Datasheet 54F544SDMQB, 54F544LMQB Datasheet (NSC)

Page 1
54F/74F544 Octal Registered Transceiver
54F/74F544 Octal Registered Transceiver
December 1994
General Description
The ’F544 octal transceiver contains two sets of D-type latches for temporary storage of data flowing in either direc­tion. Separate Latch Enable and Output Enable inputs are provided for each register to permit independent control of inputting and outputting in either direction of data flow. The A outputs are guaranteed to sink 24 mA (20 mA Mil) while the B outputs are rated for 64 mA (48 mA Mil). The ’F544
Features
Y
8-bit octal transceiver
Y
Back-to-back registers for storage
Y
Separate controls for data flow in each direction
Y
A outputs sink 24 mA (20 mA Mil), B outputs sink 64 mA (48 mA Mil)
Y
300 mil slim PDIP
inverts data in both directions.
Commercial Military
Package
Number
Package Description
74F544SPC N24C 24-Lead (0.300×Wide) Molded Dual-In-Line
54F544DM (Note 2) J24A 24-Lead Ceramic Dual-In-Line
54F544SDM (Note 2) J24F 24-Lead (0.300×Wide) Ceramic Dual-In-Line
74F544SC (Note 1) M24B 24-Lead (0.300×Wide) Molded Small Outline, JEDEC
74F544MSA (Note 1) MSA24 24-Lead Molded Shrink Small Outline, EIAJ, Type II
54F544FM (Note 2) W24C 24-Lead Cerpack
54F544LM (Note 2) E28A 24-Lead Ceramic Leadless Chip Carrier, Type C
Note 1: Devices also available in 13×reel. Use suffixeSCX and MSAX.
Note 2: Military grade device with environmental and burn-in processing. Use suffix
e
DMQB, FMQB and LMQB
Logic Symbols
IEEE/IEC
TL/F/9555– 2
TL/F/9555– 1
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.
TL/F/9555
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Connection Diagrams
Pin Assignment for
DIP, SOIC and Flatpak
TL/F/9555– 3
Unit Loading/Fan Out
54F/74F
Pin Names Description
OEAB A-to-B Output Enable Input (Active LOW) 1.0/1.0 20 mA/b0.6 mA OEBA CEAB
B-to-A Output Enable Input (Active LOW) 1.0/1.0 20 mA/b0.6 mA
A-to-B Enable Input (Active LOW) 1.0/2.0 20 mA/b1.2 mA CEBA B-to-A Enable Input (Active LOW) 1.0/2.0 20 m A/b1.2 mA LEAB
A-to-B Latch Enable Input (Active LOW) 1.0/1.0 20 m A/b0.6 mA LEBA B-to-A Latch Enable Input (Active LOW) 1.0/1.0 20 mA/b0.6 mA A
B
0–A7
0–B7
A-to-B Data Inputs or 3.5/1.083 70 mA/b650 mA
B-to-A TRI-STATE Outputs 150/40(33.3)
B-to-A Data Inputs or 3.5/1.083 70 mA/b650 mA
A-to-B TRI-STATE Outputs 600/106.6(80)
U.L. Input I
HIGH/LOW Output IOH/I
b
3 mA/24 mA (20 mA)
b
12 mA/64 mA (48 mA)
IH/IIL
Pin Assignment
for LCC
TL/F/9555– 4
OL
Functional Description
The ’F544 contains two sets of eight D-type latches, with separate input and output controls for each set. For data flow from A to B, for example, the A-to-B Enable (CEAB input must be LOW in order to enter data from A take data from B Table. With CEAB Enable (LEAB
, as indicated in the Data I/O Control
0–B7
LOW, a LOW signal on the A-to-B Latch
) input makes the A-to-B latches transparent; a subsequent LOW-to-HIGH transition of the LEAB puts the A latches in the storage mode and their outputs no longer change with the A inputs. With CEAB LOW, the TRI-STATE
B output buffers are active and re-
É
flect the data present at the output of the A latches. Control of data flow from B to A is similar, but using the CEBA LEBA
and OEBA inputs.
