Datasheet 50mt060u Datasheet

50MT060ULSTAPbF

MTP

www.vishay.com

Vishay Semiconductors

"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A

FEATURES

• Generation 4 ultrafast speed IGBT technology

•HEXFRED® diode with ultrasoft reverse recovery

• Very low conduction and switching losses

• Optional SMD thermistor (NTC)

•Al

• Very low stray inductance design for high speed operation

• UL approved file E78996

• Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DBC

2O3

resonant mode

PRODUCT SUMMARY

V

CES

I

DC 100 A

C

V

CE(on)

600 V

1.68 V

BENEFITS

• Optimized for welding, UPS and SMPS applications

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

IGBT

Maximum power dissipation

Diode

CES

C

CM

LM

F

FM

GE

ISOL

P

D

TC = 25 °C 100

T

= 122 °C 50

C

TC = 100 °C 48

Any terminal to case, t = 1 minute 2500

TC = 25 °C 445

= 100 °C 175

T

C

= 25 °C 205

T

C

= 100 °C 83

T

C

600 V

200

± 20

A

V

W

Revision: 17-Jun-11

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Document Number: 94540

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

Collector to emitter voltage V

Gate threshold voltage V

Diode reverse breakdown voltage V

Temperature coefficient of threshold voltage V

GE(th)

Forward transconductance g

Collector to emitter leaking current I

Diode forward voltage drop V

Gate to emitter leakage current I

CE(on)

GE(th)

BR

fe

CES

FM

GES

VGE = 0 V, IC = 250 μA 600 - -

VGE = 15 V, IC = 50 A - 1.69 2.31

= 15 V, IC = 100 A - 1.96 2.55

V

GE

= 15 V, IC = 100 A, TJ = 150 °C - 1.88 2.24

V

GE

IC = 0.5 mA 3 - 6

IR = 200 μA 600 - -

/TJVCE = VGE, IC = 500 μA - - 13 - mV/°C

VCE = 50 V, IC = 100 A 22 29 - S

VGE = 0 V, V

= 0 V, V

V

GE

IF = 100 A, V

= 100 A, V

I

F

= 600 V - - 0.25

CE

= 600 V, TJ = 150 °C - - 6

CE

= 0 V - 1.64 1.82

GE

= 0 V, TJ = 150 °C - 1.56 1.74

GE

VGE = ± 20 V - - ± 250 nA

Vishay Semiconductors

V

mA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Diode junction capacitance C

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode peak rate of fall of recovery during t

dI

b

(rec)M

g

ge

gc

on

off

ts

on

off

ts

ies

oes

res

t

rr

IC = 100 A

= 480 V

V

CC

V

= 15 V

GE

VCC = 480 V, IC = 50 A, VGE = 15 V,

= 5 , TJ = 25 °C,

R

g

energy losses include tail and diode reverse recovery

VCC = 480 V, IC = 50 A, VGE = 15 V,

= 5 , TJ = 125 °C,

R

g

energy losses include tail and diode reverse recovery

VGE = 0 V V

= 30 V

CC

f = 1.0 MHz

VR = 600 V, f = 1.0 MHz - 118 177

VCC = 480 V, IC = 50 A dI/dt = 200 A/μs R

= 5 

g

/dt - 236 - A/μs

- 370 555

-6496

nCGate to emitter charge (turn-on) Q

- 163 245

-0.71.2

-1.72.6

-2.43.8 mJ

-1.11.7

-2.53.8

-3.65.5

- 9800 14 700

- 602 903

pF

- 121 182

- 99 150 ns

-6.59.8A

- 320 735 nC

Revision: 17-Jun-11

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50MT060ULSTAPbF

R

0

R

1

-------



1

T

0

------

1

T

1

------

–





exp=

0.1 1 10 100

f , Frequency ( kHz )

0

25

50

75

100

L

o

a

d

C

u

r

e

n

t

(

A

)

Duty cycle : 50% Tj = 125°C Tsink = 90°C Power Dissipation = 92W

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THERMISTOR SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Resistance R

Sensitivity index of the thermistor material

(1)

0

(1)(2)



T0 = 25 °C - 30 - k

T0 = 25 °C

= 85 °C

T

1

Notes

(1)

T0, T1 are thermistor´s temperatures

(2)

, temperature in Kelvin

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

IGBT

Case to sink per module R

Mounting torque to heatsink ± 10 %

Weight 66 g

J

Stg

R

thJC

thCS

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads.

