Datasheet 54mtxxx Datasheet

Bulletin I27504 08/97

MT..KB SERIES

THREE PHASE AC SWITCH

Features

Package fully compatible with the industry standard INT-A-pak
power modules series

High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 V
UL E78996 approved

isolating voltage

RMS

Description

A range of extremely compact, encapsulated three phase
AC-switches offering efficient and reliable operation. They
are intended for use in general purpose and heavy duty
applications as control motor starter.

Major Ratings and Characteristics

Power Modules

50 A
90 A

100 A

Parameters 54MT.KB 94MT.KB 104MT.KB Units

I

O

@ T

C

I

@ 50Hz 390 950 1130 A

FSM

@ 60Hz 410 1000 1180 A

I2t @ 50Hz 770 4525 6380 A2s

@ 60Hz 700 4130 5830 A2s

I2√t 7700 45250 63800 A2√s
V

range 800 to 1600 V

RRM

T

range - 40 to 125 °C

STG

TJrange - 40 to 125 °C

50 90 100 A
80 80 80 °C

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1

54-94-104MT..KB Series

Bulletin I27504 08/97

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

Type number Code repetitive peak non-repetitive peak peak off-state voltage,

80 800 900 800

100 1000 1100 1000

54MT..KB 120 1200 1300 1200 20 *

140 1400 1500 1400
160 1600 1700 1600

80 800 900 800

100 1000 1100 1000

94/104MT..KB 12 0 1200 1300 1200 40 *

140 1400 1500 1400
160 1600 1700 1600

* For single AC switch

Forward Conduction

Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions

IOMaximum I

@ Case temperature 80 80 80 °C
Maximum peak, one-cycle 3 9 0 9 5 0 1130 A t = 10ms No voltage

I

TSM

forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied
on state surge current 330 800 95 0 t = 10ms 100% V

2

t Maximum I2t for fusing 770 4525 6380 A2s t = 10ms No voltage TJ = TJ max.

I

2

√t Maximum I2√t for fusing 7700 45250 63800 A2√s t = 0.1 to 10ms, no voltage reapplied

I

Low level value of threshold 1.16 0.99 0.99 V (16.7% x π x I

V

T(TO)1

voltage
High level value of threshold 1.44 1.19 1.15 (I > π x I

V

T(TO)2

voltage
Low level value on-state 12.54 4.16 3.90 mΩ (16.7% x π x I

r

t1

slope resistance
High level value on-state 11.00 3.56 3.48 (I > π x I

r

t2

slope resistance
Maximum on-state voltage drop 2.68 1.55 1.53 V Ipk = 150A, TJ = 25°C

V

TM

di/dt Max. non-repetitive rate 150 A/µs T

of rise of turned on current I
Max. holding current 200 TJ = 25oC, anode supply = 6V,

I

H

Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load

I

L

output current 5 0 90 100 A For all conduction angle

RMS

, maximum V

RRM

, maximum V

RSM

, max. repetitive I

DRM

RRM /IDRM

@ TJ = 125°C

reverse voltage reverse voltage gate open circuit

VVVmA

345 840 1000 t = 8.3ms reapplied Initial

700 4130 5830 t = 8.3ms reapplied
540 3200 4510 t = 10ms 100% V
500 2920 4120 t = 8.3ms reapplied

(AV)

T

(AV)

T

= 400µs single junction

t

p

= 25oC, from 0.67 V

J

= 500mA,tr < 0.5 µs, tp > 6 µs

g

mA resistive load, gate open circuit

RRM

RRM

< I < π x I

T(AV)

), @ TJ max.

< I < π x I

(AV)

T

), @ TJ max.

DRM

), @ TJ max.

T(AV)

), @ TJ max.

(AV)

T

, I

= π x I

TM

max.

T(AV)

,

2

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54-94-104MT..KB Series

Bulletin I27504 08/97

Blocking

Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions

V

RMS isolation voltage 4000 V TJ = 25oC all terminal shorted

INS

dv/dt Max. critical rate of rise 500 V/µs T

of off-state voltage (*) gate open circuit

(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 104MT160KBS90.

Triggering

Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions

PGMMax. peak gate power 10 W TJ = TJ max.

