Datasheet 5962-9758401QDA, 5962-9758401QCA, 5962-9758401Q2A, 54F20DM, 54F20DC Datasheet (NSC)

TL/F/9462

54F/74F20 Dual 4-Input NAND Gate

November 1994

54F/74F20
Dual 4-Input NAND Gate

General Description

This device contains two independent gates, each of which
performs the logic NAND function.

Commercial Military

Package

Package Description

Number

74F20PC N14A 14-Lead (0.300×Wide) Molded Dual-In-Line

54F20DM (Note 2) J14A 14-Lead Ceramic Dual-In-Line

74F20SC (Note 1) M14A 14-Lead (0.150×Wide) Molded Small Outline, JEDEC

74F20SJ (Note 1) M14D 14-Lead (0.300×Wide) Molded Small Outline, EIAJ

54F20FM (Note 2) W14B 14-Lead Cerpack

54F20LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C

Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.

Note 2: Military grade device with environmental and burn-in processing. Use suffix

e

DMQB, FMQB and LMQB.

Logic Symbol

IEEE/IEC

TL/F/9462– 3

Connection Diagrams

Pin Assignment

for DIP, SOIC and Flatpak

TL/F/9462– 2

Pin Assignment

for LCC

TL/F/9462– 1

Unit Loading/Fan Out

54F/74F

Pin Names Description

U.L. Input I

IH/IIL

HIGH/LOW Output IOH/I

OL

An,Bn,Cn,D

n

Inputs 1.0/1.0 20 mA/b0.6 mA

O

n

Outputs 50/33.3

b

1 mA/20 mA

TRI-STATEÉis a registered trademark of National Semiconductor Corporation.

C

1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Storage Temperature

b

65§Ctoa150§C

Ambient Temperature under Bias

b

55§Ctoa125§C

Junction Temperature under Bias

b

55§Ctoa175§C

Plastic

b

55§Ctoa150§C

V

CC

Pin Potential to

Ground Pin

b

0.5V toa7.0V

Input Voltage (Note 2)

b

0.5V toa7.0V

Input Current (Note 2)

b

30 mA toa5.0 mA

Voltage Applied to Output

in HIGH State (with V

CC

e

0V)

Standard Output

b

0.5V to V

CC

TRI-STATEÉOutput

b

0.5V toa5.5V

Current Applied to Output

in LOW State (Max) twice the rated I

OL

(mA)

Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.

Note 2: Either voltage limit or current limit is sufficient to protect inputs.

Recommended Operating
Conditions

Free Air Ambient Temperature

Military

b

55§Ctoa125§C

Commercial 0

§

Ctoa70§C

Supply Voltage

Military

a

4.5V toa5.5V

Commercial

a

4.5V toa5.5V

DC Electrical Characteristics

Symbol Parameter

54F/74F

Units V

CC

Conditions

Min Typ Max

V

IH

Input HIGH Voltage 2.0 V Recognized as a HIGH Signal

V

IL

Input LOW Voltage 0.8 V Recognized as a LOW Signal

V

CD

Input Clamp Diode Voltage

b

1.2 V Min I

IN

eb

18 mA

V

OH

Output HIGH 54F 10% V

CC

2.5 I

OH

eb

1mA

Voltage 74F 10% V

CC

2.5 V Min I

OH

eb

1mA

74F 5% V

CC

2.7 I

OH

eb

1mA

V

OL

Output LOW 54F 10% V

CC

0.5
V Min

I

OL

e

20 mA

Voltage 74F 10% V

CC

0.5 I

OL

e

20 mA

I

IH

Input HIGH 54F 20.0

mA Max V

IN

e

2.7V

Current 74F 5.0

I

BVI

Input HIGH Current 54F 100

mA Max V

IN

e

7.0V

Breakdown Test 74F 7.0

I

CEX

Output HIGH 54F 250

mA Max V

OUT

e

V

CC

Leakage Current 74F 50

V

ID

Input Leakage

74F 4.75 V 0.0

I

ID

e

1.9 mA

Test All other pins grounded

I

OD

Output Leakage

74F 3.75 mA 0.0

V

IOD

e

150 mV

Circuit Current All other pins grounded

I

IL

Input LOW Current

b

0.6 mA Max V

IN

e

0.5V

I

OS

Output Short-Circuit Current

b

60

b

150 mA Max V

OUT

e

0V

I

CCH

Power Supply Current 0.9 1.4 mA Max V

O

e

HIGH

I

CCL

Power Supply Current 3.4 5.1 mA Max V

O

e

LOW

2

AC Electrical Characteristics

74F 54F 74F

T

A

ea

25§C

T

A,VCC

e

Mil TA,V

CC

e

Com

Symbol Parameter V

CC

ea

5.0V
C

L

e

50 pF C

L

e

50 pF

Units

C

L

e

50 pF

Min Typ Max Min Max Min Max

t

PLH

Propagation Delay 2.4 3.7 5.0 2.0 7.0 2.4 6.0

ns

t

PHL

An,Bn,Cn,Dnto O

n

1.5 3.2 4.3 1.5 6.5 1.5 5.3

Ordering Information

The device number is used to form part of a simplified purchasing code where the package type and temperature range are
defined as follows:

74F 20 S C X

Temperature Range Family Special Variations

74F

e

Commercial QBeMilitary grade device with

54F

e

Military environmental and burn-in

processing

Device Type

X

e

Devices shipped in 13×reels

Package Code

Temperature Range

P

e

Plastic DIP

C

e

Commercial (0§Ctoa70§C)

D

e

Ceramic DIP

M

e

Military (b55§Ctoa125§C)

F

e

Flatpak

L

e

Leadless Chip Carrier (LCC)

S

e

Small Outline SOIC JEDEC

SJ

e

Small Outline SOIC EIAJ

Physical Dimensions inches (millimeters)

20-Lead Ceramic Leadless Chip Carrier (L)

NS Package Number E20A

3

Physical Dimensions inches (millimeters) (Continued)

14-Lead Ceramic Dual-In-Line Package (D)

NS Package Number J14A

14-Lead (0.150×Wide) Molded Small Outline Package, JEDEC (S)

NS Package Number M14A

4

Physical Dimensions inches (millimeters) (Continued)

14-Lead (0.300×Wide) Molded Small Outline Package, EIAJ (SJ)

NS Package Number M14D

14-Lead (0.300×Wide) Molded Dual-In-Line Package (P)

NS Package Number N14A

5

54F/74F20 Dual 4-Input NAND Gate

Physical Dimensions inches (millimeters) (Continued)

14-Lead Ceramic Flatpak (F)

NS Package Number W14B

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failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.

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