FEATURES
High CMRR: 100 dB Typ
Low Nonlinearity: 0.001% Max
Low Distortion: 0.001% Typ
Wide Bandwidth: 3 MHz Typ
Fast Slew Rate: 9.5 V/ms Typ
Fast Settling (0.01%): 1 ms Typ
Low Cost
APPLICATIONS
Summing Amplifiers
Instrumentation Amplifiers
Balanced Line Receivers
Current-Voltage Conversion
Absolute Value Amplifier
4 mA–20 mA Current Transmitter
Precision Voltage Reference Applications
Lower Cost and Higher Speed Version of INA105
GENERAL DESCRIPTION
The AMP03 is a monolithic unity-gain, high speed differential
amplifier. Incorporating a matched thin-film resistor network,
the AMP03 features stable operation over temperature without
requiring expensive external matched components. The AMP03
is a basic analog building block for differential amplifier and
instrumentation applications.
The differential amplifier topology of the AMP03 serves to both
amplify the difference between two signals and provide extremely
high rejection of the common-mode input voltage. By providing
common-mode rejection (CMR) of 100 dB typical, the AMP03
solves common problems encountered in instrumentation design.
As an example, the AMP03 is ideal for performing either addition or subtraction of two signals without using expensive
externally-matched precision resistors. The large commonmode rejection is made possible by matching the internal resistors
to better than 0.002% and maintaining a thermally symmetric
layout. Additionally, due to high CMR over frequency, the
AMP03 is an ideal general amplifier for buffering signals in a
noisy environment into data acquisition systems.
The AMP03 is a higher speed alternative to the INA105. Fea-
turing slew rates of 9.5 V/µs, and a bandwidth of 3 MHz, the
AMP03 offers superior performance for high speed current
sources, absolute value amplifiers and summing amplifiers than
the INA105.
Differential Amplifier
AMP03
FUNCTIONAL BLOCK DIAGRAM
AMP03
AMP03
AMP03
NC
8
4
V–
25kV
25kV
8
7
6
5
8
7
6
5
NC
V+
OUTPUT
SENSE
NC
V+
OUTPUT
SENSE
7 V+
6 OUTPUT
5 SENSE
5
SENSE
+V
7
CC
6
OUTPUT
–V
4
EE
1
REFERENCE
25kV
2
–IN
25kV
+IN
3
PIN CONNECTIONS
8-Lead Plastic DIP
(P Suffix)
REFERENCE
1
2
–IN
TOP VIEW
(Not to Scale)
3
+IN
4
V–
NC = NO CONNECT
8-Lead SOIC
(S Suffix)
REFERENCE
1
2
–IN
TOP VIEW
(Not to Scale)
3
+IN
4
V–
NC = NO CONNECT
Header
(J Suffix)
REFERENCE 1
–IN 2
+IN 3
NC = NO CONNECT
REV. E
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Common-Mode RejectionCMRV
Power Supply Rejection Ratio PSRRV
Output SwingV
Short-Circuit Current LimitI
O
SC
= ±10 V8510080958095dB
CM
= ±6 V to ±18 V0.6100.6100.710µV/V
S
R
= 2 kΩ±12±13.7±12±13.7±12±13.7V
L
Output Shorted
to Ground+45/–15+45/–15+45/–15mA
Small-Signal Bandwidth
(–3 dB)BWR
Slew RateSRR
= 2 kΩ333MHz
L
= 2 kΩ69.569.569.5V/µs
L
Capacitive Load Drive
CapabilityC
Supply CurrentI
NOTES
1
Input voltage range guaranteed by CMR test.
Specifications subject to change without notice.
L
SY
ELECTRICAL CHARACTERISTICS
No Oscillation300300300pF
No Load2.53.52.53.52.53.5mA
(@ V
= 615 V, –558C ≤ TA ≤ +1258C for B Grade)
S
AMP03B
ParameterSymbolConditionsMinTypMaxUnits
Offset VoltageV
OS
Gain ErrorNo Load, V
V
= 0 V–15001501500µV
CM
= ±10 V, RS = 0 Ω0.00140.02%
IN
Input Voltage RangeIVR±20V
Common-Mode RejectionCMRV
= ±10 V7595dB
CM
Power Supply Rejection
RatioPSRRV
Output SwingV
O
Slew RateSRR
Supply CurrentI
Specifications subject to change without notice.
