Page 1
AP70L02GS/P
RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement R
▼ Fast Switching I
BV
DS(ON)
D
DSS
G
S
Description
The Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70L02GP) is available for low-profile applications.
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
I
=25℃ A
D@TC
=100℃ A
I
D@TC
I
DM
P
T
T
=25℃ W
D@TC
STG
J
Drain-Source Voltage 25
Gate-Source Voltage ±20
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation 66
Linear Derating Factor 0.53
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Parameter Rating
@ 10V
GS
@ 10V
GS
1
G
G
D
S
210
-55 to 150
66
42
D
S
25V
9mΩ
66A
TO-263(S)
TO-220(P)
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Unit
Rthj-case Thermal Resistance Junction-case Max. 1.9 ℃/W
Rthj-amb Thermal Resistance Junction-ambient Max. 62 ℃/W
Data & specifications subject to change without notice 200831073-1/6
Parameter
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AP70L02GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 25 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=1mA - 0.037 -V/℃
D
Static Drain-Source On-Resistance VGS=10V, ID=33A - - 9 mΩ
=4.5V, ID=20A - - 18 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=33A - 25 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
VDS=25V, VGS=0V - - 1
VDS=20V, VGS=0V - - 25
Gate-Source Leakage VGS=± 20V - - ±100
Total Gate Charge
2
ID=33A - 23
Gate-Source Charge VDS=20V - 3
Gate-Drain ("Miller") Charge VGS=5V - 17
Turn-on Delay Time
2
VDS=15V - 8.8 Rise Time ID=33A - 95 Turn-off Delay Time RG=3.3Ω,VGS=10V - 24 -
Fall Time RD=0.45Ω -14Input Capacitance VGS=0V - 790 Output Capacitance VDS=25V - 475 Reverse Transfer Capacitance f=1.0MHz - 195 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
I
SM
V
SD
Continuous Source Current ( Body Diode ) V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
1
=0V , VS=1.26V - - 66
D=VG
- - 210
Tj=25℃, IS=66A, VGS=0V - - 1.26 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
A
A
2/6
Page 3
AP70L02GS/P
I
250
V
=10V
TC=25oC
200
150
100
, Drain Current (A)
D
I
50
0
0123456
G
=8.0V
V
G
V
=6.0V
G
=5.0V
V
G
VG=4.0V
VDS , Drain-to-Source Voltage (V)
140
V
=10V
V
V
V
V
G
=8.0V
G
=6.0V
G
=5.0V
G
=4.0V
G
TC=150oC
120
100
80
60
, Drain Current (A)
D
I
40
20
0
0123456
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
23
T
D
c
=10A
=25
℃
Ω
21
19
17
)
15
(m
13
DS(ON)
R
11
9
7
5
234567891011
VGS (V)
1.8
=10A
I
D
1.6
VG=10V
1.4
DS(ON)
1.2
1
Normalized R
0.8
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3/6
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AP70L02GS/P
Sing
80
70
60
50
40
30
, Drain Current (A)
D
I
20
10
0
25 50 75 100 125 150
Tc , Case Temperature ( oC)
80
70
60
50
40
(W)
D
P
30
20
10
0
0 50 100 150
Tc ,Case Temperature ( oC)
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
1000
1
DUTY=0.5
)
thjc
100
(A)
D
I
10
Tc=25oC
le Pulse
1
1 10 100
10us
100us
1ms
10ms
100ms
VDS (V)
0.2
0.1
0.05
0.1
0.02
P
0.01
SINGLE PULSE
Normalized Thermal Response (R
0.01
0.00001 0.0001 0.001 0.01 0.1 1
DM
t
Duty factor = t/T
Peak Tj = PDM x R
T
t , Pulse Width (s)
+ T
thjc
C
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
4/6
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AP70L02GS/P
f
16
ID=33A
14
=20V
V
DS
12
10
8
6
, Gate to Source Voltage (V)
4
GS
V
2
0
0 5 10 15 20 25 30 35 40 45 50
QG , Total Gate Charge (nC)
10000
1000
C (pF)
100
1 6 11 16 21 26 31
VDS (V)
=1.0MHz
Ciss
Coss
Crss
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
100
10
=150oC
T
(A)
S
I
j
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Tj=25oC
VSD (V)
3
2
(V)
GS(th)
V
1
0
-50 0 50 100 150
Tj , Junction Temperature( oC)
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
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AP70L02GS/P
A
V
DS
R
D
90%
V
D
G
R
G
DS
TO THE
OSCILLOSCOPE
0.6 x RATED V
DS
10%
+
10 V
-
S
V
GS
V
GS
t
d(on)tr
t
d(off)
t
f
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
V
G
V
DS
TO THE
D
G
V
GS
+
-
1~ 3 m
I
G
S
I
D
OSCILLOSCOPE
0.8 x RATED V
5V
DS
Q
GS
Q
G
Q
GD
Charge
Q
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
6/6
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ADVANCED POWER ELECTRONICS CORP.
r
r
Package Outline : TO-263
E
E
b1
L2
L2
e
e
b1
b
b
L4
L4
SYMBOLS
A 4.25 4.75 5.20
A1 0.00 0.15 0.30
A2 2.20 2.45 2.70
D
D
L3
L3
b 0.70 0.90 1.10
b1 1.07 1.27 1.47
c 0.30 0.45 0.60
c1 1.15 1.30 1.45
D 8.30 8.90 9.40
E 9.70 10.10 10.50
e 2.04 2.54 3.04
L2 ----- 1.50 ----L3 4.50 4.90 5.30
L4 ----- 1.50 ----
Millimeters
MIN NOM MAX
A
A
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c1
c1
A1
A1
A2
A2
c
c
θ
θ
Part Marking Information & Packing : TO-263
Part Numbe
Part Numbe
Package Code
Package Code
XXXXXS
70L02GS
YWWSSS
YWWSSS
LOGO
Date Code (YWWSSS)
Y：Last Digit Of The Year
Y：Last Digit Of The Year
WW：Week
WW：Week
SSS：Sequence
SSS：Sequence
meet Rohs requirement
Page 8
ADVANCED POWER ELECTRONICS CORP.
q
Package Outline : TO-220
E1
L3
E
φ
L1
L2
L5
D
L4
b1
A
SYMBOLS
A 4.25 4.48 4.70
c1
L
b 0.65 0.80 0.90
b1 1.15 1.38 1.60
c 0.40 0.50 0.60
c1 1.00 1.20 1.40
E 9.70 10.00 10.40
E1 --- --- 11.50
e ---- 2.54 ----
L 12.70 13.60 14.50
L1 2.60 2.80 3.00
L2 1.00 1.40 1.80
L3 2.6 3.10 3.6
L4 14.70 15.50 16
L5 6.30 6.50 6.70
φ 3.50 3.60 3.70
D 8.40 8.90 9.40
Millimeters
MIN NOM MAX
b
c
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
70L02GP
LOGO
YWWSSS
meet Rohs requirement
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Se
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
uence
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