Datasheet 54F138, 74F138 Datasheet (Fairchild)

Page 1
查询54F138供应商
54F/74F138 1-of-8 Decoder/Demultiplexer
54F/74F138 1-of-8 Decoder/Demultiplexer
November 1994
General Description
The ’F138 is a high-speed 1-of-8 decoder/demultiplexer. This device is ideally suited for high-speed bipolar memory chip select address decoding. The multiple input enables allow parallel expansion to a 1-of-24 decoder using just three ’F138 devices or a 1-of-32 decoder using four ’F138 devices and one inverter.
Commercial Military
74F138PC N16E 16-Lead (0.300×Wide) Molded Dual-In-Line
54F138DM (Note 2) J16A 16-Lead Ceramic Dual-In-Line
74F138SC (Note 1) M16A 16-Lead (0.150×Wide) Molded Small Outline, JEDEC
74F138SJ (Note 1) M16D 16-Lead (0.300×Wide) Molded Small Outline, EIAJ
54F138FM (Note 2) W16A 16-Lead Cerpack
54F138LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C
Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.
Note 2: Military grade device with environmental and burn-in processing. Use suffix
Package
Number
Logic Symbols
Pin Assignment for DIP,
SOIC and Flatpak
Features
Y
Demultiplexing capability
Y
Multiple input enable for easy expansion
Y
Active LOW mutually exclusive outputs
Y
Guaranteed 4000V minimum ESD protection
Package Description
e
DMQB, FMQB and LMQB.
Connection Diagrams
Pin Assignment
for LCC
TL/F/9478– 3
IEEE/IEC
TL/F/9478– 6
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.
TL/F/9478
TL/F/9478– 1
TL/F/9478– 2
Page 2
Unit Loading/Fan Out
54F/74F
Pin Names Description
A0–A E
1,E2
E
3
O0–O
Address Inputs 1.0/1.0 20 mA/b0.6 mA
2
Enable Inputs (Active LOW) 1.0/1.0 20 mA/b0.6 mA Enable Input (Active HIGH) 1.0/1.0 20 mA/b0.6 mA Outputs (Active LOW) 50/33.3
7
U.L. Input I
HIGH/LOW Output IOH/I
IH/IIL
b
1 mA/20 mA
OL
Functional Description
The ’F138 high-speed 1-of-8 decoder/demultiplexer ac­cepts three binary weighted inputs (A enabled, provides eight mutually exclusive active LOW out­puts (O active LOW (E will be HIGH unless E This multiple enable function allows easy parallel expansion
). The ’F138 features three Enable inputs, two
0–O7
) and one active HIGH (E3). All outputs
1,E2
and E2are LOW and E3is HIGH.
1
0,A1,A2
) and, when
of the device to a 1-of-32 (5 lines to 32 lines) decoder with just four ’F138 devices and one inverter (See ’F138 can be used as an 8-output demultiplexer by using one of the active LOW Enable inputs as the data input and the other Enable inputs as strobes. The Enable inputs which are not used must be permanently tied to their appropriate active HIGH or active LOW state.
Truth Table
Inputs Outputs
E1E2E3A0A
HXXXXXHH H HHHHH XHXXXXHH H HHHHH XXLXXXHH H HHHHH
LLHLLL L H HHHHHH LLHHLLHL H HHHHH LLHLHLHH L HHHHH LLHHHLHH H LHHHH
LLHLLHHHH H LHHH LLHHLHHHHHHLHH LLHLHHHHH HHH LH LLHHHHHHH HHHHL
HeHIGH Voltage Level
e
L
LOW Voltage Level
e
X
Immaterial
A2O0O1O
1
O3O4O5O6O
2
Figure 1
). The
7
2
Page 3
Logic Diagram
Please note that this diagram is provided only for the understanding of logic operations and should not be used to estimate propagation delays.