SY
= ±6 V to ±18 V0.720µV/V
S
R
= 2 kΩ±12±13.7V
L
= 2 kΩ9.5V/µs
L
No Load3.04.0mA
ELECTRICAL CHARACTERISTICS
(@ V
= 615 V, –408C ≤ TA ≤ +858C for F and G Grades)
S
AMP03FAMP03G
ParameterSymbolConditions MinTypMaxMinTypMaxUnits
Offset VoltageV
OS
Gain ErrorNo Load, V
V
= 0 V–1000 1001000–2000 2002000µV
CM
= ±10 V, RS = 0 Ω0.0008 0.0150.0020.02%
IN
Input Voltage RangeIVR±20± 20V
Common-Mode RejectionCMRV
= ±10 V80957590dB
CM
Power Supply Rejection
RatioPSRRV
Output SwingV
O
Slew RateSRR
Supply CurrentI
Specifications subject to change without notice.
SY
= ±6 V to ±18 V0.7151.015µV/V
S
R
= 2 kΩ±12±13.7±12±13.7V
L
= 2 kΩ9.59.5V/µs
L
No Load2.64.02.64.0mA
–2–
REV. E
Page 3
AMP03
1. Reference
2. –IN
3. +IN
4. V–
5. SENSE
6. OUTPUT
7. V+
8. NC
DIE SIZE 0.076 3 0.076 inch, 5,776 sq. mils
(1.93 3 1.93 mm, 3.73 sq. mm)
AMP03
+15V
–15V
0.1mF
0.1mF
VIN = 610V
V
OUT
= 610V
WAFER TEST LIMITS
(@ VS = 615 V, TA = +258C, unless otherwise noted)
AMP03BC
ParameterSymbolConditionsLimitUnits
V
Offset VoltageV
OS
Gain ErrorNo Load, V
= ±18 V0.5mV max
S
= ±10 V, RS = 0 Ω0.008% max
IN
Input Voltage RangeIVR±10V min
Common-Mode RejectionCMRV
Power Supply Rejection RatioPSRRV
Output SwingV
Short-Circuit Current LimitI
Supply CurrentI
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
For supply voltages less than ±18 V, the absolute maximum input voltage is equal
to the supply voltage.
3
θJA is specified for worst case mounting conditions, i.e., θJA is specified for device
in socket for header and plastic DIP packages and for device soldered to printed
circuit board for SOIC package.
ORDERING GUIDE
1
TemperaturePackagePackage
ModelRangeDescriptionOption
AMP03GP–40°C to +85°C 8-Lead Plastic DIP N-8
AMP03BJ–40°C to +85°C HeaderH-08B
AMP03FJ–40°C to +85°C HeaderH-08B
AMP03BJ/883C–55°C to +125°C HeaderH-08B
AMP03GS–40°C to +85°C 8-Lead SOICSO-8
AMP03GS-REEL–40°C to +85°C 8-Lead SOICSO-8
5962-9563901MGA –55°C to +125°C HeaderH-08B
AMP03GBCDie
NOTES
1
Burn-in is available on commercial and industrial temperature range parts in
plastic DIP and header packages.
2
For devices processed in total compliance to MIL-STD-883, add /883 after
part number. Consult factory for /883 data sheet.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AMP03 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. E
BURN-IN CIRCUIT
25kV
2
SLEW RATE TEST CIRCUIT
–3–
+18V
AMP03
25kV25kV
–18V
WARNING!
ESD SENSITIVE DEVICE
Page 4
AMP03–Typical Performance Characteristics
Figure 1. Small Signal Transient
Response
Figure 4. Large Signal Transient
Response
120
110
100
90
80
70
60
50
40
30
20
COMMON-MODE REJECTION – dB
10
0
1101M1001k10k 100k
FREQUENCY – Hz
TA = +258C
= 615V
V
S
Figure 2. Common-Mode Rejection
vs. Frequency
120
110
100
90
80
70
60
50
40
30
20
POWER SUPPLY REJECTION – dB
10
0
1101M1001k10k 100k
FREQUENCY – Hz
+PSRR
TA = +258C
= 615V
V
S
–PSRR
Figure 5. Power Supply Rejection
vs. Frequency
0.1
TA = +258C
= 615V
V
S
= –1
A
V
0.010
RL = 600V
THD+N – %
0.001
RL = 100kV
0.0001
2010020k
FREQUENCY – Hz
1k10k
Figure 3. Total Harmonic Distortion
vs. Frequency
0.1
TA = +258C
= 615V
V
S
= –1
A
V
0.010
DIM – %
0.001
0.0001
2k50k
RL = 600V, 100kV
FREQUENCY – Hz
10k
Figure 6. Dynamic Intermodulation
Distortion vs. Frequency
1000
VS = 615V
800
600
400
200
0
–200
–400
INPUT OFFSET VOLTAGE – mV
–600
–800
–75 –50150–25 0 2575 100 12550
TEMPERATURE – 8C
Figure 7. Input Offset Voltage vs.