0–A7
signal
and OEAB both
Data I/O Control Table
)
or
Inputs
CEAB LEAB OEAB
Latch Status Output Buffers
H X X Latched High Z
X H X Latched Ð L L X Transparent Ð X X H Ð High Z L X L Ð Driving
HeHIGH Voltage Level
e
L
,
LOW Voltage Level
e
X
Immaterial
A-to-B data flow shown; B-to-A flow control is the same, except using CEBA
, LEBA and OEBA
2
Page 3
Logic Diagram
Please note that this diagram is provided only for the understanding of logic operations and should not be used to estimate propagation delays.
TL/F/9555– 5
3
Page 4
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Storage Temperature
Ambient Temperature under Bias
Junction Temperature under Bias
Plastic
Pin Potential to
V
CC
Ground Pin
Input Voltage (Note 2)
Input Current (Note 2)
Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
b
65§Ctoa150§C
b
55§Ctoa125§C
b
55§Ctoa175§C
b
55§Ctoa150§C
b
0.5V toa7.0V
b
0.5V toa7.0V
b
30 mA toa5.0 mA
DC Electrical Characteristics
Symbol Parameter
V
V
V
V
V
I
IH
I
BVI
I
BVIT
I
CEX
V
I
OD
I
IL
I
IH
I
IL
IH
IL
CD
OH
OL
ID
a
a
Input HIGH Voltage 2.0 V Recognized as a HIGH Signal
Input LOW Voltage 0.8 V Recognized as a LOW Signal
Input Clamp Diode Voltage
Output HIGH 54F 10% V Voltage 54F 10% V
Output LOW 54F 10% V Voltage 54F 10% V
Input HIGH 54F 20.0 Current 74F 5.0
Input HIGH Current 54F 100 Breakdown Test 74F 7.0
Input HIGH Current 54F 1.0 Breakdown (I/O) 74F 0.5
Output HIGH 54F 250 Leakage Current 74F 250
Input Leakage Test All Other Pins Grounded
Output Leakage Circuit Current All Other Pins Grounded
Input LOW Current
I
Output Leakage Current 70 mA Max V
OZH
I
Output Leakage Current
OZL
54F 10% V 74F 10% V 74F 10% V 74F 10% V 74F 5% V 74F 5% V
74F 10% V 74F 10% V
74F 4.75 V 0.0
74F 3.75 mA 0.0
Min Typ Max
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
Voltage Applied to Output
in HIGH State (with V Standard Output
CC
e
TRI-STATE Output
Current Applied to Output
in LOW State (Max) twice the rated I
Recommended Operating Conditions
Free Air Ambient Temperature
Military Commercial 0
Supply Voltage
Military Commercial
54F/74F
2.5 I
2.4 I
2.0 I
2.5
2.4 I
2.0 I
2.7 I
2.7 I
b
Units V
b
1.2 V Min
CC
V Min
0.5 I
0.55
0.5 I
V Min
0.55 I
mA Max
mA Max
mA Max
mA Max
b
0.6
b
mA Max
1.2 V
650 mA Max V
0V)
Conditions
eb
18 mA,
I
IN
(except A
n,Bn
eb
1mA(An)
OH
eb
3mA(An,Bn)
OH
eb
12 mA (Bn)
OH
eb
I
1mA(An)
OH
eb
3mA(An,Bn)
OH
eb
15 mA (Bn)
OH
eb
1mA(An)
OH
eb
3mA(An,Bn)
OH
e
20 mA (An)
OL
e
I
48 mA (Bn)
OL
e
24 mA (An)
OL
e
64 mA (Bn)
OL
e
V
2.7V (except An,Bn)
IN
e
V
7.0V (except An,Bn)
IN
e
V
5.5V (An,Bn)
IN
e
V
VCC(An,Bn)
OUT
e
I
1.9 mA
ID
e
V
150 mV
IOD
e
V
0.5V (OEAB, OEBA)
IN
e
0.5V (CEAB, CEBA)
IN
e
2.7V (An,Bn)
OUT
e
0.5V (An,Bn)
OUT
b
0.5V to V
b
0.5V toa5.5V
OL
b
55§Ctoa125§C
Ctoa70§C
§
a
4.5V toa5.5V
a
4.5V toa5.5V
)
CC
(mA)
4
Page 5
DC Electrical Characteristics (Continued)
Symbol Parameter
I
OS
I
ZZ
I
CCH
I
CCL
I
CCZ