Max. average gate power 2.5

P

G(AV)

Max. peak gate current 2.5 A

I

GM

Max. peak negative 10 V

-V

GT

gate voltage
Max. required DC gate 4.0 V TJ = - 40°C Anode supply = 6V, resistive load

V

GT

voltage to trigger 2.5 T

1.7 T

Max. required DC gate 270 TJ = - 40°C Anode supply = 6V, resistive load

I

GT

current to trigger 150 mA T

80 T

Max. gate voltage 0.25 V @ TJ = TJ max., rated V

V

GD

that will not trigger
Max. gate current 6 mA

I

GD

that will not trigger

f = 50Hz, t = 1s

= TJ max., linear to 0.67 V

J

= 25°C

J

= 125°C

J

= 25°C

J

= 125°C

J

DRM

DRM

applied

,

Thermal and Mechanical Specifications

Parameter 54MT.KB 94MT.KB 104MT.KB Units Conditions

TJMax. junction operating -40 to 125 °C

temperature range
Max. storage temperature -40 to 125 °C

T

stg

range
Max. thermal resistance, 0.52 0.39 0.34 K/W DC operation per single AC switch

R

thJC

junction to case 1.05 0.77 0.69 DC operation per junction

0.56 0.40 0.36 180° Sine cond. angle per single AC switch

1.12 0.80 0.72 180° Sine cond. angle per junction

Max. thermal resistance, 0.03 K/W Per module

R

thCS

case to heatsink Mounting surface smooth, flat and greased

T Mounting to heatsink 4 to 6 Nm

torque ± 10% to terminal 3 to 4

wt Approximate weight 225 g

A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.

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3

54-94-104MT..KB Series

Bulletin I27504 08/97

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance R

Devices Units

54MT.KB 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 K/W
94MT.KB 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100

104MT.KB 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082

Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.

o

180o120

o

90

60

Ordering Information Table

Device Code

10 4 MT 160 K B S90

when devices operate at different conduction angles than DC)

thJC

o

o

30

180

o

120

o

o

90

o

60

o

30

1 23

4

1- Current rating code: 5 = 50 A (Avg)

9 = 90 A (Avg)
10 = 100 A (Avg)

2 - AC Switch
3 - Essential part number
4 - Voltage code: Code x 10 = V

(See Voltage Ratings Table)

RRM

5 - Generation II
6 - Critical dv/dt: None = 500V/µs (Standard value)

S90 = 1000V/µs (Special selection)

5

6

NOTE: To order the Optional Hardware see Bulletin I27900

4

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Outline Table (with optional barriers)

54-94-104MT..KB Series

Bulletin I27504 08/97

All dimensions in millimeters (inches)

Outline Table (without optional barriers)

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All dimensions in millimeters (inches)

5

54-94-104MT ..KB Series

Bulletin I27504 08/97

130

54MT..KB Series

120

Device Fully Turned-on

110

100

Per Single AC Switch

90

80

70

For all Conduction Angles

Maximum Allowable Case Temperature (°C)

60

0 102030405060

R M S O utp ut Cur r ent (A)

Fig. 1 - Current Ratings Characteristic

350

54MT..KB Series
T = 125°C

300

Device Fully
Turned-on

250

J

180°

120°

90°
60°
30°

200

150

(Per Total Module)

Conduction Angle

100

Maximum Total Power Loss (W)

50

1000

T = 25°C

J

T = 125°C

100

J

10

54MT..KB Series

Ins tantan eou s On -state C u rre n t ( A)

1

0123456

Per Junction

Instantaneous On- state Voltage (V)

Fig. 2 - Forward Voltage Drop Characteristics

R

0

.

1

t

h

S

K

A

/

W

0

.

2

K

/

W

0

.

3

K

/

W

0

.

5

K

/

W

0

.

7

K

/

W

1

K

/

W

2

K

/

W

=

0

.

0

5

K

/

W

-

D

e

l

t

a

R

0

0102030405060

RMS Output Current (A)

0 25 50 75 100 125

Maximum Allowable Ambient Tem perature (°C)

Fig. 3 - Total Power Loss Characteristics

350

325

300

275

At Any Rated Load Condition And With
Rated V Applied Following Surge.

RRM

Initial T = 125°C

J

@ 60 H z 0.0083 s
@ 50 H z 0.0100 s

400

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

350

300

Of Conduction May Not Be Maintained.

Rated V Reapplied

Init ial T = 125°C

No Voltage Reapplied

RRM

250

225

200

175

54MT..KB Series

Peak H alf Sine Wave On-state Curre nt (A)

Per Junction

150

1 10 100

Number Of Equal Amplit ude Half Cycle Current Pulses (N)

250

200

54MT..KB Series

Peak H a lf Sin e Wave On-st a te Cu rrent (A)

Per Junction

150

0.01 0.1 1
Pul se Train Duration (s)

Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current

6

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J

54-94-104MT ..KB Series

Bulletin I27504 08/97

130

94MT..KB Series

120

Device Fully Turned-on

110
100

90

Per Single AC Switch

80
70

60

For all Conduction Angles

Maximum Allowabl e Case Temperature (°C)

50

0 20406080100120

RMS Output Current (A)

Fig. 6 - Current Ratings Characteristic

450

94MT..KB Series

400

T = 125°C

J

350
300
250

Device Fully
Turned-on

180°
120°

90°
60°
30°

200
150

(Per Total Module)

Conduction Angle

100

Maximum Total Power Loss (W)

50

0

0102030405060708090100

RMS Output Current (A)

Fig. 8 - Total Power Loss Characteristics

1000

100

T = 25°C

J

10

Instantaneous On-state Current (A)

1

012345

T = 125°C

J

94MT..KB Series
Per Junction

Instantane ous On -state Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

R

0

t

.

h

0

S

5

0

.

