Datasheet 4AK17 Datasheet (HIT)

4AK17

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

• Low on-resistance

R

≤ 0.045 , VGS = 10 V, ID = 10 A

DS(on)

R

≤ 0.065 , VGS = 4 V, ID = 10 A

DS(on)

• Capable of 4 V gate drive

• Low drive current

• High speed switching

• High density mounting

• Suitable for motor driver, solenoid driver and lamp driver

4AK17

Outline

SP-10

3
D

4

2 G

1 S

G

Absolute Maximum Ratings (Ta = 25°C) (1 Unit)

5
D

6

G

7
D

8

G

1

2

9
D

S 10

3

4

5

6

7

8

9

1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain

10

Item Symbol Rating Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

1

*

60 V
±20 V
10 A
40 A

10 A
Channel dissipation Pch (Tc = 25°C)*228 W
Channel dissipation Pch*

2

4W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. 4 devices operation

2

Electrical Characteristics (Ta = 25°C) (1 Unit)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs|1017—SI

Input capacitance Ciss — 1400 — pF VDS = 10 V
Output capacitance Coss — 720 — pF VGS = 0
Reverse transfer capacitance Crss — 220 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.033 0.045 Ω ID = 10 A

V

= 10 V*

GS

— 0.04 0.065 Ω ID = 10 A

V

= 4 V*

GS

= 10 A

D

V

= 10 V*

DS

1

1

1

— 15 — ns ID = 10 A
— 95 — ns VGS = 10 V
— 300 — ns RL = 3 Ω
— 170 — ns
— 1.05 — V IF = 10 A, VGS = 0

— 110 — ns IF = 10 A, VGS = 0

dIF/dt = 50 A/µs

4AK17

3

4AK17

Maximum Channel Dissipation Curve

6

Condition : Channel Dissipation of
each die is identical

5

4

3

4 Device Operation
3 Device Operation

2 Device Operation
1 Device Operation

2

1

Channel Dissipation Pch (W)

0 50 100 150

Ambient Temperature Ta (°C)

Maximum Safe Operation Area

100

10 µs

(A)

D

30

10

DS (on)

Operation in this area

is limited by R

DC Operation (T

PW = 10 ms (1 shot)

100 µs

1 ms

3

Maximum Channel Dissipation Curve

30

Condition : Channel Dissipation
of each die is identical

4 Device Operation
3 Device Operation

20

2 Device Operation
1 Device Operation

10

Channel Dissipation Pch (W)

1257525

0 50 100 150

Case Temperature T

(°C)

C

1257525

Typical Output Characteristics

(A)

D

50

40

30

10 V

6 V

8 V

4.5 V

4.0 V
Pulse Test

3.5 V

20

1.0

Drain Current I

0.3
Ta = 25°C

0.1

0.1

0.3 1.0 3 10 30 100

Drain to Source Voltage V

C

= 25°C)

DS

(V)

Drain Current I

10

0

0

Drain to Source Voltage V

3.0 V

VGS = 2.5 V

6

84210

(V)

DS

4

4AK17

Typical Transfer Characteristics

50

VDS = 10 V

40

Pulse Test

(A)

D

30

20

Drain Current I

10

0

Gate to Source Voltage V

Static Drain to Source on State

0.5

Pulse Test

0.2

0.1

0.05

(on) (Ω)

DS

R

0.02

0.01

75°C

TC= 25°C

–25°C

3

42105

(V)

GS

Resistance vs. Drain Current

VGS = 4 V

10 V

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

5

Pulse Test

4

3

(V)

DS (on)

2

V

1

Drain to Source Saturation Voltage

0

6

Gate to Source Voltage V

Static Drain to Source on State

Resistance vs. Temperature

0.10

Pulse Test

ID = 20 A

0.08

0.06

(Ω)

DS (on)

0.04

R

0.02

VGS = 4 V

VGS = 10 V

10 A

10 A

ID = 50 A

20 A
10 A

842010

(V)

GS

5 A

20 A

5 A

0.005

Static Drain to Source on Static Resistance

1

Drain Current I

10

2052 100

(A)

D

50

0

Static Drain to Source on State Resistance

–40

Case Temperature T

80

(°C)

C

120400

160

5

4AK17

Forward Transfer Admittance

100

VDS = 10 V
Pulse Test

50

20

10

5

2

Forward Transfer Admittance yfs (S)

1

0.5 1.0 2
Drain Current I

Typical Capacitance vs.
Drain to Source Voltage

10,000

3,000

1,000

300

100

Capacitance C (pF)

30

10

01020

Drain to Source Voltage VDS (V)

vs. Drain Current

–25°C

TC = 25°C

10

5

(A)

D

Ciss
Coss

Crss

30

75°C

20

VGS = 0
f = 1 MHz

40

50

50

Body to Diode Reverse

Recovery Time

1,000

di/dt = 50 A/µs, Ta = 25°C
VGS = 0

(ns)

rr

500

Pulse Test

200

100

50

20

Reverse Recovery Time t

10

0.5 1.0 5
Reverse Drain Current I

Dynamic Input Characteristics

100

VDD = 50 V

(V)

DS

80

60

V

DS

25 V
10 V

40

20

Drain to Source Voltage V

020 60

VDD = 50 V
25 V
10 V

40

Gate Charge Qg (nc)

V

GS

ID = 25 A

10220

DR

80

(A)

100

50

20

(V)

16

GS

12

8

4

Gate to Source Voltage V

0

6

1000

Switching Characteristics

500

200

100

t

50

Switching Time t (ns)

20

t

t

d (off)

t

f

r

VGS = 10 V VDD = 30 V
PW = 2µs, duty < 1 %

d (on)

4AK17

Reverse Drain Current vs.

Source to Drain Voltage

50

Pulse Test

40

(A)

DR

30

20

•

•

10

Reverse Drain Current I

10 V
15 V

5 V

VGS = 0, –5 V

10

0.5 1.0 5
Drain Current I

10220

(A)

D

50

0 0.4 1.2

0.8

Source to Drain Voltage V

1.6

SD

2.0

(V)

7

Unit: mm

26.5 ± 0.3

1.82 2.54 1.4

1234

56

8910

7

10.0 ± 0.310.5 ± 0.5

2.5

0.55 ± 0.1

4.0 ± 0.2

1.5 ± 0.2

0.55

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

+0.1
–0.06

SP-10
—
—

2.9 g

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