Output Short-Circuit Current
Bus Drainage Test 500 mA 0.0V V
Power Supply Current 70 105 mA Max V
Power Supply Current 85 130 mA Max V
Power Supply Current 83 125 mA Max V
Min Typ Max
b
60
b
100
AC Electrical Characteristics
74F 54F 74F
ea
T
A
Symbol Parameter V
Min Typ Max Min Max Min Max
t
PLH
t
PHL
t
PLH
t
PHL
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Propagation Delay 3.0 7.0 9.5 3.0 12.0 3.0 10.5 Transparent Mode 3.0 5.0 6.5 2.5 8.5 3.0 7.5 ns A
to Bnor Bnto A
n
n
Propagation Delay 6.0 10.0 13.0 6.0 18.0 6.0 14.5 LEBA to A
n
4.0 7.0 9.5 4.0 11.5 4.0 10.5
Propagation Delay 6.0 10.0 13.0 6.0 18.0 6.0 14.5 LEAB to B
n
4.0 7.0 9.5 4.0 11.5 4.0 10.5
Output Enable Time 3.0 7.0 9.0 3.0 11.0 3.0 10.0 OEBA or OEAB to Anor B CEBA
or CEAB to Anor B
4.0 7.5 10.5 4.0 13.0 4.0 12.0
n
n
Output Disable Time 1.0 6.0 8.0 2.0 10.0 1.0 9.0 OEBA or OEAB to Anor B CEBA
or CEAB to Anor B
2.5 5.5 10.5 2.0 9.5 2.5 11.5
n
n
CC
C
L
ea
e
54F/74F
25§C
5.0V
50 pF
Units V
b
150
b
225 V
mA Max
T
A,VCC
e
C
50 pF C
L
CC
e
Mil TA,V
V
OUT
OUT
OUT
O
O
O
CC
e
L
Conditions
e
0V (An)
e
0V (Bn)
e
5.25V (An,Bn)
e
HIGH
e
LOW
e
HIGH Z
e
Com
50 pF
Units
ns
ns
ns
AC Operating Requirements
74F 54F 74F
ea
25§C
T
Symbol Parameter
A
ea
CC
5.0V
V
Min Max Min Max Min Max
ts(H) Setup Time, HIGH or LOW 3.0 3.0 3.0 t
(L) Anor Bnto LEBA or LEAB 3.0 3.0 3.0
s
th(H) Hold Time, HIGH or LOW 3.0 3.0 3.0 t
(L) Anor Bnto LEBA or LEAB 3.0 3.0 3.0
h
tw(L) Latch Enable, B to A
Pulse Width, LOW
6.0 9.0 7.5 ns
5
T
A,VCC
e
Mil TA,V
e
Com Units
CC
ns
Page 6
Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows:
74F 544 S C X
Temperature Range Family Special Variations
e
74F
Commercial QBeMilitary grade device with
e
54F
Military environmental and burn-in
Device Type
Package Code
e
Slim Plastic DIP
SP
e
Ceramic DIP
D
e
Slim Ceramic DIP
SD
e
F
Flatpak
e
L
Leadless Chip Carrier (LCC)
e
S
Small Outline (SOIC)
e
MSA
Shrink Small Outline (SOIC) EIAJ, Type II
processing
e
Devices shipped in 13×reel
X
Temperature Range
e
Commercial (0§Ctoa70§C)
C
e
Military (b55§Ctoa125§C)
M
6
Page 7
Physical Dimensions inches (millimeters)
28-Lead Ceramic Leadless Chip Carrier (L)
NS Package Number E28A
24-Lead Ceramic Dual-In-Line Package (D)
NS Package Number J24A
7
Page 8
Physical Dimensions inches (millimeters) (Continued)
24-Lead (0.300×Wide) Ceramic Dual-In-Line Package (SD)
24-Lead (0.300×Wide) Molded Small Outline Package, JEDEC (S)
NS Package Number J24F
NS Package Number M24B
8
Page 9
Physical Dimensions inches (millimeters) (Continued)
24-Lead Molded Shrink Small Outline, EIAJ, Type II (MSA)
24-Lead (0.300×Wide) Molded Dual-In-Line Package (SP)
NS Package Number MSA24
NS Package Number N24C
9
Page 10
Physical Dimensions inches (millimeters) (Continued)
24-Lead Ceramic Flatpak (F)
NS Package Number W24C
54F/74F544 Octal Registered Transceiver
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