Vishay Semiconductors

- 4000 - K

- 40 - 150

- 40 - 125

- - 0.28

3Nm

°C

°C/WDiode - - 0.6

Fig. 1 - Typical Load Current vs. Frequency (Load Current = I

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of Fundamental)

RMS

3

Document Number: 94540

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1

10

100

0.6 1.0 1.4 1.8 2.2

VCE , Collector-to-Emitter Voltage (V)

I

C

, Collector-to-Emitter Current (A)

TJ = 25°C

TJ = 150°C

Vge = 15V 380μs Pulse Width

20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

1

1.25

1.5

1.75

2

V

C

E

,

C

o

l

e

c

t

o

r

-

t

o

E

m

i

t

e

r

V

o

l

t

a

g

e

(

V

)

IC= 100A

IC= 50A

IC= 25A

1E- 006 1E-005 0.0001 0. 001 0.01 0. 1 1

t1, Rectangular Pulse Duration (sec)

1E- 005

0.0001

0. 001

0. 01

0.1

1

T

h

e

r

m

a

l

R

e

s

p

o

n

s

e

(

Z

t

h

J

C

)

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE ( THE RMAL RE S P ONS E )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.060 0.000968

0.130 0.019621

0.100 0.051755

?

J

τ

J

?

1

τ

1

?

2

τ

2

?

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

?

τ

C

Ci= τi/Ri

50MT060ULSTAPbF

Vishay Semiconductors

120

) A

( t

100

n e

r r

u C

80

r o

t c e

l

l o

60

C C

D

40

m u

m

i x a

20

M

C

I

0

25 50 75 100 125 150

TCCase Temperature (°C)

Fig. 2 - Typical Output Characteristics

1000.0

t (A) n e

r r

u C r e

t

i m E

o

t

r

o

t c e

l

l o

C ,

C

I

100.0

10.0

TJ= 150°C

TJ= 25°C

VCC= 50V

1.0

5.0 5.5 6.0 6.5

20µs PULSE WIDTH

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Maximum Collector Current vs. Case Temperature

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

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Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

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1E-006 1E-005 0.0001 0.001 0. 01 0. 1 1

t1, Rectangular Pulse Duration (sec)

0.0001

0. 001

0.01

0.1

1

T

h

e

r

m

a

l

R

e

s

p

o

n

s

e

(

Z

t

h

J

C

)

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE ( THERMAL RES PONSE )

Notes:

1. Duty Factor D = t1/t2

2. Pe ak Tj = P dm x Zt hj c + Tc

Ri (°C/W) τi (sec)

0.200 0.000993

0.296 0.038934

0.102 0.52648

?

J

τ

J

?

1

τ

1

?

2

τ

2

?

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

?

τ

C

Ci= τi/Ri

0 100 200 300 400

QG, Total Gate Charge (nC)

0.0

4.0

8.0

12.0

16.0

20.0

V

G

E

,

G

a

t

e

-

t

o

-

E

m

i

t

e

r

V

o

l

t

a

g

e

(

V

)

IC= 100A

V

CE

= 480V

0 10 20 30

Rg, Gate Resistance (Ω)

0.0

1.0

2.0

3.0

4.0

5.0

S

w

i

t

c

h

i

n

g

L

o

s

e

s

(

m

J

)

VCC= 480V

VGE = 15V

TJ= 25°C

I

C

= 100A

E

OFF

E

ON

Fig. 7 - Maximum Transient Thermal Impedance, Junction to Case (Diode)

50MT060ULSTAPbF

Vishay Semiconductors

14000

12000

) F p

( e

c n a

t

i c a p a

C ,

C

10000

8000

6000

4000

2000

Cies

Coes

Cres

0

1 10 100 1000

VGE = 0V, f = 1 MHZ

C

= Cge+Cgc, CceSHORTED

ies

C

= C

res

gc

C

= C

+ C

oes

ce

gc

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Typical Capacitance vs. Collector to Emitter Voltage

Fig. 9 - Typical Gate Charge vs. Gate to Emitter Voltage

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Fig. 10 - Typical Switching Losses vs. Gate Resistance

