WHTAPbF

Vishay High Power Products

(Warp 2 Speed IGBT), 70 A

1000

VGE = 15 V

100

10

- Collector to Emitter Current (A)

C

I

94469_01

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

94469_02

Fig. 2 - Maximum Collector Current vs. Case Temperature

TJ = 25 °C

1

0.0

1.0 2.0 3.0 4.0

TJ = 150 °C

VCE - Collector to Emitter Voltage (V)

Fig. 1 - Typical Output Characteristics

DC

0

20 40 60 80 100

0

Maximum DC Collector Current (A)

"Half Bridge" IGBT MTP

16

14

12

10

8

6

4

- Gate to Emitter Voltage (V)

2

GE

V

5.0

94469_04

120

94469_05

0

Fig. 4 - Typical Gate Charge vs. Gate to Emitter Votlage

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0

Fig. 5 - Maximum Forward Voltage Drop vs.

VCC = 480 V

200 400 600 800 10000

OG - Total Gate Charge (nC)

TJ = 150 °C

TJ = 25 °C

0.5 1.0 1.5 2.0 2.5 3.0

V

- Forward Voltage Drop (V)

FM

Instantaneous Forward Current

3.5

- Collector to Emitter Voltage (V)

CE

V

94469_03

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0
20 40 60 80 120100 140

IC = 140 A

IC = 70 A

IC = 30 A

TJ - Junction Temperature (°C)

Fig. 3 - Typical Collector to Emitter Voltage vs.

160

10

150 °C

1.0

0.1

0.01

0.001

- Collector to Emitter Current (mA)

0.0001

CES

I

94469_06

200

300 400 500

V

- Collector to Emitter Voltage (V)

CES

25 °C

Fig. 6 - Typical Zero Gate Voltage Collector Current

600

Junction Temperature

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Document Number: 94469

4 Revision: 01-Mar-10

70MT060WHTAPbF

(V)

GEth

V

94469_07

Energy (μJ)

4.5

4.0

3.5

3.0

2.5

0.1

25 °C

125 °C

IC (mA)

Fig. 7 - Typical Gate Threshold Voltage

1400

1200

1000

800

600

400

200

E

on

E

off

"Half Bridge" IGBT MTP

(Warp 2 Speed IGBT), 70 A

350

300

250

200

150

100

50

- Collector to Emitter Current (mA)

C

0

1.0

I

94469_10

(ns)
t

0

Fig. 10 - Reverse BIAS SOA, TJ = 150 °C

160

140

120

rr

100

80

Vishay High Power Products

100 200 300 400 500 600

IC - Collector to Emitter Voltage (V)

VR = 200 V

IF = 70 A, 125 °C

IF = 70 A, 25 °C

700

0

0

94469_08

20 40 60

IC - Collector to Emitter Current (A)

Fig. 8 - Typical Energy Losses vs. I

1000

t

f

100

Switching Time (ns)

10

0

94469_09

20 40 60

IC - Collector to Emitter Current (A)

Fig. 9 - Switching Time vs. I

60

80

94469_11

( TJ = 150 °C)

C

t

d(off)

t

r

t

d(on)

80

94469_12

C

100 1000

dIF/dt (A/µs)

Fig. 11 - Typical Reverse Recovery Time vs. dI

40

VR = 200 V

35

30

25

(A)

20

RRM

I

15

10

5

100 1000

IF = 70 A, 125 °C

IF = 70 A, 25 °C

dIF/dt (A/μs)

Fig. 12 - Typical Reverse Recovery Current vs. dI

/dt

F

/dt

F

Document Number: 94469 For technical questions, contact: [email protected]

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Revision: 01-Mar-10 5

70MT060WHTAPbF

Vishay High Power Products

2000

1800

1600

1400

1200

(nC)

rr

1000

Q

800

600

400

200

100 1000

94469_13

1

0.1

0.01

- Thermal Impedance (°C/W)

thJC

Z

0.001

0.00001

94469_14

Single pulse

(thermal resistance)

0.0001 0.001

Fig. 14 - Maximum Thermal Impedance Z

"Half Bridge" IGBT MTP

(Warp 2 Speed IGBT), 70 A

VR = 200 V

IF = 70 A, 125 °C

IF = 70 A, 25 °C

dIF/dt (A/μs)

Fig. 13 - Typical Stored Charge vs. dIF/dt

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

0.01 0.1 1.0

t1 - Rectangular Pulse Duration (s)

Characteristics (IGBT)

thJC

10

1.0

0.1

0.01

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.50
D = 0.33
D = 0.25
D = 0.20

- Thermal Impedance (°C/W)

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1 1.0

94469_15

Fig. 15 - Maximum Thermal Impedance Z

t1 - Rectangular Pulse Duration (s)

Characteristics (Diode)

thJC

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Document Number: 94469

6 Revision: 01-Mar-10

70MT060WHTAPbF

3, 4

11

12

5, 6

9

10

7, 8

Fig. 16 - Electrical Diagram Fig. 17 - Functional Diagram

Thermistor

ORDERING INFORMATION TABLE

Device code

70 MT 060 W H T A PbF

"Half Bridge" IGBT MTP

(Warp 2 Speed IGBT), 70 A

2

T

R

1

option

Vishay High Power Products

3, 4

10

11

12

9

10

Ω

10 Ω

10 Ω

10 Ω

7, 8

5, 6

CIRCUIT CONFIGURATION

51324678

1 - Current rating (70 = 70 A)

2 - Essential part number

3 - Voltage rating (060 = 600 V)

4 - Speed/type (W = Warp IGBT)

5 - Circuit configuration (H = Half bridge)

- T = Thermistor

6

- A = Al2O3 DBC substrate

7

- Lead (Pb)-free

8

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95175

Document Number: 94469 For technical questions, contact: [email protected]
Revision: 01-Mar-10 7

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DIMENSIONS in millimeters

Ø 1.1Ø 5

3.5

33

31.8

12 ± 0.5

4

20.5

2.5

876543

2

1

13

9

10 11

12

1.8

8.1

45°

5.4 ± 0.1

5.7 ± 0.1

1.2 ± 0.1

7.2 ± 0.1

7.8 ± 0.1

3 ± 0.1

27.5

11.35

± 0.1

11.35

± 0.1

R2.6 (x 3)

R5.8 (x 2)

8.7 ± 0.1

6 ± 0.1

3 ± 0.1

8.5 ± 0.1

39.5 ± 0.1

44.5

48.7

63.5 ± 0.25

1.3

Outline Dimensions

Vishay Semiconductors

MTP

Note

• Unused terminals are not assembled in the package

Document Number: 95175 For technical questions, contact: [email protected]
Revision: 18-Mar-08 1

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