Datasheet 40HFR80, 41HFR10, 40HFR140 Specification

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DO-5 (DO-203AB)

Standard Recovery Diodes,

PRIMARY CHARACTERISTICS

I

F(AV)

Package DO-5 (DO-203AB)

Circuit configuration Single

(Stud Version), 40 A

FEATURES

• High surge current capability

• Stud cathode and stud anode version

• Leaded version available

• Types up to 1600 V V

• Designed and qualified for multiple level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Battery charges

40 A

• Converters

• Power supplies

• Machine tool controls

•Welding

VS-40HF(R) Series

Vishay Semiconductors

RRM

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

T

J

T

C

50 Hz 570 570

60 Hz 595 595

50 Hz 1600 1600

60 Hz 1450 1450

Range 100 to 1200 1400 to 1600 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE

V

TYPE NUMBER

VS-40HF(R)

VOLTAGE

CODE

10 100 200

20 200 300

40 400 500

60 600 700

80 800 900

100 1000 1100

120 1200 1300

140 1400 1500

160 1600 1700

RRM

PEAK REVERSE VOLTAGE

40HF(R)

10 TO 120 140/160

40 40 A

140 110 °C

62 62 A

-65 to 190 -65 to 160 °C

V

, MAXIMUM NON-REPETITIVE

RSM

V

PEAK REVERSE VOLTAGE

V

UNITS

A2s

I

MAXIMUM

RRM

AT T

= TJ MAXIMUM

J

A

mA

9

4.5

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current 
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A2s

Value of threshold voltage
(up to 1200 V)

Value of threshold voltage
(for 1400 V/1600 V)

Value of forward slope resistance
(up to 1200 V)

Value of forward slope resistance
(for 1400 V/1600 V)

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

V

F(TO)

V

F(TO)

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 595

t = 10 ms

t = 8.3 ms 500

t = 10 ms

t = 8.3 ms 1450

t = 10 ms

t = 8.3 ms 1050

No voltage 
reapplied

100 % V
reapplied

RRM

No voltage 
reapplied

100 % V
reapplied

RRM



Sinusoidal half wave,
initial T



TJ = TJ maximum

r

f

TJ = TJ maximum

r

f

Ipk = 125 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.30 1.50 V

FM

Vishay Semiconductors

= TJ maximum

J

VS-40HF(R) Series

40HF(R)

10 TO 120 140/160

40 40 A

140 110 °C

62 A

570

480

1600

1150

0.65

0.76

4.29

3.8

UNITS

A

A2s

V

m

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating and
storage temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Maximum allowable mounting
torque (+0 %, -10 %)

T

, T

J

Stg

R

thJC

R

thCS

DC operation 0.95

Mounting surface, smooth, flat and greased 0.25

Not lubricated thread, tighting on nut

Lubricated thread, tighting on nut

Not lubricated thread, tighting on hexagon

Lubricated thread, tighting on hexagon

(1)

(1)

(2)

(2)

Approximate weight

Case style See dimensions - link at the end of datasheet DO-5 (DO-203AB)

Notes

(1)

Recommended for pass-through holes

(2)

Recommended for holed threaded heatsinks

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.14 0.10

120° 0.16 0.17

90° 0.21 0.22

T

J

60° 0.30 0.31

30° 0.50 0.50

Note

• The table above shows the increment of thermal resistance R

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when devices operate at different conduction angles than DC

thJC

2

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40HF(R)

10 to 120 140 to 160

-65 to 190 -65 to 160 °C

3.4 (30)

2.3 (20)

4.2 (37)

3.2 (28)

17 g

0.6 oz.

= TJ maximum K/W

Document Number: 93513

UNITS

K/W

N · m

(lbf · in)

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Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

130

140

150

160

170

180

190

0 5 10 15 20 25 30 35 40 45

30 °

60 °

90 °

120 °

180 °

Conduction Angle

40HF(R) Series (100 V to 1200 V)

Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

120

130

140

150

160

170

180

190

0 10 20 30 40 50 60 70

DC

30 °

60 °

90 °

120 °

180 °

Conduction Period

40HF(R) Series (100 V to 1200 V)

Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

100

110

120

130

140

150

160

0 5 10 15 20 25 30 35 40 45

30 °

60 °

90 °

120 °

180 °

Conduction Angle

40HF(R) Series (1400 V, 1600 V)

Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

80

90

100

110

120

130

140

150

160

0 10 20 30 40 50 60 70

DC

30°

60 °

90°

120 °

180 °

Conduction Period

40HF(R) Series (1400 V, 1600 V)

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

40 80 120 160 200

10 K/W

RthSA = 1 K/W - Delta R

1.5 K/W

2 K/W

3 K/W

5 K/W

7 K/W

0

10

20

30

40

50

60

0 5 10 15 20 25 30 35 40

RMS Limit

Conduction Angle

180 °
120 °

90°
60°
30°

40HF(R) Series
(100 V to 1200 V)
Tj = 190 °C

VS-40HF(R) Series

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

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Fig. 5 - Forward Power Loss Characteristics

