Datasheet 5962R9689104VYX, 5962R9689104VYC, 5962R9689104VYA, 5962R9689104VXX, 5962R9689104VXA Datasheet (UTMC)

1

Standard Products

UT28F256 Radiation-Hardened 32K x 8 PROM

Data Sheet

December 2002

FEATURES

q Programmable, read-only, asynchronous, radiation-

hardened, 32K x 8 memory

- Supported by industry standard programmer

q 45ns and 40ns maximum address access time (-55 oC to

+125 oC)

q TTL compatible input and TTL/CMOS compatible output

levels

q Three-state data bus
q Low operating and standby current

- Operating: 125mA maximum @25MHz

• Derating: 3mA/MHz

- Standby: 2mA maximum (post-rad)

q Radiation-hardened process and design; total dose

irradiation testing to MIL-STD-883, Method 1019

- Total dose: 1E6 rad(Si)

- LETTH(0.25) ~ 100 MeV-cm2/mg

- SEL Immune >128 MeV-cm2/mg

- Saturated Cross Section cm2 per bit, 1.0E-11

- 1.2E-8 errors/device-day, Adams 90% geosynchronous
heavy ion

- Memory cell LET threshold: >128 MeV-cm2/mg

q QML Q & V compliant part

- AC and DC testing at factory

q Packaging options:

- 28-lead 50-mil center flatpack (0.490 x 0.74)

- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

q VDD: 5.0 volts + 10%
q Standard Microcircuit Drawing 5962-96891

PRODUCT DESCRIPTION

The UT28F256 amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened,
32K x 8 programmable memory device. The UT28F256 PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the UT28F256.
The combination of radiation-hardness, fast access time, and low
power consumption make the UT28F256 ideal for high speed
systems designed for operation in radiation environments.

A(14:0)

CE

PE

OE

DECODER

CONTROL

LOGIC

MEMORY

ARRAY

SENSE AMPLIFIER

DQ(7:0)

PROGRAMMING

Figure 1. PROM Block Diagram

DEVICE OPERATION

PIN NAMES

The UT28F256 has three control inputs: Chip Enable (CE),
Program Enable (PE), and Output Enable (OE); fifteen address
inputs, A(14:0); and eight bidirectional data lines, DQ(7:0). CE
is the device enable input that controls chip selection, active, and
standby modes. Asserting CE causes IDD to rise to its active value

and decodes the fifteen address inputs to select one of 32,768
words in the memory. PE controls program and read operations.
During a read cycle, OE must be asserted to enable the outputs.

PIN CONFIGURATION

A14

A12

A7
A6

A5
A4
A3
A2
A1

A0

DQ0
DQ1

DQ2

V

SS

1
2
3
4
5
6
7
8
9
10
11
12
13
14

28
27
26
25
24
23
22
21
20
19
18
17
16
15

V

DD

PE
A13
A8
A9

A11
OE
A10
CE
DQ7
DQ6

DQ5
DQ4

DQ3

A(14:0) Address

CE Chip Enable
OE Output Enable

PE Program Enable

DQ(7:0) Data Input/Data Output

Table 1. Device Operation Truth Table

OE PE CE I/O MODE MODE

X 1 1 Three-state Standby

0 1 0 Data Out Read
1 0 0 Data In Program
1 1 0 Three-state

Notes:

1. “X” is defined as a “don’t care” condition.

2. Device active; outputs disabled.

1

Read

2

ABSOLUTE MAXIMUM RATINGS

1

(Referenced to VSS)

SYMBOL PARAMETER LIMITS UNITS

V

DD

V

I/O

T

STG

P

D

T

J

Θ

JC Thermal resistance, junction-to-case

I

I

Notes:

1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

2. Test per MIL-STD-883, Method 1012, infinite heat sink.

DC supply voltage -0.3 to 7.0 V

Voltage on any pin -0.5 to (V

+ 0.5) V

DD

Storage temperature -65 to +150 °C
Maximum power dissipation 1.5 W
Maximum junction temperature +175 °C

2

DC input current

3.3 °C/W

±10

mA

2

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNITS

V

DD

T

C

V

IN

Positive supply voltage 4.5 to 5.5 V
Case temperature range -55 to +125 °C

DC input voltage 0 to V

DD

V

DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*

(V

= 5.0V ±10%; -55 °C < TC < +125 °C)

