Datasheet 54F189DLQB, 54F189DC Datasheet (NSC)

Page 1
TL/F/9493
54F/74F189 64-Bit Random Access Memory with TRI-STATE Outputs
August 1995
54F/74F189 64-Bit Random Access Memory with TRI-STATE
É
Outputs
General Description
) input is HIGH. The outputs are active only in the Read mode and the output data is the complement of the stored data.
Features
Y
TRI-STATE outputs for data bus applications
Y
Buffered inputs minimize loading
Y
Address decoding on-chip
Y
Diode clamped inputs minimize ringing
Y
Available in SOIC, (300 mil only)
Commercial Military
Package
Package Description
Number
74F189PC N16E 16-Lead (0.300×Wide) Molded Dual-In-Line
54F189DL (Note 2) J16A 16-Lead Ceramic Dual-In-Line
74F189SC (Note 1) M16A 16-Lead (0.150×Wide) Molded Small Outline, JEDEC
74F189SJ (Note 1) M16D 16-Lead (0.300×Wide) Molded Small Outline, EIAJ
54F189FL (Note 2) W16A 16-Lead Cerpack
54F189LL (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C
Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.
Note 2: Military grade device with environmental and burn-in processing. Use suffix
e
DLQB, FLQB and LLQB.
Logic Symbols Connection Diagrams
TL/F/9493– 1
IEEE/IEC
TL/F/9493– 4
Pin Assignment
for DIP, SOIC and Flatpak
TL/F/9493– 2
Pin Assignment
for LCC
TL/F/9493– 3
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Page 2
Unit Loading/Fan Out
54F/74F
Pin Names Description
U.L. Input I
IH/IIL
HIGH/LOW Output IOH/I
OL
A0–A
3
Address Inputs 1.0/1.0 20 mA/b0.6 mA
CS
Chip Select Input (Active LOW) 1.0/1.0 20 mA/b1.2 mA
WE
Write Enable Input (Active LOW) 1.0/1.0 20 mA/b0.6 mA
D0–D
3
Data Inputs 1.0/1.0 20 mA/b0.6 mA
O
0–O3
Inverted Data Outputs 150/40 (33.3)b3.0 mA/24 mA (20 mA)
Function Table
Inputs
Operation Condition of Outputs
CS WE
L L Write High Impedance L H Read Complement of Stored Data
H X Inhibit High Impedance
HeHIGH Voltage Level L
e
LOW Voltage Level
X
e
Immaterial
Block Diagram
TL/F/9493– 5
2
Page 3
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Storage Temperature
b
65§Ctoa150§C
Ambient Temperature under Bias
b
55§Ctoa125§C
Junction Temperature under Bias
b
55§Ctoa175§C
Plastic
b
55§Ctoa150§C
V
CC
Pin Potential to
Ground Pin
b
0.5V toa7.0V
Input Voltage (Note 2)
b
0.5V toa7.0V
Input Current (Note 2)
b
30 mA toa5.0 mA
Voltage Applied to Output
in HIGH State (with V
CC
e
0V)
Standard Output
b
0.5V to V
CC
TRI-STATE Output
b
0.5V toa5.5V
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating Conditions
Free Air Ambient Temperature
Military
b
55§Ctoa125§C
Commercial 0
§
Ctoa70§C
Supply Voltage
Military
a
4.5V toa5.5V
Commercial
a
4.5V toa5.5V
DC Electrical Characteristics
Symbol Parameter
54F/74F
Units V
CC
Conditions
Min Typ Max
V
IH
Input HIGH Voltage 2.0 V Recognized as a HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized as a LOW Signal
V
CD
Input Clamp Diode Voltage
b
1.2 V Min I
IN
eb
18 mA
V
OH
Output HIGH 54F 10% V
CC
2.5 I
OH
eb
1mA
Voltage 54F 10% V
CC
2.4 I
OH
eb
3mA
74F 10% V
CC
2.5 V Min
I
OH
eb
1mA
74F 10% V
CC
2.4 I
OH
eb
3mA
74F 5% V
CC
2.7 I
OH
eb
1mA
74F 5% V
CC
2.7 I
OH
eb
3mA
V
OL
Output LOW 54F 10% V
CC
0.5 V Min
I
OL
e
20 mA
Voltage 74F 10% V
CC
0.5 I
OL
e
24 mA
I
IH
Input HIGH 54F 20.0
mA Max
V
IN
e
2.7V
Current 74F 5.0
I
BVI
Input HIGH Current 54F 100
