Datasheet 4N 35 VIS Datasheet (VISHAY)

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Page 1

4N35, 4N36, 4N37

Vishay Semiconductors

Optocoupler, Phototransistor Output, with Base Connection

FEATURES

21842

i179004-5

DESCRIPTION

Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.

AGENCY APPROVALS

•

Underwriters laboratory file no. E52744

• BSI: EN 60065:2002, EN 60950:2000

•

FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156

• Isolation test voltage 5000 V

RMS

• Interfaces with common logic families

• Input-output coupling capacitance < 0.5 pF

• Industry standard dual-in-line 6 pin package

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

APPLICATIONS

• AC mains detection

• Reed relay driving

• Switch mode power supply feedback

• Telephone ring detection

• Logic ground isolation

• Logic coupling with high frequency noise rejection

ORDER INFORMATION

PART REMARKS

4N35 CTR > 100 %, DIP-6

4N36 CTR > 100 %, DIP-6

4N37 CTR > 100 %, DIP-6

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

INPUT

Reverse voltage V

Forward current I

Surge current t ≤ 10 μs I

Power dissipation P

OUTPUT

Collector emitter breakdown voltage V

Emitter base breakdown voltage V

Collector current

Power dissipation P

COUPLER

Isolation test voltage V

Creepage ≥ 7mm

Clearance ≥ 7mm

Isolation thickness between emitter and detector

(1)

t ≤ 1 ms I

FSM

diss

CEO

EBO

diss

ISO

50 mA

70 mW

70 V

50 mA

100 mA

70 mW

5000 V

≥ 0.4 mm

RMS

Document Number: 81181 For technical questions, contact: [email protected] Rev. 1.2, 07-Jan-10 153

www.vishay.com

Page 2

4N35, 4N36, 4N37

Vishay Semiconductors

Optocoupler, Phototransistor Output,

with Base Connection

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

COUPLER

Comparative tracking index DIN IEC 112/VDE 0303, part 1 175

Isolation resistance

Storage temperature T

Operating temperature T

Junction temperature T

Soldering temperature

(2)

Notes

(1)

= 25 °C, unless otherwise specified.

amb

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.

(2)

Refer to wave profile for soldering condditions for through hole devices (DIP).

ELECTRICAL CHARACTERISTICS

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

INPUT

Junction capacitance V

Forward voltage

Reverse current

Capacitance V

OUTPUT

Collector emitter breakdown

(2)

voltage

Emitter collector breakdown

(2)

voltage

OUTPUT

Collector base breakdown

(2)

voltage

Collector emitter leakage current

Collector emitter capacitance V

COUPLER

Resistance, input output

Capacitance, input output f = 1 MHz C

Notes

(1)

= 25 °C, unless otherwise specified.

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

(2)

Indicates JEDEC registered value.

(2)

(1)

= 500 V, T

= 25 °C R

amb

= 100 °C R

amb

max.10 s dip soldering:

distance to seating plane

≥ 1.5 mm

(1)

= 0 V, f = 1 MHz C

IF = 10 mA V

= 10 mA, T

= - 55 °C V

amb

VR = 6 V I

= 0 V, f = 1 MHz C

4N35 BV

IC = 1 mA

4N36 BV

4N37 BV

IE = 100 μA BV

4N35 BV

IC = 100 μA, IB = 1 μA

4N36 BV

4N37 BV

VCE = 10 V, IF = 0

= 10 V, IF = 0 4N37 I

= 30 V, IF = 0,

= 100 °C

amb

= 0 C

4N35 I

4N36 I

4N35 I

4N36 I

4N37 I

VIO = 500 V R

stg

amb

sld

CEO

ECO

CBO

- 55 to + 150 °C

- 55 to + 100 °C

100 °C

260 °C

50 pF

1.3 1.5 V

0.9 1.3 1.7 V

0.1 10 μA

25 pF

30 V

70 V

550nA

500 μA

6pF

0.6 pF

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Document Number: 81181

154 Rev. 1.2, 07-Jan-10

Page 3

4N35, 4N36, 4N37

Optocoupler, Phototransistor Output,

Vishay Semiconductors

with Base Connection

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT

100 %

40 50 %

off

10 μs

DC current transfer ratio

Note

(1)

Indicates JEDEC registered values.

(1)

VCE = 10 V, IF = 10 mA

= 10 V, IF = 10 mA,

= - 55 °C to + 100 °C

4N35 CTR

4N36 CTR

4N37 CTR

4N35 CTR

4N36 CTR

4N37 CTR

SWITCHING CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Switching time

Note

(1)

Indicates JEDEC registered values.

(1)

VCC = 10 V, IC = 2 mA, RL = 100 Ω ton, t

TYPICAL CHARACTERISTICS

= 25 °C, unless otherwise specied

amb

1.4

1.3

1.2

1.1

1.0

0.9

-Forward Voltage (V)

0.8

0.7

i4n25_01

TA = - 55 °C

TA = 25 °C

TA = 85 °C

IF - Forward Current (mA)

Fig. 1 - Forward Voltage vs. Forward Current

1001010.1

Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.