DD

SYMBOL PARAMETER CONDITION MINIMUM MAXIMUM UNIT

V

V

V

V

C

V

V

OH1

OH2

IN

IH

IL

OL1

OL2

High-level input voltage (TTL) 2.4 V
Low-level input voltage (TTL) 0.8 V

Low-level output voltage IOL = 4.0mA, V

Low-level output voltage IOL = 200µA, VDD = 4.5V (CMOS) V

= 4.5V (TTL) 0.4 V

DD

+ 0.10 V

SS

High-level output voltage IOH = -200µA, VDD = 4.5V (CMOS) VDD -0.1 V

High-level output voltage IOH = -2.0mA, VDD = 4.5V (TTL) 2.4 V

1

Input capacitance ƒ = 1MHz, VDD = 5.0V

V

= 0V

IN

15 pF

1, 4

C

IO

I

IN

I

OZ

Bidirectional I/O capacitance ƒ = 1MHz, VDD = 5.0V

V

= 0V

OUT

Input leakage current VIN = 0V to V
Three-state output leakage

current

VO = 0V to VDD
VDD = 5.5V

DD

-10 10 µA

OE = 5.5V

2,3

I

OS

I

(OP)

DD1

I

(SB)

DD2

post-rad

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rad(Si).

1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.

2. Supplied as a design limit but not guaranteed or tested.

3. Not more than one output may be shorted at a time for maximum duration of one second.

4. Functional test.

5. Derates at 3.0mA/MHz.

Short-circuit output current VDD = 5.5V, VO = V

VDD = 5.5V, VO = 0V

5

Supply current operating
@25.0MHz (40ns product)

@22.2MHz (45ns product)

TTL inputs levels (I

0.2V
VDD, PE = 5.5V

Supply current standby CMOS input levels VIL = VSS +0.25V

CE = V

- 0.25 V

DD

DD

= 0), V

OUT

= VDD - 0.25V

IH

IL

-90

=

15 pF

-5 5 µA

90 mA

mA

125
117

mA
mA

2 mA

3

READ CYCLE

A combination of PE greater than VIH(min), and CE less than
VIL(max) defines a read cycle. Read access time is measured
from the latter of device enable, output enable, or valid address

to valid data output.
An address access read is initiated by a change in address inputs

while the chip is enabled with OE asserted and PE deasserted.
Valid data appears on data output, DQ(7:0), after the specified
t

is satisfied. Outputs remain active throughout the entire

AVQV

cycle. As long as device enable and output enable are active, the
address inputs may change at a rate equal to the minimum read
cycle time.

AC CHARACTERISTICS READ CYCLE (Post-Radiation)*

(V

= 5.0V ±10%; -55 °C < TC < +125 °C)

DD

SYMBOL PARAMETER 28F256-45

The chip enable-controlled access is initiated by CE going active
while OE remains asserted, PE remains deasserted, and the
addresses remain stable for the entire cycle. After the specified
t

is satisfied, the eight-bit word addressed by A(14:0)

ELQV

appears at the data outputs DQ(7:0).
Output enable-controlled access is initiated by OE going active

while CE is asserted, PE is deasserted, and the addresses are
stable. Read access time is t

GLQV

unless t

AVQV

or t

ELQV

have

not been satisfied.

MIN MAX

28F256-40

MIN MAX

UNIT

1

t

AVAV

t

AVQV

2

t

AXQX

2

t

GLQX

t

GLQV

t

GHQZ

t

ELQX2

t

ELQV

t

EHQZ

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rads(Si).

1. Functional test.

2. Three-state is defined as a 400mV change from steady-state output voltage.

OE-controlled output enable time 0 0 ns

OE-controlled output three-state time 15 15 ns

CE-controlled output enable time 0 0 ns

CE-controlled output three-state time 15 15 ns

Read cycle time 45 40 ns

Read access time 45 40 ns
Output hold time 0 0 ns

OE-controlled access time 15 15 ns

CE-controlled access time 45 40 ns

4

A(14:0)

CE

OE

DQ(7:0)

t

GLQX

t

AVAV

t

ELQX

t

AVQV

t

ELQV

t

GLQV

t

AVQV

t

AXQX

Figure 2. PROM Read Cycle

t

EHQZ

t

GHQZ

RADIATION HARDNESS

maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all

The UT28F256 PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose

radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.

radiation hardness of both the gate oxide and the field oxide while

RADIATION HARDNESS DESIGN SPECIFICATIONS

1

Total Dose 1E6 rad(Si)
Latchup LET Threshold >128

Memory Cell LET Threshold >128

Transient Upset LET Threshold 54

Transient Upset Device Cross Section @ LET=128 MeV-cm2/mg

Note:

1. The PROM will not latchup during radiation exposure under recommended operating conditions.

1E-6

MeV-cm2/mg

MeV-cm2/mg

MeV-cm2/mg

cm

2

5

330 ohms

TTL

3.0V

90%

50pF

V

=1.73V

REF

10%

0V

Notes:

1. 50pF including scope probe and test socket.

