Datasheet 4AK18 Datasheet (HIT)

4AK18

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

• Low on-resistance

R

≤ 0.38 , VGS = 10 V, ID = 1 A

DS(on)

R

≤ 0.53 , VGS = 4 V, ID = 1 A

DS(on)

• Capable of 4 V gate drive

• Low drive current

• High speed switching

• High density mounting

• Suitable for motor driver, solenoid driver and lamp driver

4AK18

Outline

SP-10

3
D

4

2 G

1 S

G

Absolute Maximum Ratings (Ta = 25°C) (1 Unit)

5
D

6

G

7
D

8

G

1

2

9
D

S 10

3

4

5

6

7

8

9

1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain

10

Item Symbol Rating Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

1

*

60 V
±20 V

2.5 A
10 A

2.5 A
Channel dissipation Pch (Tc = 25°C)*228 W
Channel dissipation Pch*

2

4W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. 4 devices operation

2

Electrical Characteristics (Ta = 25°C) (1 Unit)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 1.2 2.0 — S ID = 1 A

Input capacitance Ciss — 240 — pF VDS = 10 V
Output capacitance Coss — 115 — pF VGS = 0
Reverse transfer capacitance Crss — 35 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse Test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
— — 100 µAVDS = 50 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.25 0.38 Ω ID = 1 A

V

= 10 V*

GS

— 0.40 0.53 Ω ID = 1 A

V

= 4 V*

GS

V

= 10 V*

DS

—4 —nsI

= 1 A

D

1

1

1

— 15 — ns VGS = 10 V
— 80 — ns RL = 30 Ω
—40—ns
— 1.0 — V IF = 2 A, VGS = 0

— 70 — ns IF = 2 A, VGS = 0

dIF/dt = 50 A/µs

4AK18

3

4AK18

Maximum Channel Dissipation Curve

6

Condition : Channel Dissipation of
each die is identical

5

4

3

4 Device Operation
3 Device Operation

2 Device Operation
1 Device Operation

2

1

Channel Dissipation Pch (W)

0 50 100 150

1257525

Ambient Temperature Ta (°C)

Maximum Safe Operation Area

100

30

(A)

D

10

10 µs

100 µs

3

1.0

Operation in this area

Drain Current I

0.3

is limited by R

Ta = 25°C

DS (on)

PW = 10 ms (1 shot)

1 ms

DC Operation

(T

C

= 25°C)

0.1 0.3 1.0 3 10 30 100
Drain to Source Voltage V

DS

(V)

Maximum Channel Dissipation Curve

30

Condition : Channel Dissipation
of each die is identical

4 Device Operation
3 Device Operation

20

2 Device Operation
1 Device Operation

10

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

1257525

Typical Output Characteristics

5

10 V

4

(A)

D

3

2

Drain Current I

1

5 V

4 V

3.5 V

2.5 V

Pulse Test

3 V

VGS = 2 V

0

0

Drain to Source Voltage V

6

DS

842 10

(V)

4

Typical Transfer Characteristics

5

–25°C

VDS = 10 V

4

Pulse Test

(A)

D

3

TC= 25°C

2

Drain Current I

1

3

0

Gate to Source Voltage V

42105

(V)

GS

75°C

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2.0

1.6

1.2

(V)

DS (on)

0.8

V

0.4

Drain to Source Saturation Voltage

0

Gate to Source Voltage V

4AK18

Pulse Test

5 A

2 A

ID = 1 A

6

842010

(V)

GS

Static Drain to Source on State

Resistance vs. Drain Current

5

Pulse Test

2

1.0

(Ω)

0.5

DS (on)

R

0.2

VGS = 4 V

0.1

0.05

Static Drain to Source on State Resistance

0.2
Drain Current I

2

51.00.5 20

(A)

D

10 V

10

Static Drain to Source on State

Resistance vs. Temperature

1.0

Pulse Test

0.8

ID = 2 A

0.6

(Ω)

DS (on)

0.4

R

0.2

0

Static Drain to Source on State Resistance

–40

VGS = 4 V

VGS = 10 V

Case Temperature T

80

1 A

1 A, 2 A

120400

(°C)

C

5 A

160

5

4AK18

10

5

2

1.0

0.5

0.2

Forward Transfer Admittance yfs (S)

0.1

0.05 0.1 0.2

1000

300

100

30

Forward Transfer Admittance

vs. Drain Current

VDS = 10 V
Pulse Test

–25°C

TC = 25°C

75°C

1.0

0.5

Drain Current I

D

(A)

Typical Capacitance vs.
Drain to Source Voltage

VGS = 0
f = 1 MHz

Ciss

Coss

Crss

Body to Drain Diode Reverse

Recovery Time

500

di/dt = 50 A/µs, Ta = 25°C

200

(ns)

rr

VGS = 0
Pulse Test

100

50

20
10

Reverse Recovery Time t

5

2

5

0.2 0.5 2

1.0

Reverse Drain Current I

5

10

20

(A)

DR

Dynamic Input Characteristics

100

(V)

DS

80

60

40

V

DS

VDD = 50 V

VDD = 50 V

25 V
10 V

V

GS

20

16

12

8

(V)

GS

Capacitance C (pF)

3

1

01020

Drain to Source Voltage VDS (V)

6

301040

50

20

Drain to Source Voltage V

02 6

25 V
10 V

4

Gate Charge Qg (nc)

ID = 2 A

8

4

Gate to Source Voltage V

10

100

Switching Characteristics

50

20

10

5

Switching Time t (ns)

2

VGS = 10 V VDD = 30 V
PW = 2µs, duty < 1 %

1

0.05 0.1 0.5

0.2

Drain Current I

t

f

t

d (off)

•

•

1.0

D

t

d (on)

(A)

4AK18

Reverse Drain Current vs.

Source to Drain Voltage

5

Pulse Test

4

(A)

DR

t

r

2

1

Reverse Drain Current I

0 0.4 1.2

5

2

3

10 V
15 V

5 V

VGS = 0, –5 V

0.8

Source to Drain Voltage V

1.6

SD

2.0

(V)

7

Unit: mm

26.5 ± 0.3

1.82 2.54 1.4

1234

56

8910

7

10.0 ± 0.310.5 ± 0.5

2.5

0.55 ± 0.1

4.0 ± 0.2

1.5 ± 0.2

0.55

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

+0.1
–0.06

SP-10
—
—

2.9 g

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