Datasheet 4AK16 Datasheet (HIT)

4AK16

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

• Low on-resistance

R

≤ 0.18 , VGS = 10 V, ID = 5 A

DS(on)

R

≤ 0.25 , VGS = 4 V, ID = 5 A

DS(on)

• Capable of 4 V gate drive

• Low drive current

• High speed switching

• High density mounting

• Suitable for motor driver, solenoid driver and lamp driver

4AK16

Outline

SP-10

3
D

4

2 G

1 S

G

Absolute Maximum Ratings (Ta = 25°C) (1 Unit)

5
D

6

G

7
D

8

G

1

2

9
D

S 10

3

4

5

6

7

8

9

1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain

10

Item Symbol Rating Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

1

*

60 V
±20 V
5A
20 A

5A
Channel dissipation Pch (Tc = 25°C)*228 W
Channel dissipation Pch*

2

4W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. 4 devices operation

2

Electrical Characteristics (Ta = 25°C) (1 Unit)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 3.5 6.0 — S ID = 5 A

Input capacitance Ciss — 400 — pF VDS = 10 V
Output capacitance Coss — 220 — pF VGS = 0
Reverse transfer capacitance Crss — 60 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.12 0.18 Ω ID = 5 A

V

= 10 V*

GS

— 0.17 0.25 Ω ID = 5 A

V

= 4 V*

GS

V

= 10 V*

DS

—5 —nsI

= 5 A

D

1

1

1

— 55 — ns VGS = 10 V
— 140 — ns RL = 6 Ω
—90—ns
— 1.0 — V IF = 5 A, VGS = 0

— 100 — ns IF = 5 A, VGS = 0

dIF/dt = 50 A/µs

4AK16

3

4AK16

Maximum Channel Dissipation Curve

6

Condition : Channel Dissipation of
each die is identical

5

4

3

4 Device Operation
3 Device Operation

2 Device Operation
1 Device Operation

2

1

Channel Dissipation Pch (W)

0 50 100 150

1257525

Ambient Temperature Ta (°C)

Maximum Safe Operation Area

50

(A)

D

30

10

DS (on)

PW = 10 ms (1 shot)

DC Operation (T

10 µs

100 µs

1 ms

3

Operation in this area

is limited by R

1.0

Drain Current I

0.3
Ta = 25°C

0.1

C

= 25°C)

0.05

0.1

0.3 1.0 3 10 30 100

Drain to Source Voltage V

DS

(V)

Maximum Channel Dissipation Curve

30

Condition : Channel Dissipation
of each die is identical

4 Device Operation
3 Device Operation

20

2 Device Operation
1 Device Operation

10

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

1257525

Typical Output Characteristics

10

8

10 V

4 V
5 V

Pulse Test

3.5 V

6

3.0 V

2.5 V

Drain Current ID (A)

4

2

VGS = 2.0 V

0

0

Drain to Source Voltage V

6

842 10

DS

(V)

4

Typical Transfer Characteristics

10

VDS = 10 V

Pulse Test

8

(A)

D

6

4

Drain Current I

2

75°C

–25°C

TC= 25°C

0

Gate to Source Voltage V

3

GS

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2.0

1.6

1.2

(V)

DS (on)

0.8

V

0.4

Drain to Source Saturation Voltage

421.005
(V)

0

Gate to Source Voltage V

4AK16

Pulse Test

10 A

5 A

ID = 2 A

6

842010

(V)

GS

Static Drain to Source on State

Resistance vs. Drain Current

1.0

Pulse Test

(Ω)

DS (on)

R

0.05

0.5

0.2

0.1

VGS = 4 V

10 V

0.02

0.01

Static Drain to Source on State Resistance

0.5
Drain Current I

5

1021.0 50
(A)

D

20

Static Drain to Source on State

Resistance vs. Temperature

0.5

Pulse Test

0.4

ID = 10 A

5 A

2 A

(Ω)

R

(on)
DS

0.3

VGS = 4 V

0.2

0.1

VGS = 10 V

0

Static Drain to Source on State Resistance

40

Case Temperature T

10 A

800–40 160

120

(°C)

C

5 A

2 A

5

4AK16

Forward Transfer Admittance

vs. Drain Current

50

VDS = 10 V
Pulse Test

20

10

5

2

1.0

Forward Transfer Admittance yfs (S)

0.5

0.1 0.2 0.5
Drain Current I

Typical Capacitance vs.
Drain to Source Voltage

10000

3000

1000

300

100

Capacitance C (pF)

30

10

01020

Drain to Source Voltage VDS (V)

1.0

–25°C

Ciss
Coss

Crss

TC = 25°C

2

(A)

D

VGS = 0
f =1MHz

30

5

40

75°C

10

50

Body to Drain Diode Reverse

Recovery Time

500

di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test

200

(ns)

rr

100

50

20

10

Reverse Recovery Time t

5

0.5 1.0 5
Reverse Drain Current IDR (A)

Dynamic Input Characteristics

100

(V)

80

DS

VDD = 50 V

25 V

60

40

V

DS

VDD = 50 V

10 V

20

Drain to Source Voltage V

04 12

25 V
10 V

8

Gate Charge Qg (nc)

V

GS

10220

ID = 10 A

16

20

50

20

(V)

16

GS

12

8

4

Gate to Source Voltage V

0

6

500

200

Switching Characteristics

t

d (off)

(A)

DR

20

16

4AK16

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

100

50

VGS = 10 V VDD = 30 V
PW = 2 µs, duty < 1 %

20

Switching Time t (ns)

10

5

0.1 0.2 0.5
Drain Current ID (A)

t

f

•

•

1.0

t

d (on)

12

8

10 V

15 V

t

r

4

Reverse Drain Current I

5 V

VGS = 0, – 5 V

2

Source to Drain Voltage V

10

0 0.4 1.2

5

0.8

1.6

SD

2.0

(V)

7

Unit: mm

26.5 ± 0.3

1.82 2.54 1.4

1234

56

8910

7

10.0 ± 0.310.5 ± 0.5

2.5

0.55 ± 0.1

4.0 ± 0.2

1.5 ± 0.2

0.55

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

+0.1
–0.06

SP-10
—
—

2.9 g

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