TL/F/9478– 4
3
Page 4
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Storage Temperature
Ambient Temperature under Bias
Junction Temperature under Bias
Plastic
Pin Potential to
V
CC
Ground Pin
Input Voltage (Note 2)
Input Current (Note 2)
Voltage Applied to Output
in HIGH State (with V Standard Output
CC
e
TRI-STATEÉOutput
0V)
b
65§Ctoa150§C
b
55§Ctoa125§C
b
55§Ctoa175§C
b
55§Ctoa150§C
b
0.5V toa7.0V
b
0.5V toa7.0V
b
30 mA toa5.0 mA
b
0.5V to V
b
0.5V toa5.5V
Current Applied to Output
in LOW State (Max) twice the rated I
(mA)
OL
ESD Last Passing Voltage (Min) 4000V
Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Symbol Parameter
V
V
V
V
V
I
IH
I
BVI
I
CEX
V
I
OD
I
IL
I
OS
I
CCH
I
CCL
IH
IL
CD
OH
OL
ID
Input HIGH Voltage 2.0 V Recognized as a HIGH Signal
Input LOW Voltage 0.8 V Recognized as a LOW Signal
Input Clamp Diode Voltage
Output HIGH 54F 10% V Voltage 74F 10% V
Output LOW 54F 10% V Voltage 74F 10% V
Input HIGH 54F 20.0 Current 74F 5.0
Input HIGH Current 54F 100 Breakdown Test 74F 7.0
Output HIGH 54F 250 Leakage Current 74F 50
Input Leakage Test All Other Pins Grounded
Output Leakage Circuit Current All Other Pins Grounded
Input LOW Current
Output Short-Circuit Current
Power Supply Current 13 20 mA Max V
Power Supply Current 13 20 mA Max V
74F 5% V
74F 4.75 V 0.0
74F 3.75 mA 0.0
Min Typ Max
2.5 I
CC
2.5 V Min I
CC
2.7 I
CC
CC
CC
b
60
CC
54F/74F
Recommended Operating Conditions
Free Air Ambient Temperature
Military Commercial 0
Supply Voltage
Military Commercial
Units V
b
1.2 V Min I
0.5
0.5 I
CC
V Min
mA Max
mA Max
mA Max
b
0.6 mA Max V
b
150 mA Max V
I
V
V
V
I
V
IN
OH
OH
OH
OL
OL
ID
IN
IN
OUT
IOD
IN
OUT
O
O
eb
eb
eb
eb
e
e
e
e
e
e
1.9 mA
e
e
e
e
e
20 mA 20 mA
HIGH
LOW
Conditions
18 mA
1mA 1mA 1mA
2.7V
7.0V
V
150 mV
0.5V
0V
b
55§Ctoa125§C
Ctoa70§C
§
a
4.5V toa5.5V
a
4.5V toa5.5V
CC
4
Page 5
AC Electrical Characteristics
Symbol Parameter V
t t
t t
t t
PLH
PHL
PLH
PHL
PLH
PHL
Propagation Delay 3.5 5.6 7.5 3.0 12.0 3.5 8.5 Anto O
n
Propagation Delay 3.5 5.4 7.0 3.0 11.0 3.5 8.0 E1or E2to O
n
Propagation Delay 4.0 6.2 8.0 3.5 12.5 4.0 9.0 E3to O
n
T
CC
C
Min Typ Max Min Max Min Max
4.0 6.1 8.0 4.0 9.5 4.0 9.0
3.0 5.3 7.0 3.0 8.0 3.0 7.5
3.5 5.6 7.5 3.5 8.5 3.5 8.5
74F 54F 74F
ea
25§C
A
L
ea
e
50 pF
5.0V
T
A,VCC
e
C
50 pF C
L
e
Mil TA,V
e
Com Fig.
CC
e
50 pF
L
Units
ns
ns
ns
No.
F–3
F–4
F–4
FIGURE 1. Expansion to 1-of-32 Decoding
TL/F/9478– 5
Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows:
74F 138 S C X
Temperature Range Family Special Variations
e
74F
Commercial QBeMilitary grade device with
e
54F
Military environmental and burn-in
Device Type
Package Code
e
Plastic DIP
P
e
Ceramic DIP
D
e
Flatpak
F
e
L
Leadless Chip Carrier (LCC)
e
S
Small Outline SOIC JEDEC
e
SJ
Small Outline SOIC EIAJ
5
processing
e
Devices shipped in 13×reel
X
Temperature Range
e
Commercial (0§Ctoa70§C)
C
e
Military (b55§Ctoa125§C)
M
Page 6
6
Page 7
Physical Dimensions inches (millimeters)
20-Lead Ceramic Leadless Chip Carrier (L)
NS Package Number E20A
7
Page 8
Physical Dimensions inches (millimeters) (Continued)
16-Lead Ceramic Dual-In-Line Package (D)
NS Package Number J16A
16-Lead (0.150×Wide) Molded Small Outline Package, JEDEC (S)
NS Package Number M16A
8
Page 9
Physical Dimensions inches (millimeters) (Continued)
16-Lead (0.300×Wide) Molded Small Outline Package, EIAJ (SJ)
16-Lead (0.300×Wide) Molded Dual-In-Line Package (P)
NS Package Number M16D
NS Package Number N16E
9
Page 10
Physical Dimensions inches (millimeters) (Continued)
54F/74F138 1-of-8 Decoder/Demultiplexer
16-Lead Ceramic Flatpak (F)
NS Package Number W16A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semiconductores National Semiconductor Corporation GmbH Japan Ltd. Hong Kong Ltd. Do Brazil Ltda. (Australia) Pty, Ltd.
2900 Semiconductor Drive Livry-Gargan-Str. 10 Sumitomo Chemical 13th Floor, Straight Block, Rue Deputado Lacorda Franco Building 16 P.O. Box 58090 D-82256 F4urstenfeldbruck Engineering Center Ocean Centre, 5 Canton Rd. 120-3A Business Park Drive Santa Clara, CA 95052-8090 Germany Bldg. 7F Tsimshatsui, Kowloon Sao Paulo-SP Monash Business Park Tel: 1(800) 272-9959 Tel: (81-41) 35-0 1-7-1, Nakase, Mihama-Ku Hong Kong Brazil 05418-000 Nottinghill, Melbourne TWX: (910) 339-9240 Telex: 527649 Chiba-City, Tel: (852) 2737-1600 Tel: (55-11) 212-5066 Victoria 3168 Australia
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
Fax: (81-41) 35-1 Ciba Prefecture 261 Fax: (852) 2736-9960 Telex: 391-1131931 NSBR BR Tel: (3) 558-9999
Tel: (043) 299-2300 Fax: (55-11) 212-1181 Fax: (3) 558-9998 Fax: (043) 299-2500
Loading...