• A-Port outputs have equivalent 22-Ω series resistors, so
no external resistors are required
• Support mixed-mode signal operation (5V input and output
voltages with 3.3V V
• Support unregulated battery operation down to 2.7V
•Typical V
T
= 25°C
A
•I
and power-up 3-state support hot insertion
OFF
• Bus hold on data inputs eliminates the need for external
pullup/pulldown resistors
• Distributed V
speed switching noise
• Flow-through architecture optimizes PCB layout
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Package: 48 pin R
(output ground bounce) < 0.8V at VCC = 3.3V,
OLP
CC
)
CC
and GND pin configuration minimizes high-
AD-PAK® flat pack
Logic Diagram
DESCRIPTION:
Maxwell Technologies’ 54LVTH162245 devices are 16-bit
(dual-octal) non-inverting 3-state transceivers designed for
low-voltage (3.3V) V
provide a TTL interface to a 5V system environment. These
devices can be used as two 8-bit transceivers or one 16-bit
transceiver. The devices allow data transmission from the A
bus to the B bus or form the B bus to the A bus, depending on
the logic level at the direction-control (DIR) input. The output
enable (OE
the buses are effectively isolated. The A-port outputs, which
are designed to source or sink up to 12 mA, include equivalent
22-
Ω series resistors to reduce overshoot and undershoot.
Maxwell Technologies' patented R
ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
Voltage range applied to any output in the high-impedance or
power-off state
Voltage range applied to any output in the high state
2
2
Current into any output in the low state
B Port
A Port
Current into any output in the high state
3
B Port
A Port
Input clamp currentI
Output clamp currentI
Thermal resistance
(VI < 0)-50--mA
IK
(VO < 0)-50--mA
OK
Θ
Operating temperature rangeT
Storage temperature rangeT
CC
V
I
V
O
V
O
I
O
I
O
JC
A
S
-0.54.6V
-0.57V
-0.57V
-0.5 VCC + 0.5V
--
--
--
--
--5
-55125°C
-65150
1
mA
96
30
mA
48
30
°
°
Power DissipationPD--1W
Memory
C
C
1. Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
2. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
3. This current flows only when the output is in the high state and V
1000611
12.19.01 Rev 1
> VCC.
O
All data sheets are subject to change without notice
These data sheets are created using the chip manufacturer’s published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
54LVTH162245
Memory
1000611
12.19.01 Rev 1
All data sheets are subject to change without notice