mA Max
V
IN
e
7.0V
Breakdown Test 74F 7.0
I
CEX
Output HIGH 54F 250
mA Max
V
OUT
e
V
CC
Leakage Current 74F 50
V
ID
Input Leakage
74F 4.75 V 0.0
I
ID
e
1.9 mA
Test All Other Pins Grounded
I
OD
Output Leakage
74F 3.75 mA 0.0
V
IOD
e
150 mV
Circuit Current All Other Pins Grounded
I
IL
Input LOW Current
b
0.6 mA Max
V
IN
e
0.5V (except CS)
b
1.2 V
IN
e
0.5V (CS)
I
OZH
Output Leakage Current 50 m A Max V
OUT
e
2.7V
I
OZL
Output Leakage Current
b
50 mA Max V
OUT
e
0.5V
I
OS
Output Short-Circuit Current
b
60
b
150 mA Max V
OUT
e
0V
I
ZZ
Bus Drainage Test 500 mA 0.0V V
OUT
e
5.25V
I
CCZ
Power Supply Current 37 55 mA Max V
O
e
HIGH Z
3
Page 4
AC Electrical Characteristics
74F 54F 74F
T
A
ea
25§C
*T
A,VCC
e
Mil TA,V
CC
e
Com
Symbol Parameter V
CC
ea
5.0V C
L
e
50 pF C
L
e
50 pF
Units
C
L
e
50 pF
Min Typ Max Min Max Min Max
t
PLH
Access Time, HIGH or LOW 10.0 18.5 26.0 9.0 32.0 10.0 27.0
ns
t
PHL
Anto O
n
8.0 13.5 19.0 8.0 23.0 8.0 20.0
t
PZH
Access Time, HIGH or LOW 3.5 6.0 8.5 3.5 10.5 3.5 9.5
ns
t
PZL
CS to O
n
5.0 9.0 13.0 5.0 15.0 5.0 14.0
t
PHZ
Disable Time, HIGH or LOW 2.0 4.0 6.0 2.0 8.0 2.0 7.0
ns
t
PLZ
CS to O
n
3.0 5.5 8.0 2.5 10.0 3.0 9.0
t
PZH
Write Recovery Time, 6.5 15.0 28.0 6.5 37.5 6.5 29.0
ns
t
PZL
HIGH or LOW WE to O
n
6.5 11.0 15.5 6.5 17.5 6.5 16.5
t
PHZ
Disable Time, HIGH or LOW 4.0 7.0 10.0 3.5 12.0 4.0 11.0
ns
t
PLZ
WE to O
n
5.0 9.0 13.0 5.0 15.0 5.0 14.0
AC Operating Requirements
74F 54F 74F
Symbol Parameter
T
A
ea
25§C
*T
A,VCC
e
Mil TA,V
CC
e
Com Units
V
CC
ea
5.0V
Min Max Min Max Min Max
ts(H) Setup Time, HIGH or LOW 0 0 0 t
s
(L) Anto WE 000
t
h
(H) Hold Time, HIGH or LOW 2.0 2.0 2.0
ns
t
h
(L) Anto WE 2.0 2.0 2.0
ts(H) Setup Time, HIGH or LOW 10.0 11.0 10.0 t
s
(L) Dnto WE 10.0 11.0 10.0
th(H) Hold Time, HIGH or LOW 0 2.0 0
ns
t
h
(L) Dnto WE 0 2.0 0
ts(L) Setup Time, LOW
000
CS
to WE
th(L) Hold Time, LOW
6.0 7.5 6.0
ns
CS
to WE
tw(L) WE Pulse Width, LOW 6.0 15.0 6.0 ns
*T
A
eb
55§Ctoa125§C
4
Page 5
Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows:
74F 189 S C X
Temperature Range Family Special Variations
74F
e
Commercial XeDevices shipped in 13×reels
54F
e
Military QBeMilitary grade with environmental
and burn-in processing shipped
Device Type
in tubes
Package Code
Temperature Range
P
e
Plastic DIP
C
e
Commercial (0§Ctoa70§C)
D
e
Ceramic DIP
L
e
Military (b40§Ctoa125§C)
F
e
Flatpak
L
e
Leadless Ceramic Chip Carrier (LCC)
S
e
Small Outline SOIC JEDEC
SJ
e
Small Outline SOIC EIAJ
Physical Dimensions inches (millimeters)
20-Lead Ceramic Leadless Chip Carrier (L)
NS Package Number E20A
5
Page 6
Physical Dimensions inches (millimeters) (Continued)
16-Lead Ceramic Dual-In-Line Package (D)
NS Package Number J16A
16-Lead (0.150×Wide) Molded Small Outline Package, JEDEC (S)
NS Package Number M16A
6
Page 7
Physical Dimensions inches (millimeters) (Continued)
16-Lead (0.300×Wide) Molded Dual-In-Line Package (P)
NS Package Number N16E
16-Lead (0.300×Wide) Molded Small Outline Package, EIAJ (SJ)
NS Package Number M16D
7
Page 8
54F/74F189 64-Bit Random Access Memory with TRI-STATE Outputs
Physical Dimensions inches (millimeters) (Continued)
16 Lead Ceramic Flatpak (F)
NS Package Number W16A
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