Datasheet 4AK19 Datasheet (HIT)

Features

• Low on-resistance

N Channel: R

≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A

DS(on)

R

≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A

DS(on)

• 4 V gate drive devices.

• High density mounting

Outline

4AK19

Silicon N Channel MOS FET High Speed Power Switching

ADE-208-727 (Z)

1st. Edition

February 1999

SP-10

G

2

1

2

3

10

4

5

6

7

8

9

10

1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain

3 D

4

G

S

5 D

6

G

7 D

8

G

9 D

S

4AK19

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

Note1

Channel dissipation Pch(Tc = 25°C) Channel dissipation Pch

Note2

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. 4 devices poeration

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V Gate to source breakdown voltage V Zero gate voltege drain current I Gate to source leak current I Gate to source cutoff voltage V Static drain to source on state

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

R

DS(on)

resistance Static drain to source on state

R

DS(on)

resistance Forward transfer admittance |yfs|35—SI Input capacitance Ciss — 25 — pF VDS = 10 V Output capacitance Coss — 140 — pF VGS = 0 Reverse transfer capacitance Crss — 3 — pF f = 1 MHz Gate series resistance Rg — 2.5 — kΩ VDS = 0, VGS = 0, f = 1 MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time Note: 3. Pulse test

120 — — V ID = 10 mA, VGS = 0 ±20——V I — — 100 µAVDS = 100 V, VGS = 0 ——±10 µAVGS = ±16 V, VDS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V — 0.3 0.5 Ω ID = 2.5 A, VGS = 10 V

— 0.35 0.6 Ω ID = 2.5 A, VGS = 4 V

— 0.3 — µsVGS = 10 V, ID = 2.5 A — 0.45 — µsR — 6.6 — µs — 1.4 — µs — 1.1 — V IF = 5 A, VGS = 0 — 600 — ns IF = 5 A, VGS = 0

120 V ±20 V 5A 10 A 5A

Note2

28 W

3.5 W

= ±100 µA, VDS = 0

G

= 2.5 A, VDS = 10 V

D

= 12 Ω

L

diF/ dt = 50A/ µs

Note3

2

Main Characteristics

4AK19

Maximum Channel Dissipation Curve

8

Condition : Channel dissipation of

each die is idetical

6

4 Device Operation

4

3 Device Operation 2 Device Operation 1 Device Operation

2

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Maximum Safe Operation Area

50 20

10

D

5

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

10 µs

100 µs

1 ms

2 1

0.5

Operation in

Drain Current I (A)

this area is

0.2

limited by R

DS(on)

0.1 Ta = 25 °C

0.05 1 3 10 30 100 300 1000

Drain to Source Voltage V (V)

DS

Maximum Channel Dissipation Curve

46

Condition : Channel dissipation of

each die is idetical

32

4 Device Operation

28

3 Device Operation 2 Device Operation 1 Device Operation

14

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

5

10 V

4 V

4

D

3

2

2.5 V

Drain Current I (A)

1

V = 2 V

GS

0

4 8 12 16 20

Drain to Source Voltage V (V)

Pulse Test

3 V

DS

3

4AK19

Typical Transfer Characteristics

5

V = 10 V

DS

Pulse Test

4

D

3

2

Tc = 75°C

Drain Current I (A)

1

0

12345

Gate to Source Voltage V (V)

25°C

–25°C

GS

Static Drain to Source on State Resistance

vs. Drain Current

5

Pulse Test

Ω

2

DS(on)

1

R ( )

0.5

0.2

V = 4 V

GS

10 V

0.1

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.0

1.6

DS(on)

Pulse Test

I = 5 A

D

1.2

0.8 2 A

0.4

1 A

Drain to Source Voltage V (V)

0

246810

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

vs. Temperature

1.0

Ω

Pulse Test

0.8

DS(on)

R ( )

0.6

0.4

V = 4 V

GS

I = 5 A

D

1 A, 2 A

10 V

0.2

2 A 1 A

5 A

Drain to Source On State Resistance

0.05

0.1

0.2 0.5 1 2 5 10 20 Drain Current I (A)

4

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

D

Case Temperature Tc (°C)

4AK19

Forward Transfer Admittance vs.

Drain Current

10

5

Tc = –25 °C

2

75 °C

1

25 °C

0.5

0.2

Forward Transfer Admittance |yfs| (S)

0.1

0.2 0.5 Drain Current I (A)

V = 10 V

DS

Pulse Test

1

2510

D

Typical Capacitance vs. Drain to Source Voltage

1000

V = 0

300 100

30

Coss

Ciss

GS

f = 1 MHz

10

3

Capacitance C (pF)

1

0.3

Crss

0.1 01020304050

Drain to Source Voltage V (V)

DS

Body–Drain Diode Reverse

Recovery Time

5000

2000 1000

500

200

100

Reverse Recovery Time trr (ns)

50

0.2 0.5 1 2 5 10

0.1

di/dt = 50 A/µs V = 0, Ta = 25°C

GS

Reverse Drain Current I (A)

Dynamic Input Characteristics

100

V

DS

80

60

V

DS

GS

V = 25 V

DD

40

20

Drain to Source Voltage V (V)

0

V = 25 V

DD

50 V 80 V

4 8 12 16 20

I = 5 A

Gate Charge Qg (nc)

D

DR

50 V 80 V

20

16

GS

12

8

4

Gate to Source Voltage V (V)

0

5

4AK19

10

5

2

1

0.5

Switching Time t (µs)

0.2

0.1

0.1 0.2 0.5 1 2 5 10

Switching Time Test Circuit Waveform

Switching Characteristics

t

d(off)

t

f

t

r

V = 10 V, V = 30 V

GS

DD

PW = 20 µs, duty < 1 %

Drain Current I (A)

D

t

d(on)

Reverse Drain Current vs.

Souece to Drain Voltage

5

Pulse Test

4

DR

3

5, 10 V

2

V = 0, –5 V

GS

1

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Drain to Source Voltage V (V)

DS

Vin Monitor

Vin 10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout Monitor

Vin

Vout

td(on)

10%

90%

tr

90%

td(off)

90%

10%

t

f

6

Package Dimensions

4AK19

Unit: mm

26.5 ± 0.3

1.82 2.54 1.4

1234

56

8910

7

10.0 ± 0.310.5 ± 0.5

2.5

0.55 ± 0.1

4.0 ± 0.2

1.5 ± 0.2

+0.1

0.55

–0.06

Hitachi Code JEDEC EIAJ

SP-10

— —

7

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