2. Measurement of data output occurs at the low to high or high to low transition mid-point
(TTL input = 1.5V).

Figure 3. AC Test Loads and Input Waveforms

90%

10%

< 5ns < 5ns

Input
Pulses

6

0.015

k

0.008

26 PLACES

0.050 BSC
e

k

0.015

0.008

PIN NO. 1 ID.

6

-A-

0.022

b

7

A

0.115

0.045

-C­Q

Notes:

1. All exposed metalized areas to be plated per MIL-PRF-38535.

2. The lid is connected to VSS.

3. Lead finishes are in accordance with MIL-PRF-38535.

4. Dimension letters refer to MIL-STD-1835.

5. Lead position and coplanarity are not measured.

6. ID mark symbol is vendor option.

7. With solder, increase maximum by 0.003.

8. Total weight is approximately 2.4 grams.

0.015

0.045

0.026

28 PLACES

H A-B D 5S S0.010 M

L

0.370

0.250

Figure 5. 28-Lead 50-mil Center Flatpack (0.490 x 0.74)

E1

0.550 MAX

TOP VIEW

E

0.520

0.460

E2

0.180 MIN

END VIEW

-D-

E3

0.030 MIN

H A-B D5S SM0.036

7

-B-

D

0.740 MAX

S1
(4) PLACES

0.000 MIN.

c

0.009

0.004

-H-

0.040

7

ORDERING INFORMATION

256K PROM: SMD

5962 * 96891 * * * *

Lead Finish:
(A) = Solder
(C) = Gold

(X) = Optional

Case Outline:
(Y) = 28-pin DIP (contact factory)
(X) = 28-lead Flatpack

Class Designator:
(Q) = Class Q
(V) = Class V

Device Type
(03) = 45ns Access Time, TTL inputs, CMOS/TTL compatible outputs
(04) = 40ns Access Time, TTL inputs, CMOS/TTL compatible outputs

Drawing Number: 96891

Total Dose:
(F) = 3E5 rads(Si)
(G) = 5E5 rads(Si)
(H) = 1E6 rads(Si)
(R) = 1E5 rads(Si)

Federal Stock Class Designator: No options

Notes:

1. Lead finish (A, C, or X) must be specified.

2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold).

3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening.

4. Check factory for availability of 45ns part.

5. Lead finish: Factory programming either solder or gold. Field programming gold only.

8

256K PROM

UT **** *** - * * * * * *

Total Dose:
( ) = Total dose characteristics neither tested nor guaranteed

Lead Finish:
(A) = Solder
(C) = Gold
(X) = Optional

Screening:
(C) = Mil Temp

(P) = Prototype

Package Type:
(P) = 28-lead DIP (contact factory)
(U) = 28-lead Flatpack

Access Time:
(40) = 40ns access time, TTL compatible inputs, CMOS/TTL compatible outputs
(45) = 45ns access time, TTL compatible inputs, CMOS/TTL compatible outputs

Device Type Modifier:
(T) = TTL compatible inputs and CMOS/TTL compatible outputs

Device Type:
(28F256) = 32Kx8 One Time Programmable PROM

Notes:

1. Lead finish (A,C, or X) must be specified.

2. If an “X” is specified when ordering, then the part marking will match the lead finish and will be either “A” (solder) or “C” (g old).

3. Military Temperature Range flow per UTMC Manufacturing Flows Document. Radiation characteristics are neither tested nor guaranteed and may
not be specified.

4. Prototype flow per UTMC Manufacturing Flows Document. Devices have prototype assembly and are tested at 25°C only. Radiation characteristics
are neither tested nor guaranteed and may not be specified.

5. Check factory for availability of 45ns part.

6. Lead finish: Factory programming either solder or gold. Field programming gold only.

9

Notes

10

Notes

11