Datasheet 54F20, 74F20 Datasheet (National Semiconductor)

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54F/74F20
Dual 4-Input NAND Gate

General Description

This device contains two independent gates, each of which
performs the logic NAND function.

54F/74F20 Dual 4-Input NAND Gate

November 1994

Commercial Military

74F20PC N14A 14-Lead (0.300×Wide) Molded Dual-In-Line

54F20DM (Note 2) J14A 14-Lead Ceramic Dual-In-Line

74F20SC (Note 1) M14A 14-Lead (0.150×Wide) Molded Small Outline, JEDEC

74F20SJ (Note 1) M14D 14-Lead (0.300×Wide) Molded Small Outline, EIAJ

54F20FM (Note 2) W14B 14-Lead Cerpack

54F20LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C

Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.

Note 2: Military grade device with environmental and burn-in processing. Use suffix

Logic Symbol

IEEE/IEC

TL/F/9462– 3

Package

Number

e

Connection Diagrams

Pin Assignment

for DIP, SOIC and Flatpak

TL/F/9462– 2

Package Description

DMQB, FMQB and LMQB.

Pin Assignment

for LCC

TL/F/9462– 1

Unit Loading/Fan Out

54F/74F

Pin Names Description

An,Bn,Cn,D
O

n

TRI-STATEÉis a registered trademark of National Semiconductor Corporation.

C

1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.

Inputs 1.0/1.0 20 mA/b0.6 mA

n

Outputs 50/33.3

TL/F/9462

U.L. Input I

HIGH/LOW Output IOH/I

b

1 mA/20 mA

IH/IIL

OL

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Storage Temperature

Ambient Temperature under Bias

Junction Temperature under Bias

Plastic

Pin Potential to

V

CC

Ground Pin

Input Voltage (Note 2)

Input Current (Note 2)

Voltage Applied to Output

in HIGH State (with V
Standard Output

CC

e

TRI-STATEÉOutput

0V)

b

65§Ctoa150§C

b

55§Ctoa125§C

b

55§Ctoa175§C

b

55§Ctoa150§C

b

0.5V toa7.0V

b

0.5V toa7.0V

b

30 mA toa5.0 mA

b

0.5V to V

b

0.5V toa5.5V

Current Applied to Output

in LOW State (Max) twice the rated I

Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.

Note 2: Either voltage limit or current limit is sufficient to protect inputs.

(mA)

OL

DC Electrical Characteristics

Symbol Parameter

V

V

V

V

V

I

IH

I

BVI

I

CEX

V

I

OD

I

IL

I

OS

I

CCH

I

CCL

IH

IL

CD

OH

OL

ID

Input HIGH Voltage 2.0 V Recognized as a HIGH Signal

Input LOW Voltage 0.8 V Recognized as a LOW Signal

Input Clamp Diode Voltage

Output HIGH 54F 10% V
Voltage 74F 10% V

Output LOW 54F 10% V
Voltage 74F 10% V

Input HIGH 54F 20.0
Current 74F 5.0

Input HIGH Current 54F 100
Breakdown Test 74F 7.0

Output HIGH 54F 250
Leakage Current 74F 50

Input Leakage
Test All other pins grounded

Output Leakage
Circuit Current All other pins grounded

Input LOW Current

Output Short-Circuit Current

Power Supply Current 0.9 1.4 mA Max V

Power Supply Current 3.4 5.1 mA Max V

74F 5% V

74F 4.75 V 0.0

74F 3.75 mA 0.0

Min Typ Max

2.5 I

CC

2.5 V Min I

CC

2.7 I

CC

CC

CC

b

60

CC

54F/74F

Recommended Operating
Conditions

Free Air Ambient Temperature

Military
Commercial 0

Supply Voltage

Military
Commercial

Units V

b

1.2 V Min I

0.5

0.5 I

CC

V Min

mA Max V

mA Max V

mA Max V

b

0.6 mA Max V

b

150 mA Max V

I

I

V

IN

OH

OH

OH

OL

OL

ID

IN

IN

OUT

IOD

IN

OUT

O

O

eb

eb

eb

eb

e

e

e

e

e

e

1.9 mA

e

e

e

e

e

20 mA
20 mA

HIGH

LOW

Conditions

18 mA

1mA
1mA
1mA

2.7V

7.0V

V

150 mV

0.5V

0V

b

55§Ctoa125§C

Ctoa70§C

§

a

4.5V toa5.5V

a

4.5V toa5.5V

CC

2

AC Electrical Characteristics

74F 54F 74F

ea

T

25§C

Symbol Parameter V

CC

C

A

L

ea

e

50 pF

5.0V

e

T

A,VCC

e

C

50 pF C

L

Mil TA,V

e

Com

CC

e

50 pF

L

Units

Min Typ Max Min Max Min Max

t

PLH

t

PHL

Propagation Delay 2.4 3.7 5.0 2.0 7.0 2.4 6.0
An,Bn,Cn,Dnto O

1.5 3.2 4.3 1.5 6.5 1.5 5.3

n

Ordering Information

The device number is used to form part of a simplified purchasing code where the package type and temperature range are
defined as follows:

74F 20 S C X

Temperature Range Family Special Variations

e

74F

Commercial QBeMilitary grade device with

e

54F

Military environmental and burn-in

Device Type

Package Code

e

Plastic DIP

P

e

Ceramic DIP

D

e

Flatpak

F

e

L

Leadless Chip Carrier (LCC)

e

S

Small Outline SOIC JEDEC

e

SJ

Small Outline SOIC EIAJ

processing

e

Devices shipped in 13×reels

X

Temperature Range

e

Commercial (0§Ctoa70§C)

C

e

Military (b55§Ctoa125§C)

M

Physical Dimensions inches (millimeters)

ns

20-Lead Ceramic Leadless Chip Carrier (L)

NS Package Number E20A

3

Physical Dimensions inches (millimeters) (Continued)

14-Lead Ceramic Dual-In-Line Package (D)

NS Package Number J14A

14-Lead (0.150×Wide) Molded Small Outline Package, JEDEC (S)

NS Package Number M14A

4

Physical Dimensions inches (millimeters) (Continued)

14-Lead (0.300×Wide) Molded Small Outline Package, EIAJ (SJ)

14-Lead (0.300×Wide) Molded Dual-In-Line Package (P)

NS Package Number M14D

NS Package Number N14A

5

Physical Dimensions inches (millimeters) (Continued)

54F/74F20 Dual 4-Input NAND Gate

14-Lead Ceramic Flatpak (F)

NS Package Number W14B

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failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.

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