4
DC ELECTRICAL CHARACTERISTICS
1
(VDD = 3.0V to 0.3V ; -55°C < TC < +125°C)
Notes:
1. Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenc ed to ground.
2. Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. Only one output should be shorted at a time, do not exceed
maximum junction temperature specification.
3. Guaranteed by characterization.
SYMBOL PARAMETER CONDITION MIN MAX UNIT
CMOS/TTL DC SPECIFICATIONS (PWR DWN, RXOUT)
V
IH
High-level input voltage 2.0 V
DD
V
V
IL
Low-level input voltage GND 0.8 V
V
OL
Low-level output voltage IOL = 2mA 0.3 V
V
OH
High-level output voltage IOL = -0.4mA 2.7 V
I
IH
High-level input current VIN=3.6V; VDD = 3.6V -10 +10 µA
I
IL
Low-level input current VIN=0V; VDD = 3.6V -10 +10 µA
V
CL
Input clamp voltage ICL = -18mA -1.5 V
I
CS
Cold spare leakage current VIN=3.6V; VDD = V
SS
-20 +20 µA
I
OS
2, 3
Output short circuit current V
OUT
= 0V -15 -130 mA
LVDS RECEIVER DC SPECIFICATIONS (IN+, IN-)
V
ΤΗ
3
Differential input high threshold VCM = +1.2V +100 mV
V
ΤL
3
Differential input low threshold VCM = +1.2V -100 mV
V
CMR
Common mode voltage range VID=210mV 0.2 2.00 V
I
IN
Input current VIN = +2.4V, VDD = 3.6V -10 +10 µA
VIN = 0V, VDD = 3.6V -10 +10 µA
I
CSIN
Cold spare leakage current VIN = 3.6V, VDD = V
SS
-20 +20 µA
Supply Current
I
CC
3
Active supply current CL=8pF (see Figure 4) 105 mΑ
I
CCPD
Power down supply current PWR DWN = Low, LVDS inputs =
logic low
2.0 mA