Temperature
50
TA = +25°C
40
= 615V
V
S
30
20
10
0
–10
CLOSED-LOOP GAIN – dB
–20
–30
1001k10M10k100k1M
FREQUENCY – Hz
Figure 8. Closed-Loop Gain vs.
Frequency
–4–
10
TA = +25°C
= 615V
V
S
8
6
4
OUTPUT IMPEDANCE – V
2
0
1001k1M10k100k
FREQUENCY – Hz
Figure 9. Closed-Loop Output Impedance vs. Frequency
REV. E
Page 5
AMP03
0.003
VS = 615V
= 0V
R
S
0.002
0.001
0.000
–0.001
GAIN ERROR – %
–0.002
–0.003
–75 –50100–250 255075
TEMPERATURE – 8C
125 150
Figure 10. Gain Error vs. Temperature
4
TA = +258C
3
2
1
SUPPLY CURRENT – mA
0
065620610615
SUPPLY VOLTAGE – Volts
Figure 13. Supply Current vs. Supply
Voltage
13
VS = 615V
= 2kV
R
L
12
11
10
9
SLEW RATE – V/ms
8
7
6
–75 –50125–25 0 25 50 75 100
TEMPERATURE – 8C
Figure 11. Slew Rate vs. Temperature
17.5
15.0
12.5
10.0
7.5
5.0
2.5
MAXIMUM OUTPUT VOLTAGE – Volts
0
063612182430
VS = 618V
VS = 615V
VS = 612V
VS = 69V
VS = 65V
OUTPUT SOURCE CURRENT – mA
TA = +258C
Figure 14. Maximum Output Voltage
vs. Output Current (Source)
6
VS = 615V
5
4
3
2
SUPPLY CURRENT – mA
1
0
–75 –50125–25 0 25 50 75 100
TEMPERATURE – 8C
150
Figure 12. Supply Current vs.
Temperature
–17.5
–15.0
–12.5
–10.0
–7.5
–5.0
–2.5
MAXIMUM OUTPUT VOLTAGE – Volts
0
0–2–12–4–6
VS = 618V
VS = 615V
VS = 612V
VS = 69V
VS = 65V
TA = +258C
OUTPUT SINK CURRENT – mA
–8
–10
Figure 15. Maximum Output Voltage
vs. Output Current (Sink)
Figure 20. AMP03 Serves to Reject Common-Mode Volt ages in Instrumentation Systems. Common-Mode Volt ages Occur Due to Ground Current Returns. V
Must Be Within the Common-Mode Range of AMP03.
E
CM
SIGNAL
and
APPLICATION CIRCUITS
AMP03
R
1
3
25kV
R
25kV
2
E0 = E2–E
1
4
–IN E
+IN E
R
1
2
25kV
R
25kV
APPLICATIONS INFORMATION
The AMP03 represents a versatile analog building block. In
order to capitalize on fast settling time, high slew rate and high
CMR, proper decoupling and grounding techniques must be
employed. Figure 20 illustrates the use of 0.1 µF decoupling
capacitors and proper ground connections.
MAINTAINING COMMON-MODE REJECTION
In order to achieve the full common-mode rejection capability
of the AMP03, the source impedance must be carefully controlled. Slight imbalances of the source resistance will result in a
degradation of DC CMR—even a 5 Ω imbalance will degrade
CMR by 20 dB. Also, the matching of the reactive source impedance must be matched in order to preserve the CMRR over
frequency.
+15V
0.1mF
REF10
AMP03
+5V OUT
–5V OUT
Figure 21. Precision Difference Amplifier. Rejects
Common-Mode Signal = (E