Datasheet 4AK15 Datasheet (HIT)

4AK15

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

• Low on-resistance

R

≤ 0.07 , VGS = 10 V, ID = 8 A

DS(on)

R

≤ 0.095 , VGS = 4 V, ID = 8 A

DS(on)

• Capable of 4 V gate drive

• Low drive current

• High speed switching

• High density mounting

• Suitable for motor driver, solenoid driver and lamp driver

4AK15

Outline

SP-10

3
D

4

2 G

1 S

G

Absolute Maximum Ratings (Ta = 25°C) (1 Unit)

5
D

6

G

7
D

8

G

1

2

9
D

S 10

3

4

5

6

7

8

9

1, 10. Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain

10

Item Symbol Rating Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

1

*

±60 V
±20 V

8A
32 A

8A
Channel dissipation Pch (Tc = 25°C)*228 W
Channel dissipation Pch*

2

4W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. 4 devices operation

2

Electrical Characteristics (Ta = 25°C) (1 Unit)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 7 12 — S ID = 8 A

Input capacitance Ciss — 860 — pF VDS = 10 V
Output capacitance Coss — 450 — pF VGS = 0
Reverse transfer capacitance Crss — 140 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.055 0.07 Ω ID = 8 A

V

= 10 V*

GS

— 0.075 0.095 Ω ID = 8 A

V

= 4 V*

GS

V

= 10 V*

DS

1

1

1

— 10 — ns ID = 8 A
— 70 — ns VGS = 10 V
— 180 — ns RL = 3.75 Ω
— 120 — ns
— 1.05 — V IF = 8 A, VGS = 0

— 110 — ns IF = 8 A, VGS = 0

dIF/dt = 50 A/µs

4AK15

3

4AK15

Maximum Channel Dissipation Curve

6

Condition : Channel Dissipation of
each die is identical

5

4 Device Operation
3 Device Operation

4

2 Device Operation
1 Device Operation

3

2

1

Channel Dissipation Pch (W)

25 50 75 100 125 1500

Ambient Temperature Ta (°C)

Maximum Safe Operation Area

50

(A)

D

20
10

5

Operation in this area

is limited by R

DS (on)

PW = 10 ms (1 Shot)

DC Operation (T

2

1.0

0.5

Drain Current I

0.2
Ta = 25°C

0.1

0.05

0.1 0.3 3 30

1.0 10 100

Drain to Source Voltage V

1 ms

C

= 25°C)

10 µs

100 µs

(V)

DS

Maximum Channel Dissipation Curve

30

Condition : Channel Dissipation of
each die is identical

20

10

Channel Dissipation Pch (W)

25 50 75 100 125 1500

Case Temperature T

Typical Output Characteristics

20

10 V

4 V

5 V

(A)

D

16

12

8

Drain Current I

4

0

0

VGS = 2.5 V

Drain to Source Voltage V

4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation

(°C)

C

Pulse Test

3.5 V

3.0 V

6

842 10

(V)

DS

4

Typical Transfer Characteristics

20

VDS = 10 V

16

Pulse Test

(A)

D

12

8

Drain Current I

4

75°C

–25°C

TC= 25°C

0

Gate to Source Voltage V

3

GS

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2.0

1.6

1.2

(V)

DS (on)

0.8

V

0.4

Drain to Source Saturation Voltage

42105

(V)

0

Gate to Source Voltage V

4AK15

Pulse Test

20 A

10 A

ID = 5 A

6

842010

(V)

GS

Static Drain to Source on State

Resistance vs. Drain Current

0.5

0.2

Pulse Test

VGS = 4 V

0.1

(Ω)

10 V

0.05

DS (on)

R

0.02

0.01

0.005

Static Drain to Source on State Resistance

1

Drain Current I

10

2052 100

(A)

D

50

Static Drain to Source on State

Resistance vs. Temperature

0.20

Pulse Test

0.16

ID = 10 A

0.12

(Ω)

5 A

VGS = 4 V

DS (on)

0.08

R

0.04

0

Static Drain to Source on State Resistance

–40

VGS = 10 V

Case Temperature T

80

20 A

(°C)

C

5 A

10 A

120400

160

5

4AK15

Forward Transfer Admittance

50

VDS = 10 V
Pulse Test

20

10

5

2

1.0

Forward Transfer Admittance yfs (S)

0.5

0.2 0.5 1.0
Drain Current I

Typical Capacitance vs.
Drain to Source Voltage

10000

3000

1000

300

100

Capacitance C (pF)

30

10

01020

Drain to Source Voltage VDS (V)

vs. Drain Current

–25°C

TC = 25°C

2

(A)

D

Ciss

Coss

Crss

30

75°C

5

VGS = 0
f = 1MHz

40

10

20

50

Body to Drain Diode Reverse

Recovery Time

1000

di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test

(ns)

rr

500

200

100

50

20

Reverse Recovery Time t

10

0.5 1.0 5
Reverse Drain Current I

Dynamic Input Characteristics

100

(V)

80

DS

VDD = 50 V

25 V

60

V

DS

10 V

40

20

Drain to Source Voltage V

08 24

VDD = 50 V
25 V
10 V

16

Gate Charge Qg (nc)

V

GS

ID = 15 A

10220

DR

32

(A)

50

20

(V)

16

GS

12

8

4

Gate to Source Voltage V

0

40

6

500

200

100

Switching Characteristics

t

d (off)

t

f

(A)

DR

20

16

12

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

10 V

15 V

4AK15

50

20

Switching Time t (ns)

10

5

0.2 0.5 1.0
Drain Current I

t

r

D

5

(A)

•

•

10

VGS = 10 V VDD = 30 V
PW = 2µs, duty < 1 %

t

d (on)

2

20

8

5 V

4

Reverse Drain Current I

0 0.4 1.2

0.8

Source to Drain Voltage V

VGS = 0, – 5 V

1.6

SD

2.0

(V)

7

Unit: mm

26.5 ± 0.3

1.82 2.54 1.4

1234

56

8910

7

10.0 ± 0.310.5 ± 0.5

2.5

0.55 ± 0.1

4.0 ± 0.2

1.5 ± 0.2

0.55

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

+0.1
–0.06

SP-10
—
—

2.9 g

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