100

RG= 5.0Ω VGE= 15V

VCC= 480V

) J

m (

s

10

e s s o L

g n

i h c

t

i w

1

S l a

t o T

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

IC= 100A

IC= 50A

IC= 25A

TJ, Junction Temperature (°C)

Fig. 11 - Typical Switching Losses vs. Junction Temperature

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20 40 60 80 100

IC, Collector Current (A)

0

2

4

6

8

10

12

T

o

t

a

l

S

w

i

t

c

h

i

n

g

L

o

s

e

s

(

m

J

)

RG= 5.0 Ω TJ = 125 °C

VGE= 15 V

VCC= 480 V

1

10

100

I

n

s

t

a

n

t

a

n

e

o

u

s

F

o

r

w

a

r

d

C

u

r

e

n

t

-

I

F

(

A

)

TJ= 150°C

TJ= 125°C

TJ= 25°C

50MT060ULSTAPbF

Vishay Semiconductors

Fig. 12 - Typical Switching Losses vs. Collector to Emitter Current

1000

V

= 20V

GE

TJ = 125°C

) A

( t n e

r r

u

100

C r e

t

i m

E

o

t

r

o

t

10

c e

l

l o

C

, C

I

1

1 10 100 1000

VCE, Collector-to-Emitter Voltage (V)

SAFE OPERATING AREA

Fig. 13 - Turn-Off SOA

Fig. 14 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

320

280

240

200

) s n

(

r

t

160

120

80

40

100 200 300 400 500 600

VR = 480V

TJ = 125°C

TJ = 25°C

dif / dt - (A / µs)

IF= 100A

IF = 50A IF = 25A

Fig. 15 - Typical Reverse Recovery Time vs. dI

/dt

F

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3, 4

5, 6

9

10

7, 8

T

2

R

1

Thermistor

50MT060ULSTAPbF

Vishay Semiconductors

40

30

) A

(

-

20

M R R

I

10

0

IF= 100 A

IF= 50A

IF= 25A

VR = 480V

TJ = 125°C

TJ = 25°C

100 200 300 400 500 60 0

dif / dt - (A / µs)

Fig. 16 - Typical Recovery Current vs. dIF/dt

10000

) s µ

/ A

(

t

1000

d

/ M

) c e r

(

i d

IF= 100A

IF = 50A IF = 25A

VR = 480V

TJ = 125°C

TJ = 25°C

2000

IF= 100A

IF= 50A

1600

IF= 25A

1200

) C n

(

r

Q

800

400

0

100 200 300 400 500 600

dif / dt - (A / µs )

VR = 480V

TJ = 125°C

TJ = 25°C

Fig. 17 - Typical Stored Charge vs.dI

/dt

F

100

100 200 300 400 500 600

dif / dt - (A / µs)

Fig. 18 - Typical dI

/dt vs. dIF/dt

(rec)M

Revision: 17-Jun-11

Fig. 19 - Electrical diagram

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1 - Current rating (50 = 50 A)

2 - Essential part number

3 - Voltage rating (060 = 600 V)

4 - Speed/type (U = Ultrafast IGBT)

5 - Circuit configuration (LS = Low side chopper)

6

- Special option:

7

- A = Al2O3 DBC substrate

8

- PbF = Lead (Pb)-free

None = No special option

T = Thermistor

Device code

51324678

50 MT 060 U LS T A PbF

ORDERING INFORMATION TABLE

50MT060ULSTAPbF

Vishay Semiconductors

CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95175

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Document Number: 94540

DIMENSIONS in millimeters

Ø 1.1Ø 5

3.5

33

31.8

12 ± 0.5

4

20.5

2.5

87

6

543

2

1

13

9

10 11

12

1.8

8.1

45°

5.4 ± 0.1

5.7 ± 0.1

1.2 ± 0.1

7.2 ± 0.1

7.8 ± 0.1

3 ± 0.1

27.5

11.35

± 0.1

11.35

± 0.1

R2.6 (x 3)

R5.8 (x 2)

8.7 ± 0.1

6 ± 0.1

3 ± 0.1

8.5 ± 0.1

39.5 ± 0.1

44.5

48.7

63.5 ± 0.25

1.3

Outline Dimensions

Vishay Semiconductors

MTP

Note

• Unused terminals are not assembled in the package

Document Number: 95175 For technical questions, contact: [email protected] Revision: 18-Mar-08 1

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Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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