1

5

K

/

W

0

.

3

K

/

W

0

.

5

K

/

W

0

.

7

K

/

W

1

K

W

/

1

.

5

K

/

W

A

K

=

/

W

0

.

0

3

K

/

W

-

D

e

l

t

a

R

0 255075100125

Maximum Allowable Ambient Temperature (°C)

750

700

650

600

At Any Rated Load Condition And With
Rated V Applied Following Surge.

RRM

Initial T = 12 5°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

1000

900

800

700

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

In itial T = 125 °C

No Voltage Reapplied

Rated V Reapplied

550

500

450
400

94MT..KB Series

Peak H alf Sine Wave On-s ta te Current (A)

Per Junction

350

110100

Num b er Of Equal A m p litud e H al f Cy cle C u rre nt P ulses (N )

600

500

400

94MT..KB Series

Pea k Ha lf Sine Wav e On -state Cur rent (A)

Per Junction

300

0.01 0.1 1
Pulse Trai n Duration (s)

Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current

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J

RRM

7

54-94-104MT ..KB Series

Bulletin I27504 08/97

130

104MT..KB Series

120

Device Fully Turned- on

110

100

Per Single AC Switch

90

80

70

For all Conduction Angles

Maximum Allow able Case Temperature (°C)

60

0 20406080100120

RMS O utput Current (A)

Fig. 11 - Current Ratings Characteristic

500

104MT..KB Series

450

T = 125°C

J

De vice Fully

400

Turned-on

350

180°

120°

90°
60°
30°

300
250
200

Conduction Angle

(Per Total Module)

150
100

Maximum Total Power Loss (W)

50

0

0 20406080100120

RMS Output Current (A)

Fig. 13 - Total Power Loss Characteristics

1000

100

T = 25°C

J

10

Instantaneous On-state Current ( A)

1

012345

T = 125°C

J

104MT..KB Series
Pe r Junction

Instantaneous On-state Voltage (V)

Fig. 12 - Forward Voltage Drop Characteristics

R

t

0

h

.

S

0

A

5

0.
1

5

K

/W

0

.

3

K

/

W

0

.

5

K

/

W

0

.

7

K

/

W

1

K/

W

1

.

5

K

/

W

=

K

/

0

W

.

0

3

K

/

W

-

D

e

l

t

a

R

0 255075100125

Maximum Allo wable Am bient Temp era ture (°C)

1100

1000

900

800

At Any Rated Load Condition And With
Rated V Applied Following Surge.

RRM

Initial T = 1 2 5°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

1200

1100

1000

900

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

In itial T = 125 °C

No Voltage Reapplied

Rated V Reapplied

RRM

800

700

600

500

104MT..KB Series

Peak H a l f Sine Wave On-s ta te Curren t (A)

Per Junction

400

1 10 100

Num b er Of Equa l Amplitude Ha lf C ycle C urren t P ulses (N)

700

600

104M T..K B Se ries

500

Peak H a lf Sine Wav e On-state Cur rent (A)

Per Junction

400

0.01 0.1 1
Puls e Train Dur ation (s)

Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current

8

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J

10

1

th JC

0.1

Steady State Value
R = 1.05 K/W

thJC

R = 0.77 K/W

thJC

R = 0.69 K/W

thJC

(DC Operation)

94MT..KB Series

54-94-104MT ..KB Series

Bulletin I27504 08/97

54MT..KB Series

104MT..KB Series

0.01

Tran sien t The rm al Im pe danc e Z (K/W)

0.001

0.001 0. 01 0.1 1 10

Pe r Junction

Square Wa ve Pulse D ura tion (s)

100

Rectangular gate pulse

a) Recommended load line for

rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp > = 6 µ s

b) Recommended load line for

<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µ s, tp >= 6 µs

10

Fig. 16 - Thermal Impedance Z

(a)

(b)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

Characteristics

thJC

(1) PG M = 100 W , tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms

1

(4)

Inst antaneous Gate Voltage (V)

VGD

IGD

0.1

0.001 0.01 0.1 1 10 100 1000

54/ 94/ 104MT..KB Series

Frequency Limited by PG(AV)

(2) (1)

(3)

Ins ta n tan e ous Gate C u rre n t (A )

Fig. 17 - Gate Characteristics

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