Datasheet 4AK27 Datasheet (HIT)

Features

e

• Low on-resistance

R

≤ 0.15Ω, VGS = 10V, ID = 3.0A

DS(on)

• 4V gate drive devices.

• High density mounting

Outline

4AK27

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-728 (Z)

1st. Edition

January 1999

SP-10

G

2

S

1

1

2

3

10

4

5

6

7

8

9

10

1, 10. Sourc
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain

3

D

4

G

5

D

6

G

7

D

8

G

9

D

S

4AK27

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy1 E
Channel dissipation Pch(Tc=25˚C)
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

AP

AR

Note1

Note2

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 4 devices poeration

3. Value at Tch=25˚C, Rg ≥ 50Ω

60 V
±20 V
5A
20 A
5A
5A

2.1 mJ
28 W
4W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state resistance R
Static drain to source on state resistance R

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 3.0 5.5 — S ID = 3A, VDS = 10V
Input capacitance Ciss — 390 — pF VDS = 10V
Output capacitance Coss — 190 — pF VGS = 0
Reverse transfer capacitance Crss — 45 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse recovery time t

d(on)

r

d(off)

f

DF

rr

Note: 4. Pulse test

60 — — V ID = 10mA, VGS = 0
±20 — — V IG = ±100µA, VDS = 0
— — 100 µAVDS = 50 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0

1.0 — 2.25 V ID = 1mA, VDS = 10V
— 0.12 0.15 Ω ID = 3A, VGS = 10V
— 0.15 0.2 Ω ID = 3A, VGS = 4V

— 10 — ns VGS = 10V, ID = 3A
— 42 — ns RL = 10Ω
—90—ns
—55—ns
— 1.0 — V IF = 5A, VGS = 0
— 60 — ns IF = 5A, VGS = 0

diF/ dt =50A/µs

4AK27

Note4

Note4

Note4

3

4AK27

Main Characteristics

Maximum Channel Dissipation Curve

6

Condition : Channel Dissipation of
each die is identical

4 Device Operation

4

2

Channel Dissipation Pch (W)

0 10050 150

Ambient Temperature Tc (°C)

Typical Output Characteristics

10

8

D

6

3 Device Operation

2 Device Operation

1 Device Operation

10 V

5 V
4 V

3.5 V

Pulse Test

3 V

Maximum Channel Dissipation Curve

30

20

10

Channel Dissipation Pch (W)

0 10050 150

10

8

D

6

Condition : Channel Dissipation of
each die is identical

4 Device Operation

3 Device Operation

2 Device
Operation

1 Device
Operation

Case Temperature Tc (°C)

Typical Transfer Characteristics

V = 10 V

DS

Pulse Test

4

Drain Current I (A)

2

0

Drain to Source Voltage V (V)

4

2.5 V

V = 2 V

GS

246810

DS

4

Drain Current I (A)

2

0 12345

75 °C

Gate to Source Voltage V (V)

–25 °C

Tc = 25 °C

GS

4AK27

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1.0
Pulse Test

0.8

DS(on)

V (V)

0.6

5 A

0.4

2 A

0.2

I = 1 A

D

Drain to Source Sasuration Voltage

0246810

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

vs. Temperature

0.5

Ω

Pulse Test

0.4

DS(on)

R ( )

0.3

I = 5 A

D

2 A

1 A

Static Drain to Source State Resistance

vs. Drain Current

1

Ω

Pulse Test

0.5

DS(on)

R ( )

0.2
4 V

0.1

Drain to Source On State Resistance

0.05

0.1

0.2 0.5 1 2 5 10 20 50

V = 10 V

GS

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

20

V = 10 V

DS

Pulse Test

10

5

V = 4 V

0.2

GS

5 A

0.1

10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

1 A
2 A

2

Tc = –25 °C

25 °C
75 °C

1

Forward Transfer Admittance |yfs| (S)

0.5

0.1

0.2 0.5 1 2 5 10
Drain Current I (A)

D

5

4AK27

Body to Drain Diode Reverse

Recovery Time

500

di/dt = 50 A/µs, Ta = 25°C
V = 0, Pulse Test

200

GS

100

50

20
10

Reverse Recovery Time trr (ns)

5

0.1 0.2 0.5 1 2 5 10
Reverse Drain Current I (A)

Dynamic Input Characteristics

100

V = 50 V

DS

80

DD

25 V
10 V

60

V

DS

V

GS

40

I = 5 A

20

V = 10 V

DD

25 V

Drain to Source Voltage V (V)

0

4 8 12 16 20

50 V

Gate Charge Qg (nc)

DR

D

Typical Capacitance vs.
Drain to Source Voltage

1000

500

200

100

50

Capacitance C (pF)

V = 0

20

GS

f = 1 MHz

10

10 20 30 40 50

0

Drain to Source Voltage V (V)

Switching Characteristics

20

500

V = 10 V, V = 30 V

GS

PW = 5 µs, duty < 1 %

GS

200

16

100

12

50

8

20

Switching Time t (ns)

4

Gate to Source Voltage V (V)

0

10

5

0.1

0.2 0.5 1 2 5 10
Drain Current I (A)

DD

t

d(off)

t

Ciss

Coss

Crss

f

t

r

t

d(on)

D

DS

6

4AK27

Reverse Drain Current vs.

Source to Drain Voltage

10

8

DR

10 V

6

V = 0, –5 V

4

5 V

2

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Drain to Source Voltage V (V)

V

DS

Monitor

Rg

Vin
15 V

50Ω

2.5

Pulse Test

AR

2

1.5

GS

1

0.5

0

Repetive Avalanche Energy E (mJ)

25 50 75 100 125 150

DS

Channel Temperature Tch (°C)

Avalanche Test Circuit and Waveform

E = • L • I •

L

I

AP

AR

Monitor

I

AP

D. U. T

V

DD

V

DD

0

Maximun Avalanche Energy vs.

Channel Temperature Derating

I = 5 A

AP

V = 25 V

DD

duty < 0.1 %
Rg > 50

V

1

2

AP

2

DSS

V– V

DSS DD

V

V

DS

I

D

Ω

(BR)DSS

7

4AK27

Package Dimensions

Unit: mm

26.5 ± 0.3

1.82 2.54 1.4

1234

56

8910

7

10.0 ± 0.310.5 ± 0.5

2.5

0.55 ± 0.1

4.0 ± 0.2

1.5 ± 0.2

+0.1

0.55

–0.06

Hitachi Code
JEDEC
EIAJ

SP-10

—
—

8

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