3

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Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

25 50 75 100 125 150 175 200

1.5 K/W

2 K/W

3 K/W

5 K/W

10 K/W

7 K/W

R

thSA

= 1 K/W - Delta R

0

5

10

15

20

25

30

35

40

45

50

0 10 20 30 40

RMS Limit

Conduction Angle

180 °
120 °

90°
60°
30°

40HF(R) Series
(1400 V, 1600 V)
T

j = 160 °C

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

Maximum Allowable Ambient Temperature (°C)

40 80 120 160

10 K/W

R

thSA

= 1 K/W - Delta R

1.5 K/W

2 K/W

3 K/W

5 K/W

7 K/W

0

10

20

30

40

50

60

70

0 10 20 30 40 50 60 70

DC
180 °
120 °

90°
60°
30°

RMS Limit

Conduction Period

40HF(R) Series
(1400 V, 1600 V)
Tj = 160 °C

VS-40HF(R) Series

Vishay Semiconductors

60

180 °
120 °

50

40

RMS Limit

30

20

10

0

0 10 20 30 40 50 60 70

Maximum Average Forward Power Loss (W)

DC

90°
60°
30°

Conduction Period

40HF(R) Series
(100 V to 1200 V)
Tj = 190 °C

Average Forward Current (A)

Fig. 6 - Forward Power Loss Characteristics

RthSA = 1 K/W - Delta R

1.5 K/W

2 K/W

3 K/W

5 K/W

7 K/W

10 K/W

40 80 120 160 200

Maximum Allowable Ambient Temperature (°C)

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Fig. 7 - Forward Power Loss Characteristics

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Fig. 8 - Forward Power Loss Characteristics

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Pulse Train Duration (s)

Peak Half Sine Wave Forward Current (A)

100

150

200

250

300

350

400

450

500

550

600

0.01 0.1 1

Maximum Non Repetitive Surge Current

40HF(R) Series

Initial Tj = Tj Max.

No Voltage Reapplied

Rated V

rrm

Reapplied

Versus Pulse Train Duration.

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

1

10

100

1000

0 0.5 1 1.5 2 2.5 3 3.5 4

TJ = 25 °C

TJ = TJ Max.

40HF (R) Series

VS-40HF(R) Series

Vishay Semiconductors

550

500

450

400

350

300

250

200

150

100

1 10 100

Peak Half Sine Wave Forward Current (A)

At Any Rated Load Condition And With

Rated V

40HF(R) Series

Applied Following Surge.

rrm

Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Number Of Equal Amplitude
Half Cycle Current Pulses (N)

Fig. 9 - Maximum Non-Repetitive Surge Current

1000

100

TJ = 25 °C

10

Instantaneous Forward Current (A)

1

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

TJ = TJ Max.

40HF(R) Series
up to 1200 V

Instantaneous Forward Voltage (V)

Fig. 11 - Forward Voltage Drop Characteristics

(Up To 1200 V)

Fig. 10 - Maximum Non-Repetitive Surge Current

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Fig. 12 - Forward Voltage Drop Characteristics

(For 1400 V/1600 V)

1

Steady State Value
(DC Operation)

0.1

40HF(R) .. Series

0.01

Transient Thermal Impedance (K/W)

-

0.0001 0.001 0.01 0.1 1 10

thJC

Z

Fig. 13 - Thermal Impedance Z

Square Wave Pulse Duration (s)

thJC

Characteristics

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2 - 40 = standard device

41 = not isolated lead

42 = isolated lead with silicone sleeve

(red = reverse polarity)

(blue = normal polarity)

3 - HF = standard diode

4 - None = stud normal polarity (cathode to stud)

R = stud reverse polarity (anode to stud)

5 - Voltage code x 10 = V

RRM

(see Voltage Ratings table)

6 - None = stud base DO-5 (DO-203AB) 1/4" 28UNF-2A

M = stud base DO-5 (DO-203AB) M6 x 1

Device code

5 61 32 4

40VS- HF R 160 M

1 -Vishay Semiconductors product

ORDERING INFORMATION TABLE

VS-40HF(R) Series

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95344

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DO-203AB (DO-5) for 40HF(R) and 41HF(R) Series

DIMENSIONS FOR 40HF(R) SERIES in millimeters (inches)

Ø 14.6 (0.57)

6.1/7

(0.24/0.27)

4 (0.16)

4 (0.16) MIN.

25.4 (1) MAX.

10.8 (0.42)

11.4 (0.45)

Outline Dimensions

Vishay Semiconductors

11.1 ± 0.4

(0.44 ± 0.02)

1.20 (0.04)

1/4" 28UNF-2A

for metric devices: M6 x 1

17.40 (0.68)

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Outline Dimensions

11 (0.43) MAX.

Ø 6.3 (0.25) MAX.

118.5 (4.67)
MAX.

107 (4.21)

MAX.

Vishay Semiconductors

DO-203AB (DO-5) for 40HF(R)

and 41HF(R) Series

DIMENSIONS FOR 41HF(R) SERIES in millimeters (inches)

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