1.5

Normalized to: V

= 10 V, IF = 10 mA, TA = 25 °C

CTR

CE(sat) VCE

1.0

= 50 °C

0.5

- Normalized CTR

CTR

0.0

i4n25_03

= 0.4 V

NCTR(SAT)

NCTR

1001010.1

IF - LED Current (mA)

LED Current

1.5 Normalized to:

= 10 V, IF = 10 mA, TA = 25 °C

CTR

= 0.4 V

CE(sat)

1.0

= 25 °C

0.5

NCTR - Normalized CTR

0.0

0 10 100

i4n25_02

IF - LED Current (mA)

NCTR(SAT)

NCTR

Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.

LED Current

Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.

1.5

Normalized to:

= 10 V, IF = 10 mA, TA = 25 °C

1.0

0.5

CTR

= 70 °C

CE(sat) VCE

= 0.4 V

NCTR - Normalized CTR

0.0

i4n25_04

IF - LED Current (mA)

LED Current

NCTR(SAT) NCTR

1001010.1

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Rev. 1.2, 07-Jan-10 155

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4N35, 4N36, 4N37

Vishay Semiconductors

1.5

Normalized to:

= 10 V, IF = 10 mA, TA = 25 °C

CTR

CE(sat) VCE

= 0.4 V

Optocoupler, Phototransistor Output,

1.0

= 85 °C

0.5

NCTR - Normalized CTR

0.0

i4n25_05

IF - LED Current (mA)

NCTR(SAT)

NCTR

1001010.1

Fig. 5 - Normalized Non-Saturated and Saturated CTR vs.

LED Current

50 °C

25 °C

85 °C

70 °C

- Collector Current (mA)

i4n25_06

IF - LED Current (mA)

Fig. 6 - Collector Emitter Current vs.

Temperature and LED Current

with Base Connection

Fig. 8 - Normalized CTRcb vs. LED Current and Temperature

6050403020100

Fig. 9 - Normalized Photocurrent vs. I

1.5

Normalized to:

VCB = 9.3 V, IF = 10 mA, TA = 25 °C

1.0

0.5

- Normalized CTR

25 °C 50 °C

NCTR

70 °C

0.0

0.1 1 10 100

i4n25_08

IF - LED Current (mA)

Normalized to: IF = 10 mA, TA = 25 °C

Normalized Photocurrent

Nib, TA = - 20 °C Nib, T Nib, T Nib, T

0.01

0.1 1 10 100

i4n25_09

IF - LED Current (mA)

= 20 °C

= 50 °C

= 70 °C

and Temperature

- Collector Emitter (nA)

- 1

CEO

- 2

i4n25_07

- Ambient Temperature (°C)

amb

VCE = 10 V

Typical

100806040200- 20

Fig. 7 - Collector Emitter Leakage Current vs. Temperature

1.2

1.0

70 °C

25 °C

- 20 °C

0.8

Normalized to: IB = 20 µA, VCE = 10 V,

- Normalized h

0.6

= 25 °C

0.4

1 10 100 1000

i4n25_10

Ib - Base Current (µA)

Fig. 10 - Normalized Non-Saturated h

Base Current and Temperature

vs.

www.vishay.com For technical questions, contact: [email protected]

Document Number: 81181

156 Rev. 1.2, 07-Jan-10

Page 5

4N35, 4N36, 4N37

Optocoupler, Phototransistor Output,

with Base Connection

1.5

50 °C

70 °C

1.0

25 °C

- 20 °C

0.5

= 0.4 V

- Normalized Saturated h

FE(sat)

0.0

1 10 100 1000

i4n25_11

Ib - Base Current (µA)

Fig. 11 - Normalized hFE vs. Base Current and Temperature

1000

IF = 10 mA, TA = 25 °C

= 5.0 V, Vth = 1.5 V

PHL

100

Normalized to:

VCE = 10 V, Ib = 20 µA

= 25 °C

2.5

2.0

Vishay Semiconductors

f = 10 kHz DF = 50 %

IF = 10 mA

i4n25_14

Fig. 14 - Switching Schematic

VCC = 5 V

- Propagation Delay (µs)

PLH

i4n25_12

PLH

0.1 1 10 100

RL - Collector Load Resistor (kΩ)

1.5

1.0

Fig. 12 - Propagation Delay vs. Collector Load Resistor

PHL

PLH

= 1.5 V

i4n25_13

Fig. 13 - Switching Timing

- Propagation Delay (µs)

PHL

Document Number: 81181 For technical questions, contact: [email protected]

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Rev. 1.2, 07-Jan-10 157

Page 6

4N35, 4N36, 4N37

Vishay Semiconductors

Optocoupler, Phototransistor Output,

PACKAGE DIMENSIONS in millimeters

3.5 ± 0.3

0.5 ± 0.1

6 5 4

14771_2

1 2 3

with Base Connection

7.12 ± 0.3

4.5 ± 0.3

1.2 ± 0.1

2.8 ± 0.15

0.25

7.62 typ.

6.5 ± 0.3

4.5 ± 0.3

7.62 to 9.5 typ.

PACKAGE MARKING

4N35

V YWW 24

21764-24

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Document Number: 81181

Page 7

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Vishay

Disclaimer

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Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000