Datasheet 4AC14 Datasheet (HIT)

Application

Low frequency power amplifier

Outline

SP-10

4AC14

Silicon NPN Triple Diffused

1

1, 10 Emitter
2, 4, 6, 8 Base
3, 5, 7, 9 Collector

10

3

2

1

6

7

4

I

D

8

I

D

5

I

D

9

I

D

10

4AC14

Absolute Maximum Ratings (for each device, Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Diode current I
Collector power dissipation PC*

CBO

CEO

EBO

C

C(peak)

D

1

1

P

*

(TC = 25°C) 28

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. 4 devices operation.

Electrical Characteristics (for each device, Ta = 25°C)

150 V
150 V
7V
5A
10 A
5A
4W

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown

V

(BR)CBO

150 — — V IC = 0.1 mA, IE = 0

voltage
Collector to emitter sustain

V

CEO(SUS)

150 — — V IC = 0.2 A, L = 20 mHz, RBE = ∞

voltage
Emitter to base breakdown

V

(BR)EBO

7——VI

= 50 mA, IC = 0

E

voltage
Collector cutoff current I

DC current transfer ratio h
Collector to emitter saturation

I

V

CBO

CEO

FE

CE(sat)

——10µAVCB = 120 V, IE = 0
— — 10 VCE = 120 V, RBE = ∞
1000 — 20000 VCE = 3 V, IC = 3 A*
— — 1.5 V IC = 3 A, IB = 6 mA*

voltage
Base to emitter saturation

V

BE(sat)

— — 2.0 V IC = 3 A, IB = 6 mA*

voltage
C to E diode forward current V

D

— — 3.5 V ID = 5 A

Note: 1. Pulse test.

1

1

1

2

Maximum Collector Dissipation Curve

6

4 device operation

3 device operation

4

2 device operation

1 device operation

2

4AC14

Maximum Collector Dissipation Curve

30

4 device operation

3 device operation

20

2 device operation

Collector power dissipation Pc (W)

0

50 100 150

Ambient temperature Ta (°C)

Note: Collector power dissipation of each devices

is identical.

Area of Safe Operation

100

iC

(max)

(peak)

DC Operation

(T

C

= 25°C)

PW = 10 ms

1 ms

10

(A)

C

IC

1.0

0.1

Collector current I

Ta = 25°C
1 shot pulse

0.01

0.3 1.0 3.0 10 30 100 300
Collector to emitter voltage VCE (V)

10

Collector power dissipation Pc (W)

1 device operation

0

50 100 150

Case temperature T

(°C)

C

Typical Output Characteristics

5

4.5

4

4

(A)

C

3

3.5
3

2.5

2

1.5

2

Collector current I

1

1 mA

IB = 0

0

12345

Collector to emitter voltage VCE (V)

T

= 25°C

C

3

4AC14

DC Current Transfer Ratio

vs. Collector Current

10,000

FE

1,000

Ta = 75°C

25°C

–25°C

100

DC current transfer ratio h

10

0.1 0.3
Collector current I

Base to Emitter Saturation Voltage

vs. Collector Current

10

(V)

(sat)
BE

3.0

Ta = –25°C

25°C

75°C

1.0

VCE = 3 V

1.0 3.0 10
(A)

C

Collector to Emitter Saturation Voltage

vs. Collector Current

(V)

10

(sat)
CE

3.0
Ta = –25°C

1.0

25°C

75°C

0.3

lC = 500 l

0.1

Collector to emitter saturation voltage V

0.1 0.3 1.0 3.0 10
Collector current I

C

(A)

Typical Transfer Characteristics

5

4

(A)

C

Ta = –25°C

25°C

75°C

3

2

B

0.3

0.1

Base to emitter saturation voltage V

0.1 0.3 1.0 3.0 10
Collector current IC (A)

lC = 500 l

Collector current I

1

VCE = 3 V

B

0

0.4 0.8 1.2 1.6 2.0

Base to emitter voltage V

BE

(V)

4

4AC14

Transient Thermal Resistance

10

(°C/W)

j-c

1.0

0.1

Thermal resistance θ

0.02

0.01 0.1 1.0 10 (s)

0.01 0.1 1.0 10 (ms)

10 ms to 10 s

10 µs to 10 ms

TC = 25°C

Time t

26.5 ± 0.3

Typical Characteristics of

Emitter to Collector Diode

5

4

(A)

D

3

2

Diode current I

1

TC = 25°C

0

Emitter to collector diode forward voltage V

0.4 0.8 1.2 1.6 2.0

ECF

4.0 ± 0.2

(V)

Unit: mm

1

1.82 2.54 1.4

Pin No.

1234

1E2B3C4B5C6B7C8B9C10

56

Electrode
Note: B:

C:
E:

Base
Collector
Emitter

1.2 0.55

8910

7

10

2.5

10.0 ± 0.310.5 ± 0.5

1.5 ± 0.2

0.55 ± 0.1

E

5

Unit: mm

26.5 ± 0.3

1.82 2.54 1.4

1234

56

8910

7

10.0 ± 0.310.5 ± 0.5

2.5

0.55 ± 0.1

4.0 ± 0.2

1.5 ± 0.2

0.55

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

+0.1
–0.06

SP-10
—
—

2.9 g

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